Patents

Title
29

 

Seongjae Cho and Eunseon Yu, "Fabrication Method of Semiconductor Device Having SiGe Shell Channel and Semiconductor Device Fabricated by the Same,"

● Korean patent filed, 10-2019-0133195, Oct. 24, 2019. 

● United States patent filed, 16/698,927, Nov. 27, 2019.

28

Seongjae Cho, "Feedback 1T DRAM Device Having Localized Partial Insulating Layers,"

● Korean patent filed, 10-2019-0105435, Aug. 27, 2019.

● United States patent filed, 16/726,506, Dec. 24, 2019.

27

Jin-Hong Park, Keun Heo, Seongjae Cho, and Sungjoo Lee, "Synapse device and method of fabricating thereof,"

● Korean patent filed, 10-2019-0055291, May 10, 2019.

26

Seongjae Cho and Yung Hun Jung, "Photodiode Having Semi-Cylindrical Light Absoprtion Layer and Fabricating Method of the Same,"

● Korean patent filed, 10-2019-0007104, Jan. 18, 2019.

25

Seongjae Cho and Jae Yoon Lee, "Resistive memory device and method of fabricating the same,"

● Korean patent filed, 10-2018-0158703, Dec. 10, 2018.

24

Seongjae Cho, Eunseon Yu, and Jae Yoon Lee, "One-Transistor DRAM Cell Device Having Quantum Well Structure,"

● Korean patent filed, 10-2018-0127746, Oct. 24, 2018.

● Korean patent registered, 10-2059896, Dec. 20, 2019.

● United States patent filed, 16/660,203, Oct. 22, 2019.  

23

Seongjae Cho and Eunseon Yu, "Intelligent Semiconductor Device Having SiGe Quantum Well,"

● Korean patent filed, 10-2018-0108761, Sep. 12, 2018.

Korean patent registered, 10-2051308, Nov. 27, 2019.

● United States patent filed, 16/451,639, Jun. 25, 2019.

22

Seongjae Cho, Jin Hong Park, Keun Heo, and Jae Yoon Lee, "Multi-Level CMOS Random-Access Memory Having 2-Transistor 1-Capacitor Structure and Fabrication Method Thereof,"

● Korean patent filed, 10-2018-0068304, Jun. 14. 2018.

21

Seongjae Cho and Hyungsoon Shin, "One-Transistor DRAM Cell Device Based on Polycrystalline Silicon with FinFET Structure and Fabrication Method Thereof,"

● Korean patent filed, 10-2018-0024449, Feb. 28, 2018.

Korean patent registered, 10-2051306, Nov. 27, 2019.

● United States patent filed, 16/127,442, Sep. 11, 2018.

20

Seongjae Cho and Hyungsoon Shin, "One-Transistor DRAM Cell Device Based on Polycrystalline Silicon and Fabrication Method Thereof,"

● Korean patent filed, 10-2018-0019936, Feb. 20, 2018.

Korean patent registered, 10-2051304, Nov. 27, 2019.

19

Seongjae Cho and Yongbeom Cho, "Synaptic Semiconductor Device and Neural Networks Using the Same,"

● Korean patent filed, 10-2017-0152803, Nov. 16, 2017.

Korean patent registered, 10-1958769, Mar. 11, 2019.

● United States patent filed, 15/892,658, Feb. 9, 2018.

18

Byung-Gook Park and Seongjae Cho, "Integrated Circuit Emulating Neural System with Neuron Circuit and Synapse Device Array and Fabrication Method Thereof,"

● Korean patent filed, 10-2017-0062097, May 19, 2017.

● United States patent filed, 15/895,255, Feb. 13, 2018.

17

Seongjae Cho, So Youn Woo, Joo Won Park, and Kyung Ha Ryu, "Insulin detection sensor based on nanowire field-effect transistor,"

● Korean patent filed, 10-2017-0037482, Mar. 24, 2017.

16

Seongjae Cho and Hoon Heo, "Semiconductor memory device and fabrication method thereof,"

● Korean patent filed, 10-2017-0023568, Feb. 22, 2017.

Korean patent registered, 10-1958767, Mar. 11, 2019.

● United States patent filed, 15/696,217, Sep. 6, 2017.

United States patent registered, US 10,090,389, Oct. 2, 2018.

15

Seongjae Cho, Junsoo Lee, and Yongbeom Cho, "Junctionless tunneling field-effect transistor havnig dual gates,"

● Korean patent filed, 10-2016-0145634, Nov. 3, 2016.

Korean patent registered, 10-1902843, Sep. 20, 2018.

14

Seongjae Cho and Eunseon Yu, "SiGe p-channel tri-gate transistor based on bulk silicon and fabrication method thereof,"

● Korean patent filed, 10-2016-0102082, Aug. 11, 2016.

Korean patent resistered, 10-1846991, Apr. 3, 2018.

● United States patent filed, 15/372,695, Dec. 8, 2016.

● United States patent filed (divided), 16/411,381, May 14, 2019.

13

Seongjae Cho and Mina Yun, "Transistor having germanium channel on silicon nanowire and fabrication method thereof,"

● Korean patent filed, 10-2015-0156652, Nov. 9, 2015.

Korean patent registered, 10-1774824, Aug. 30, 2017.

● United States patent filed, 15/345,781, Nov. 8, 2016.

United States patent registered, US 9,935,189 B2, Apr. 3, 2018.

12

Seongjae Cho and Youngmin Kim, "Junctionless field-effect transistor having ultra-thin low-crystalline silicon channel and fabrication method thereof,"

● Korean patent filed, 10-2015-0123246, Aug. 31, 2015.

Korean patent registered, 10-1781175, Sep. 18, 2017.

● United States patent filed, 14/969,172, Dec. 15, 2015.

United States patent registered, US 10,068,971 B2, Sep. 4, 2018.

11

Byung-Gook Park, Seongjae Cho, and Sungjun Kim, "Resistive random access memory device embedding tunnel insulating layer and memory array using the same and fabrication method thereof,"

● Korean patent filed, 10-2015-0102690, Jul. 20, 2015.

Korean patent registered, 10-1671860, Oct. 27, 2016.

● United States patent filed, 15/182,640, Jun. 15, 2016.

United States patent registered, US 9,799,706 B2, Oct. 24, 2017.

10

Byung-Gook Park, Seongjae Cho, and Sunghun Jung, "Resistive random access memory device having a nano-scale tip, memory array using the same and fabrication method thereof,"

● Korean patent filed, 10-2014-0138665, Oct. 14, 2014. 

Korean patent registered, 10-1623854, May 18, 2016.

● United States patent filed, 14/797,576, Jul. 13, 2015.

United States patent registered, US 9,768,381 B2, Sep. 19, 2017.

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