| 31 |
Seongjae Cho, In Man Kang, and Kyung Rok Kim |
Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs |
IEICE Electronics Express |
7 |
19 |
1499-1503 |
Oct. 2010 |
| 30 |
Seongjae Cho, Jung Hoon Lee, Shinichi O'uchi, Kazuhiko Endo, Meishoku Masahara, and Byung-Gook Park |
Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL) |
Solid-State Electronics |
54 |
10 |
1060-1065 |
Oct. 2010 |
| 29 |
Doo-Hyun Kim, Seongjae Cho, Dong Hua Li, Jang-Gn Yun, Jung Hoon Lee, Gil Sung Lee, Yoon Kim, Won Bo Shim, Se Hwan Park, Wandong Kim, Hyungcheol Shin, and Byung-Gook Park |
Program/Erase Model of Nitride-Based NAND-Type Charge Trap Flash Memories |
Japanese Journal of Applied Physics |
49 |
8 |
843011-843014 |
Aug. 2010 |
| 28 |
Seongjae Cho, Jung-Dal Choi, Byung-Gook Park, and Il Hwan Cho |
Effects of channel doping concentration and fin dimension variation on self-boosting of channel potential in NAND-type SONOS flash memory array based on bulk-FinFETs |
Current Applied Physics |
10 |
4 |
1096-1102 |
Jul. 2010 |
| 27 |
Seongjae Cho, Jung Hoon Lee, Yoon Kim, Jang Gn Yun, Hyungcheol Shin, and Byung-Gook Park |
Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices |
IEICE Transactions on Electronics |
E93-C |
5 |
596-601 |
May 2010 |
| 26 |
Dong Seup Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jung Han Lee, Seongjae Cho, and Byung-Gook Park |
Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer |
IEICE Transactions on Electronics |
E93-C |
5 |
540-545 |
May 2010 |
| 25 |
Seongjae Cho, Hee-Sauk Jhon, Jung Hoon Lee, Se Hwan Park, Hyungcheol Shin, and Byung-Gook Park |
Device and Circuit Co-Design Strategy for Application to Low Noise Amplifier (LNA) Based on Silicon Nanowire MOSFETs |
Japanese Journal of Applied Physics |
49 |
4 |
04DN03-1-04DN03-7 |
Apr. 2010 |
| 24 |
Yoon Kim, Jang-Gn Yun, Seongjae Cho, and Byung-Gook Park |
Highly Integrated 3-dimensional NOR Flash Array with Vertical 4-bit SONOS (V4SONOS) |
Journal of Institute of Electronics Engineers of Korea: Semiconductor Devices |
47 |
2 |
102-107 |
Feb. 2010 |
| 23 |
Seongjae Cho, Shinichi O'uchi, Kazuhiko Endo, Takashi Matsukawa, Kunihiro Sakamoto, Yongxun Liu, Byung-Gook Park, and Meishoku Masahara |
Minimization of Gate-Induced Drain Leakage by Controlling Gate Underlap Length for Low-Standby-Power Operation of 20-nm-Level Four-Terminal Silicon-on-Insulator Fin-Shaped Field Effect Transistor |
Japanese Journal of Applied Physics |
49 |
2 |
024203-1-024203-5 |
Feb. 2010 |
| 22 |
Yoon Kim, Il Han Park, Seongjae Cho, Jang-Gn Tun, Jung Hoon Lee, Doo-Hyun Kim, Gil Sung Lee, Se-Hwan Park, Dong Hua Lee, Won Bo Shim, Wandong Kim, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park |
A Vertical 4-Bit SONOS Flash Memory and a Unique 3-D Vertical NOR Array Structure |
IEEE Transactions on Nanotechnology |
9 |
1 |
70-76 |
Jan. 2010 |
| 21 |
Seongjae Cho, Won Bo Shim, Il Han Park, Yoon Kim, and Byung-Gook Park |
Highly Scalable 3-D NAND-NOR Hybrid Dual-Bit per Cell Flash Memory Devices with Additional Cut-off Gate |
Journal of the Korean Physical Society |
56 |
1 |
137-141 |
Jan. 2010 |
| 20 |
Gil Sung Lee, Seongjae Cho, Jang-Gn Yun, Dong Hwa Li, Doo-Hyung Kim, Yoon Kim, Se Hwan Park, Won Bo Shim, Wan Dong Kim, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park |
Cone-Type SONOS Flash Memory |
IEEE Electron Device Letters |
30 |
12 |
1332-1334 |
Nov. 2009 |
| 19 |
Seongjae Cho, Il Han Park, Yoon Kim, Se Hwan Park, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park |
A Gated Twin-Bit (GTB) Nonvolatile Memory Device and Its Fabrication Method |
IEEE Transactions on Nanotechnology |
8 |
5 |
595-602 |
Sep. 2009 |
| 18 |
Sang Hyuk Park, Sangwoo Kang, Seongjae Cho, Dong-Seup Lee, Jung Han Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jong Duk Lee, and Byung-Gook Park |
Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation |
IEICE Transactions on Electronics |
E92-C |
5 |
647-652 |
May 2009 |
| 17 |
Yoon Kim, Seongjae Cho, Gil Sung Lee, Il Han Park, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park |
3-Dimensional Terrace NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array |
IEICE Transactions on Electronics |
E92-C |
5 |
653-658 |
May 2009 |
| 16 |
Doo-Hyun Kim, Il Han Park, Seongjae Cho, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park |
Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory |
IEICE Transactions on Electronics |
E92-C |
5 |
659-664 |
May 2009 |
| 15 |
Seongjae Cho, Jung Hoon Lee, Gil Sung Lee, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park |
Design Consideration for Vertical Nonvolatile Memory Device Regarding Gate-Induced Barrier Lowering (GIBL) |
IEICE Transactions on Electronics |
E92-C |
5 |
620-626 |
May 2009 |
| 14 |
Byung-Gook Park, Jae Young Song, Jong Pil Kim, Hoon Jeong, Jung Hoon Lee, and Seongjae Cho |
Nanosculpture: Three-dimensional CMOS device structures for ULSI era |
Microelectronics Journal |
40 |
4-5 |
769-772 |
Apr.-May 2009 |
| 13 |
Jang-Gn Yun, Il Han Park, Seongjae Cho, Jung Hoon Lee, Doo-Hyun Kim, Gil Sung Lee, Yoon Kim, Jong Duk Lee, and Byung-Gook Park |
A 2-Bit Recessed Channel Nonvolatile Memory Device with a Lifted Charge-Trapping Node |
IEEE Transactions on Nanotechnology |
8 |
1 |
111-115 |
Jan. 2009 |
| 12 |
Seongjae Cho, Il Han Park, Jung Hoon Lee, Younghwan Son, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park |
Dependence of Program Efficiency on Channel Conditions Regarding NOR-Type Flash Memory Devices Fabricated on a Silicon-on-Insulator (SOI) Substrate |
Journal of the Korean Physical Society |
53 |
6 |
3422-3426 |
Dec. 2008 |
Gachon University