Journal Publications

Authors Title Journal Vol. No. Page Date
146 Suhyun Bang, Min-Hwi Kim, Tae-Hyeon Kim, Dong Keun Lee, Sungjun Kim, Seongjae Cho, and Byung-Gook Park Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application Solid-State Electronics 150 60-65 Dec. 2018
145 Myeongsun Kim, Jongmin Ha, Ikhyeon Kwon, Jae-Hee Han, Seongjae Cho, and Il Hwan Cho A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barrier for High-Temperature Applications Micromachines 9 11 581-589 Nov. 2018
144 Min-Woo Kwon, Myung-Hyun Baek, Sungmin Hwang, Kyungchul Park, Tejin Jang, Taehyung Kim, Junil Lee, Seongjae Cho, and Byung-Gook Park Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation Journal of Applied Physics 124 15 152107-1-152107-7 Sep. 2018
143 Bo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, Min Su Cho, Eunseon Yu, Jung-Hee Lee, Seongjae Cho, and In Man Kang Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless Transistor Journal of Nanoscience and Nanotechnology 18 9 6593-6597 Sep. 2018
142 Eunseon Yu, Kun Heo, and Seongjae Cho Characterization and Optimization of Inverted-T FinFET Under Nanoscale Dimensions IEEE Transactions on Electron Devices 65 8 3521-3527 Aug. 2018
141 Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park Uniformity Improvement of SiNx-Based Resistive Switching Memory by Suppressed Internal Overshoot Current IEEE Transactions on Nanotechnology 17 4 824-827 Jul. 2018
140 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Ying-Chen Chen, Yao-Feng Chang, Kyung-Chang Ryoo, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate Small 14 19 1704062-1-1704062-8 May 2018
139 Eunseon Yu, Youngmin Kim, Junsoo Lee, Yongbeom Cho, Won Jae Lee, and Seongjae Cho Processing and Characterization of Ultra-thin Poly-crystalline Silicon for Memory and Logic Applications Journal of Semiconductor Technology and Science 18 2 172-179 Apr. 2018
138 Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes IEEE Transactions on Electron Devices 65 4 1290-1297 Apr. 2018
137 Min-Hwi Kim, Sungjun Kim, Kyung-Chang Ryoo, Seongjae Cho, and Byung-Gook Park Circuit-level simulation of resistive-switching random-access memory cross-point array based on a highly reliable compact model Journal of Computational Electronics 17 1 273-278 Mar. 2018
136 Youngmin Kim, Min-Woo Kwon, Kyung-Chang Ryoo, Seongjae Cho, and Byung-Gook Park Design and Electrical Characterization of 2-T Thyristor RAM With Low Power Consumption IEEE Electron Device Letters 39 3 355-358 Mar. 2018
135 Tae-Hyeon Kim, Sungjun Kim, Hyungjin Kim, Min-Hwi Kim, Suhyun Bang, Seongjae Cho, and Byung-Gook Park Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+ Si memory device Solid-State Electronics 140 51-54 Feb. 2018
134 Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho SiGe Heterojunction FinFET Towards Tera-Hertz Applications Journal of the Korean Physical Society 72 4 527-532 Feb. 2018
133 Yunghun Jung, Yongbeom Cho, In Man Kang, and Seongjae Cho Analyses on Device Performances and Short-Channel Effects of Tunneling Field-Effect Transistor Having SiGe Source Junction Journal of The Institute of Electronics and Information Engineers 54 12 33-41 Dec. 2017
132 Min Su Cho, Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Chul-Ho Won, Jeong-Gil Kim, Junsoo Lee, Seongjae Cho, Jung-Hee Lee, and In Man Kang Electrical Performances of InN/GaN Tunneling Field-Effect Transistor Journal of Nanoscience and Nanotechnology 17 11 8355-8359 Nov. 2017
131 Bo Gyeong Kim, Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Min Su Cho, Jung-Hee Lee, Seongjae Cho, and In Man Kang Electrical Characteristics of Tunneling FIeld-Effect Transistors using Vertical Tunneling Operation Based on AlGaSb/InGaAs Journal of Electrical Engineering and Technology 12 6 2324-2332 Nov. 2017
130 Eunseon Yu, Seung Wook Ryu, Henry H. Radamson, and Seongjae Cho Structural and Optical Characteristics of Epitaxially Grown SiGe on Si for Electronic and Photonic Device Applications Journal of Nanoelectronics and Optoelectronics 12 10 1129-1133 Oct. 2017
129 Yongbeom Cho, Seongjae Cho, Byung-Gook Park, and James S. Harris, Jr. First-principle Study for More Accurate Optical and Electrical Characterization of Ge1-xSnx Alloy for Si and Group-IV Device Applications Journal of Semiconductor Technology and Science 17 5 675-684 Oct. 2017
128 Seunghyun Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Seongjae Cho, and Byung-Gook Park Investigation of Retention Characteristics Caused by Charge Loss for Charge Trap NAND Flash Memory Journal of Semiconductor Technology and Science 17 5 584-590 Oct. 2017
127 Tae-Hyeon Kim, Sungjun Kim, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park Design and Analysis for 3D Vertical Resistive Random Access Memory Structures with Silicon Bottom Electrodes Journal of Nanoscience and Nanotechnology 17 10 7160-7163 Oct. 2017
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