| 24 |
Yoon Kim, Jang-Gn Yun, Seongjae Cho, and Byung-Gook Park |
Highly Integrated 3-dimensional NOR Flash Array with Vertical 4-bit SONOS (V4SONOS) |
Journal of Institute of Electronics Engineers of Korea: Semiconductor Devices |
47 |
2 |
102-107 |
Feb. 2010 |
| 23 |
Seongjae Cho, Shinichi O'uchi, Kazuhiko Endo, Takashi Matsukawa, Kunihiro Sakamoto, Yongxun Liu, Byung-Gook Park, and Meishoku Masahara |
Minimization of Gate-Induced Drain Leakage by Controlling Gate Underlap Length for Low-Standby-Power Operation of 20-nm-Level Four-Terminal Silicon-on-Insulator Fin-Shaped Field Effect Transistor |
Japanese Journal of Applied Physics |
49 |
2 |
024203-1-024203-5 |
Feb. 2010 |
| 22 |
Yoon Kim, Il Han Park, Seongjae Cho, Jang-Gn Tun, Jung Hoon Lee, Doo-Hyun Kim, Gil Sung Lee, Se-Hwan Park, Dong Hua Lee, Won Bo Shim, Wandong Kim, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park |
A Vertical 4-Bit SONOS Flash Memory and a Unique 3-D Vertical NOR Array Structure |
IEEE Transactions on Nanotechnology |
9 |
1 |
70-76 |
Jan. 2010 |
| 21 |
Seongjae Cho, Won Bo Shim, Il Han Park, Yoon Kim, and Byung-Gook Park |
Highly Scalable 3-D NAND-NOR Hybrid Dual-Bit per Cell Flash Memory Devices with Additional Cut-off Gate |
Journal of the Korean Physical Society |
56 |
1 |
137-141 |
Jan. 2010 |
| 20 |
Gil Sung Lee, Seongjae Cho, Jang-Gn Yun, Dong Hwa Li, Doo-Hyung Kim, Yoon Kim, Se Hwan Park, Won Bo Shim, Wan Dong Kim, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park |
Cone-Type SONOS Flash Memory |
IEEE Electron Device Letters |
30 |
12 |
1332-1334 |
Nov. 2009 |
| 19 |
Seongjae Cho, Il Han Park, Yoon Kim, Se Hwan Park, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park |
A Gated Twin-Bit (GTB) Nonvolatile Memory Device and Its Fabrication Method |
IEEE Transactions on Nanotechnology |
8 |
5 |
595-602 |
Sep. 2009 |
| 18 |
Sang Hyuk Park, Sangwoo Kang, Seongjae Cho, Dong-Seup Lee, Jung Han Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jong Duk Lee, and Byung-Gook Park |
Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation |
IEICE Transactions on Electronics |
E92-C |
5 |
647-652 |
May 2009 |
| 17 |
Yoon Kim, Seongjae Cho, Gil Sung Lee, Il Han Park, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park |
3-Dimensional Terrace NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array |
IEICE Transactions on Electronics |
E92-C |
5 |
653-658 |
May 2009 |
| 16 |
Doo-Hyun Kim, Il Han Park, Seongjae Cho, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park |
Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory |
IEICE Transactions on Electronics |
E92-C |
5 |
659-664 |
May 2009 |
| 15 |
Seongjae Cho, Jung Hoon Lee, Gil Sung Lee, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park |
Design Consideration for Vertical Nonvolatile Memory Device Regarding Gate-Induced Barrier Lowering (GIBL) |
IEICE Transactions on Electronics |
E92-C |
5 |
620-626 |
May 2009 |
| 14 |
Byung-Gook Park, Jae Young Song, Jong Pil Kim, Hoon Jeong, Jung Hoon Lee, and Seongjae Cho |
Nanosculpture: Three-dimensional CMOS device structures for ULSI era |
Microelectronics Journal |
40 |
4-5 |
769-772 |
Apr.-May 2009 |
| 13 |
Jang-Gn Yun, Il Han Park, Seongjae Cho, Jung Hoon Lee, Doo-Hyun Kim, Gil Sung Lee, Yoon Kim, Jong Duk Lee, and Byung-Gook Park |
A 2-Bit Recessed Channel Nonvolatile Memory Device with a Lifted Charge-Trapping Node |
IEEE Transactions on Nanotechnology |
8 |
1 |
111-115 |
Jan. 2009 |
| 12 |
Seongjae Cho, Il Han Park, Jung Hoon Lee, Younghwan Son, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park |
Dependence of Program Efficiency on Channel Conditions Regarding NOR-Type Flash Memory Devices Fabricated on a Silicon-on-Insulator (SOI) Substrate |
Journal of the Korean Physical Society |
53 |
6 |
3422-3426 |
Dec. 2008 |
| 11 |
Jang-Gn Yun, Yoon Kim, Il Han Park, Jung Hoon Lee, Sangwoo Kang, Dong-Hua Lee, Seongjae Cho, Doo-Hyun Kim, Gil Sung Lee, Won-Bo Sim, Younghwan Son, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park |
Fabrication and characterization of fin SONOS flash memory with separated double-gate structure |
Solid-State Electronics |
52 |
10 |
1498-1504 |
Oct. 2008 |
| 10 |
Seongjae Cho, Il Han Park, Jung Hoon Lee, Jong Duk Lee, and Byung-Gook Park |
Evaluation and Resolution for Nonideal Characteristics of Complementary Metal-Oxide-Semiconductor Devices Fabricated on Silicon-on-Insulator |
Japanese Journal of Applied Physics |
47 |
6 |
4408-4412 |
Jun. 2008 |
| 9 |
Seongjae Cho, Il Han Park, Jung Hoon Lee, Jang-Gn Yun, Doo-Hyun Kim, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park |
Establishing Read Operation Bias Schemes for 3-D Pillar Structure Flash Memory Devices to Overcome Paired Cell Interference (PCI) |
IEICE Transactions on Electronics |
E91-C |
5 |
731-735 |
May 2008 |
| 8 |
Jang-Gn Yun, Il Han Park, Seongjae Cho, Jung Hoon Lee, Doo-Hyun Kim, Gil Sung Lee, Yoon Kim, Jong Duk Lee, and Byung-Gook Park |
Characterization of 2-Bit Recessed Channel Memory with Lifted-Charge Trapping Node (L-CTN) Scheme |
IEICE Transactions on Electronics |
E91-C |
5 |
742-746 |
May 2008 |
| 7 |
Jang-Gn Yun, Il Han Park, Seongjae Cho, Jung Hoon Lee, Doo-Hyun Kim, Gil Sung Lee, Yoon Kim, Jong Duk Lee, and Byung-Gook Park |
Formation of Si-Rich Silicon Nitride with Low Deposition Rate by Using LPCVD for Nanoscale Non-Volatile-Memory Application |
Journal of the Korean Physical Society |
51 |
96 |
S229-S233 |
Dec. 2007 |
| 6 |
Jong Pil Kim, Woo Young Choi, Jae Young Song, Seongjae Cho, Sang Wan Kim, Jong Duk Lee, and Byung-Gook Park |
Design and Simulation of Asymmetric MOSFETs |
IEICE Transactions on Electronics |
E90-C |
5 |
978-982 |
May 2007 |
| 5 |
Hochul Lee, Youngchang Yoon, Seongjae Cho, and Hyungcheol Shin |
Accurate extraction of the trap depth from RTS noise data by including poly depletion effect and surface potential variation in MOSFETs |
IEICE Transactions on Electronics |
E90-C |
5 |
968-971 |
May 2007 |
Gachon University