Current Members

Name Md. Hasan Raza Ansari
Degree Postdoctoral Researcher, Ph.D. from Indian Institute of Technology, Indore, India (2019)
Research Area Capacitorless DRAM, semiconductor device physics, and emerging semiconductor memory devices
Name Dae Hwan Kim
Degree Research Undergraduate
Research Area Semiconductor device physics and advanced logic devices
Name Chang Hoon Kim
Degree Research Undergraduate
Research Area Advanced memory technology and process integration
Name Hyeonpyo Lee
Degree Research Undergraduate
Research Area High-speed low-power advanced logic device technologies


Alumni

Name Jisun Lee
Research Area Research Undergraduate: Mar. 2014 - Aug. 2014
Advanced logic devices including tunneling field-effect transistor
Current AffiliationB.S. in Feb. 2016 and currently with Samsung Display
Name Hee Kyung Lim
Research Area Research Undergraduate: Nov. 2015 - Jan. 2016
MOSCAP and MOSFET analyses for advanced logic devices
Current AffiliationB.S. in Feb. 2016 and currently with Memory Division at Samsung Electronics
Name Seongmin Lee
Research Area Optimal design of advanced logic devices with an emphasis on GaN
M. S. Thesis: Optical Design of GaN-on-Si Junctionless Fin-Shaped Channel Field-Effect Transistor (JL FinFET) for Low-Power Application
Current AffiliationM.S. in Feb. 2016 and currently with AP Systems
Name Jeongmin Lee
Research Area Low-temperature group-IV alloy material processing and characterization
Current AffiliationPh.D. coursework completed in Aug. 2016
Name Youngmin Kim
Research Area 3D flash memory, embdded DRAM, and ReRAM technologies
M.S. Thesis: A Highly Si-Compatible GeO Resistive Random-Access Memory (RRAM): Fabrication, Characterization, and Compact Modeling
Current AffiliationM.S. in Feb. 2018 and currently with ASM Korea R&D Center
Name Junsoo Lee
Research Area Junctionless FET, tunneling FET, ultra-thin poly-Si FET, atomic layer deposition (ALD)
M.S. Thesis: A Junctionless Nano-Transisor with an Ultra-Thin Poly-Si Channel on Insulator: Device Simulation and Process Integration
Current AffiliationM.S. in Feb. 2018 and currently with ASM Korea CS Department
Name Eunseon Yu
Research Area Nanowire MOSFET; SiGe technology; material characterization
M.S. Thesis: Design and Characterization of Ultra-Thin SiGe Shell-Channel p-type Nanowire FET with Enhanced Quantum Confinement
Current AffiliationM.S. in Aug. 2018; Researcher Sep. 2018 - Aug. 2019; Ph.D. Candidate at Purdue University
Name Yongbeom Cho
Research Area First-principle simulation of electronic structures of novel materials; synaptic devices
M.S. Thesis: Synaptic Transistor for Hardware-based Spiking Neural Network
Current AffiliationM.S. in Feb. 2019 and currently with the Memory Division at Samsung Electronics
Name Jae Yoon Lee
Research Area Device and array design of emerging memory devices; embedded DRAM and fusion memory; device and circuit co-optimization design and modeling
M.S. Thesis: Design and Characterization of 2-Terminal Vertical SiGe Dynamic Random-Access Memory (DRAM)
Current AffiliationM.S. in Feb. 2020
Name Yung Hun Jung
Research Area First-principle simulation; DC and RF design of advanced logic device; high-speed and low-power optical materials and devices
M.S. Thesis: Optimal Design of SiGe Heterojunction Tunneling Field-Effect Transistor and High-Frequency Modeling
Current AffiliationM.S. in Feb. 2020