Journal Publications

Authors Title Journal Vol. No. Page Date
181 Hocheon Yoo, Keun Heo, Md. Hasan Raza Ansari, and Seongjae Cho Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications Nanomaterials 11 4 832-1-832-21 Mar. 2021
180 Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Kyungho Hong, Sungjun Kim, Seongjae Cho, Jong-Ho Lee, Byung-Gook Park Improvement of Resistive Switching Characteristics of Titanium Oxide Based Nano-Wedge RRAM through Nickel Silicidation IEEE Transactions on Electron Devices 68 1 438-442 Jan. 2021
179 Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Chae Soo Kim, Sungjun Kim, Seongjae Cho, and Byung-Gook Park Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation modelled by Monte Carlo Simulation IEEE Access 8 228720-228730 Dec. 2020
178 Md. Hasan Raza Ansari, Seongjae Cho, and Byung-Gook Park More physical understanding of current characteristics of tunneling field-effect transistor leveraged by gate positions and properties through dual-gate and gate-all-around structuring Applied Physics A 126 11 839-1-839-8 Oct. 2020
177 Eunjung Ko, Seon Haeng Lee, Md. Hasan Raza Ansari, Seung Wook Ryu, and Seongjae Cho Dependency of electrical performances and reliability of 28-nm logic transistor on gate oxide interface treatment methods Applied Physics Express 13 10 101003-1-101003-3 Sep. 2020
176 Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Sungjun Kim, Seongjae Cho, and Byung-Gook Park Multilevel Switching Characteristics of Si3N4-Based Nano-Wedge Resistive Switching Memory and Array Simulation for In-Memory Computing Application Electronics 9 8 1228-1-1228-8 Aug. 2020
175 Donguk Kim, Jun Tae Jang, Eunseon Yu, Jungyu Park, Jungi Min, Dong Myong Kim, Sung-Jin Choi, Hyun-Sun Mo, Seongjae Cho, Kaushik Roy, and Dae Hwan Kim Pd/IGZO/p+-Si Synaptic Device with Self-Graded Oxygen Concentrations for Highly Linear Weight Adjustability and Improved Energy Efficiency ACS Applied Electronic Materials 2 8 2390-2397 Aug. 2020
174 Seongjae Cho, Stanley S. Cheung, Yung Hun Jung, Sae-Kyoung Kang, Dal Ho Lee, and Byung-Gook Park Ge-on-Si Photodetector with Enhanced Optical Responsivity by Advanced Metallization Geometry Journal of Semiconductor Technology and Science 20 4 366-371 Aug. 2020
173 Eunseon Yu, Seongjae Cho, Kaushik Roy, and Byung-Gook Park A Quantum-Well Charge-Trap Synaptic Transistor with Highly Linear Weight Tunability IEEE Journal of the Electron Devices Society 8 834-840 Aug. 2020
172 Hyojong Cho, Ji-Ho Ryu, Chandreswar Mahata, Muhammad Ismail, Ying-Chen Chen, Yao-Feng Chang, Seongjae Cho, Alexey Mikhaylov, Jack Lee, Sungjun Kim Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures Journal of Physics D: Applied Physics 53 43 435102-1-435102-6 Aug. 2020
171 Ji-Ho Ryu, Boram Kim, Fayyaz Hussain, Muhammad Ismail, Chandreswar Mahata, Teresa Oh, Muhammad Imran, Kyung Kyu Min, Tae-Hyeon Kim, Byung-Do Yang, Seongjae Cho, Byung-Gook Park, Yoon Kim, and Sungjun Kim Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering IEEE Access 8 130678-130686 Jul. 2020
170 Tae-Hyeon Kim, Min-Hwi Kim, Suhyun Bang, Dong Keun Lee, Sungjun Kim, Seongjae Cho, and Byung-Gook Park Fabrication and Characterization of TiOx Memristor for Synaptic Device Application IEEE Transactions on Nanotechnology 19 475-480 Jul. 2020
169 Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, and Byung-Gook Park HfOx-based nano-wedge structured resistive switching memory device operating at sub-μA current for neuromorphic computing application Semiconductor Science and Technology 35 5 055002-1-055002-10 May 2020
168 Kyungho Hong, Kyung Kyu Min, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Yeon Joon Choi, Chae Soo Kim, Jae Yoon Lee, Sungjun Kim, Seongjae Cho, and Byung-Gook Park Investigation of the Thermal Recovery From Reset Breakdown of a SiNx-Based RRAM IEEE Transactions on Electron Devices 67 4 1600-1605 Apr. 2020
167 Md. Hasan Raza Ansari, Nupur Navlakha, Jae Yoon Lee, and Seongjae Cho Double-Gate Junctionless 1T DRAM With Physical Barriers for Retention Improvement IEEE Transactions on Electron Devices 67 4 1471-1479 Apr. 2020
166 Jun Tae Jang, Jungi Min, Donguk Kim, Jingyu Park, Sung-Jin Choi, Dong Myong Kim, Seongjae Cho, and Dae Hwan Kim A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence Solid-State Electronics 166 107764-1-107764-7 Apr. 2020
165 Dong Chang Han, Deok Jin Jang, Jae Yoon Lee, Seongjae Cho, and Il Hwan Cho Investigation of Modified 1T DRAM with Twin Gate Tunneling Field Effect Transistor for Improved Retention Characteristics Journal of Semiconductor Technology and Science 20 2 145-150 Apr. 2020
164 Yongjin Jeong, In Man Kang, Seongjae Cho, Jisun Park, and Hyungsoon Shin Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor Journal of Nanoscience and Nanotechnology 20 2 4920-4925 Feb. 2020
163 Hyeonjeong Kim, Songyi Yoo, In Man Kang, Seongjae Cho, Wookyung Sun, and Hyungsoon Shin Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM Micromachines 11 2 228-1-228-8 Feb. 2020
162 Seoyeon Go, Won Jae Lee, and Seongjae Cho A More Accurate Analytical DC Compact Modeling of Tunneling Field-Effect Transistor for SPICE Simulation Journal of Semiconductor Technology and Science 19 6 551-560 Dec. 2019
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