Patents

Title
9

Byung-Gook Park and Seongjae Cho, "Silicon-compatible germanium-based transistor with high hole mobility,"

● Korean patent filed, 10-2013-0147924, Nov. 29, 2013. 

● Korean patent registered, 10-1515071, Apr. 20, 2015.

United States patent filed, 14/556,327, Dec. 1, 2014.

United States patent registered, US 9,245,990 B2, Jan. 26, 2016.

8

Byung-Gook Park, Seongjae Cho, and In Man Kang, "Compound tunneling field effect transistor integrated on silicon substrate and method for fabricating the same,"

● Patent Cooperation Treaty (PCT) filed, PCT/US11/68064, Dec. 30, 2011.

● United States patent filed, 14/357,685, May 12, 2014.

United States patent registered, US 9,136,363 B2, Sep. 15, 2015.

● Korean patent filed, 10-2014-7018033, Jun. 30, 2014. 

Korean patent registered, 10-1582623, Dec. 29, 2015.

7

Byung-Gook Park, Seongjae Cho, and In Man Kang, "Silicon-compatible compound junctionless field effect transistor,"

● United States patent filed, 13/653,523, Oct. 17, 2012. 

● United States patent registered, US 8,878,251 B2, Nov. 4, 2014.

Korean patent filed, 10-2012-0141068, Dec. 6, 2012.

Korean patent registered, 10-1431774, Aug. 12, 2014.

6

Byung-Gook Park, James S. Harris, Jr., and Seongjae Cho, "Germanium electroluminescence device and fabrication method of the same,"

● United States patent filed, 13/776,879, Feb. 26, 2013. 

● United States patent registered, US 8,847,204 B2, Sep. 30, 2014.

Korean patent filed, 10-2013-0034277, Mar. 29, 2013.

● Korean patent registered, 10-1437926, Aug. 29, 2014.

 

5

Byung-Gook Park, Seongjae Cho, and Won Bo Shim, "3D stacked array having cut-off gate line and fabrication method thereof,"

● Korean patent filed, 10-2010-0030748, Apr. 5, 2010. 

● Korean patent registered, 10-1110355, Jan. 19, 2012.

United States patent filed, 13/023,646, Feb. 9, 2011.

● United States patent registered, US 8,786,004 B2, Jul. 22, 2014.

 

4

Byung-Gook Park and Seongjae Cho, "One-time programmable nonvolatile memory array having vertically staacked structure and method for operating and fabricating the same,"

● Korean patent filed, 10-2010-0123658, Dec. 6, 2010. 

● Korean patent registered, 10-1147481, May 11, 2012.

 

3

Byung-Gook Park and Seongjae Cho, "NAND flash memory array having cut-off gate lines, operating and fabricating method of the same,"

● Korean patent filed, 10-2008-0014125, Feb. 15, 2008.

● Korean patent registered, 10-0966265, Jun. 18, 2010.

United States patent filed, 12/361,107, Jan. 20, 2009.

United States patent registered, US 7,995,390, Aug. 9, 2011.

United States patent filed (divisional), 13/170,533, Jun. 28, 2011.

● United States patent registered, US 8,394,698, Mar. 12, 2013.  

2

Byung-Gook Park, Seongjae Cho, and Jung Hoon Lee, "One-time programmable nonvolatile memory array and method for operating and fabricating the same,"

● Korean patent filed, 10-2009-0102324, Oct. 27, 2009. 

● Korean patent registered, 10-1067412, Sep. 19, 2011.

 

1

Byung-Gook Park and Seongjae Cho, "NAND flash memory array having pillar structure and fabricating method of the same,"

● Korean patent filed, 10-2006-0055596, Jun. 20, 2006. 

● Korean patent registered, 10-07770196, Nov. 9, 2007.

United States patent filed, 11/629,601, Dec. 14, 2006.

● United States patent filed (divisional), 13/222,246, Aug. 31, 2011.

● United States patent, registered, US 8,324,060 B2, Dec. 4, 2012.

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