Journal Publications

Authors Title Journal Vol. No. Page Date
140 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Ying-Chen Chen, Yao-Feng Chang, Kyung-Chang Ryoo, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate Small 14 19 1704062-1-1704062-8 May 2018
139 Eunseon Yu, Youngmin Kim, Junsoo Lee, Yongbeom Cho, Won Jae Lee, and Seongjae Cho Processing and Characterization of Ultra-thin Poly-crystalline Silicon for Memory and Logic Applications Journal of Semiconductor Technology and Science 18 2 172-179 Apr. 2018
138 Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes IEEE Transactions on Electron Devices 65 4 1290-1297 Apr. 2018
137 Min-Hwi Kim, Sungjun Kim, Kyung-Chang Ryoo, Seongjae Cho, and Byung-Gook Park Circuit-level simulation of resistive-switching random-access memory cross-point array based on a highly reliable compact model Journal of Computational Electronics 17 1 273-278 Mar. 2018
136 Youngmin Kim, Min-Woo Kwon, Kyung-Chang Ryoo, Seongjae Cho, and Byung-Gook Park Design and Electrical Characterization of 2-T Thyristor RAM With Low Power Consumption IEEE Electron Device Letters 39 3 355-358 Mar. 2018
135 Tae-Hyeon Kim, Sungjun Kim, Hyungjin Kim, Min-Hwi Kim, Suhyun Bang, Seongjae Cho, and Byung-Gook Park Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+ Si memory device Solid-State Electronics 140 51-54 Feb. 2018
134 Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho SiGe Heterojunction FinFET Towards Tera-Hertz Applications Journal of the Korean Physical Society 72 4 527-532 Feb. 2018
133 Yunghun Jung, Yongbeom Cho, In Man Kang, and Seongjae Cho Analyses on Device Performances and Short-Channel Effects of Tunneling Field-Effect Transistor Having SiGe Source Junction Journal of The Institute of Electronics and Information Engineers 54 12 33-41 Dec. 2017
132 Min Su Cho, Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Chul-Ho Won, Jeong-Gil Kim, Junsoo Lee, Seongjae Cho, Jung-Hee Lee, and In Man Kang Electrical Performances of InN/GaN Tunneling Field-Effect Transistor Journal of Nanoscience and Nanotechnology 17 11 8355-8359 Nov. 2017
131 Bo Gyeong Kim, Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Min Su Cho, Jung-Hee Lee, Seongjae Cho, and In Man Kang Electrical Characteristics of Tunneling FIeld-Effect Transistors using Vertical Tunneling Operation Based on AlGaSb/InGaAs Journal of Electrical Engineering and Technology 12 6 2324-2332 Nov. 2017
130 Eunseon Yu, Seung Wook Ryu, Henry H. Radamson, and Seongjae Cho Structural and Optical Characteristics of Epitaxially Grown SiGe on Si for Electronic and Photonic Device Applications Journal of Nanoelectronics and Optoelectronics 12 10 1129-1133 Oct. 2017
129 Yongbeom Cho, Seongjae Cho, Byung-Gook Park, and James S. Harris, Jr. First-principle Study for More Accurate Optical and Electrical Characterization of Ge1-xSnx Alloy for Si and Group-IV Device Applications Journal of Semiconductor Technology and Science 17 5 675-684 Oct. 2017
128 Seunghyun Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Seongjae Cho, and Byung-Gook Park Investigation of Retention Characteristics Caused by Charge Loss for Charge Trap NAND Flash Memory Journal of Semiconductor Technology and Science 17 5 584-590 Oct. 2017
127 Tae-Hyeon Kim, Sungjun Kim, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park Design and Analysis for 3D Vertical Resistive Random Access Memory Structures with Silicon Bottom Electrodes Journal of Nanoscience and Nanotechnology 17 10 7160-7163 Oct. 2017
126 Eunseon Yu, Seongjae Cho, and Byung-Gook Park An accurate simulation study on capacitance-voltage characteristics of metal-oxide-semiconductor field-effect transistors in novel structures Physica B: Condensed Matter 521 305-311 Sep. 2017
125 Yongbeom Cho, Eunseon Yu, and Seongjae Cho Design of a High-Hole-Mobility Ge Transistor for Si-Driven Heterojunction Integrated Circuits IDEC Journal of Integrated Circuits and Systems 3 3 13-19 Jul. 2017
124 Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory Solid-State Electronics 132 109-114 Jun. 2017
123 Seunghyun Kim, Dae Woong Kwon, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Hyungmin Kim, Young Goan Kim, Seongjae Cho, and Byung-Gook Park Characterization of the Vertical Position of the Trapped Charge in Charge-Trap Flash Memory Journal of Semiconductor Technology and Science 17 2 167-172 Apr. 2017
122 Youngmin Kim, Eunseon Yu, Junsoo Lee, and Seongjae Cho Nonvolatile Memory Materials/Devices Technologies Bulletin of the Korean Institute of Electrical and Electronic Material Engineers 30 3 31-43 Mar. 2017
121 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Seongjae Cho, and Byung-Gook Park Nano-cone resistive memory for ultralow power operation Nanotechnology 28 12 125207-1-125207-7 Mar. 2017
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