Current Members

Name Kannan Udaya Mohanan
Degree Postdoctoral Researcher, Ph.D. from Indian Institute of Technology, Hyderabad, India (2019)
Research Area Emerging memory devices; ReRAM devices for neuromorphic computing


Alumni

Name Jisun Lee
Research Area Research Undergraduate: Mar. 2014 - Aug. 2014
Advanced logic devices including tunneling field-effect transistor
Current AffiliationB.S. in Feb. 2016. Currently with Samsung Display
Name Hee Kyung Lim
Research Area Research Undergraduate: Nov. 2015 - Jan. 2016
MOSCAP and MOSFET analyses for advanced logic devices
Current AffiliationB.S. in Feb. 2016. Currently with Memory Division at Samsung Electronics
Name Seongmin Lee
Research Area Optimal design of advanced logic devices with an emphasis on GaN
M. S. Thesis: Optical Design of GaN-on-Si Junctionless Fin-Shaped Channel Field-Effect Transistor (JL FinFET) for Low-Power Application
Current AffiliationM.S. in Feb. 2016. Currently with AP Systems
Name Jeongmin Lee
Research Area Low-temperature group-IV alloy material processing and characterization
Current AffiliationPh.D. coursework completed in Aug. 2016
Name Youngmin Kim
Research Area 3D flash memory, embdded DRAM, and RRAM technologies
M.S. Thesis: A Highly Si-Compatible GeO Resistive Random-Access Memory (RRAM): Fabrication, Characterization, and Compact Modeling
Current AffiliationM.S. in Feb. 2018. Currently with ASM Korea R&D Center
Name Junsoo Lee
Research Area Junctionless FET, tunneling FET, ultra-thin poly-Si FET, atomic layer deposition (ALD)
M.S. Thesis: A Junctionless Nano-Transisor with an Ultra-Thin Poly-Si Channel on Insulator: Device Simulation and Process Integration
Current AffiliationM.S. in Feb. 2018. Currently with ASM Korea CS Department
Name Eunseon Yu
Research Area Nanowire MOSFET; SiGe technology; material characterization
M.S. Thesis: Design and Characterization of Ultra-Thin SiGe Shell-Channel p-type Nanowire FET with Enhanced Quantum Confinement
Current AffiliationM.S. in Aug. 2018; Researcher Sep. 2018 - Aug. 2019; Ph.D. Candidate at Purdue University
Name Yongbeom Cho
Research Area First-principle simulation of electronic structures of novel materials; synaptic devices for neuromorphic application
M.S. Thesis: Synaptic Transistor for Hardware-based Spiking Neural Network
Current AffiliationM.S. in Feb. 2019. Currently with the Memory Division at Samsung Electronics
Name Jae Yoon Lee
Research Area Device and array design of emerging memory devices; embedded DRAM and fusion memory; device and circuit co-optimization design and modeling
M.S. Thesis: Design and Characterization of 2-Terminal Vertical SiGe Dynamic Random-Access Memory (DRAM)
Current AffiliationM.S. in Feb. 2020. Currently with the Memory Division at Samsung Electronics
Name Yung Hun Jung
Research Area First-principle simulation; DC and RF design of advanced logic device; high-speed and low-power optical materials and devices
M.S. Thesis: Optimal Design of SiGe Heterojunction Tunneling Field-Effect Transistor and High-Frequency Modeling
Current AffiliationM.S. in Feb. 2020
Name Hyeonpyo Lee
Research Area Research Undergraduate: Dec. 2019 - Nov. 2020
Si processing integration; TCAD device simulation; gated-diode tunneling device; NAND flash memory fabrication and characterization
Current AffiliationB.S. in Feb. 2021. Currently with the Memory Division at Samsung Electronics
Name Md. Hasan Raza Ansari
Research Area Ph.D. from IIT Indore in 2019; Postdoctoral Researcher at NEOL, Dec. 2019 - Nov. 2021
Capacitorless DRAM, semiconductor device physics, and emerging semiconductor memory devices
Current AffiliationPostdoctoral Researcher at King Abdullah University of Science and Technology (KAUST)
Name Seungjo Baek
Research Area Affiliated Researcher: Apr. 2021 - Jan. 2022
Novel DRAM cell design; BSIM parameter modeling; circuit design and simulation
Current AffiliationNovachips