Conferences

Authors Title Conference Page Venue Date
235 Daewoong Kwon, Jae Yoon Lee, and Seongjae Cho A Vertical 1T DRAM with Source-Sharing Storage Pocket for Low-Power Operation 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 223-225 Kitakyushu, Japan Jul. 2-4, 2018
234 Young Jun Yoon, Bo Gyeong Kim, Min Su Cho, Jae Hwa Seo, Seongjae Cho, and In Man Kang Polycrystalline Silicon MOSFET-based Capacitorless One-Transistor Dynamic Random-Access Memory with Asymmetric Double-gate Structure 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 211-213 Kitakyushu, Japan Jul. 2-4, 2018
233 Eunseon Yu and Seongjae Cho A more energy-efficient and highly retaining 1T DRAM with SiGe quantum well 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 205-207 Kitakyushu, Japan Jul. 2-4, 2018
232 Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park Reliability Prediction of a Wedge Structured CBRAM through Kinetic Monte Carlo Simulation 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 156-159 Kitakyushu, Japan Jul. 2-4, 2018
231 Min-Woo Kwon, Kyungchul Park, Myung-Hyun Baek, Sungmin Hwang, Tejin Jang, Junil Lee, Sungmin Hwang, Seongjae Cho, and Byung-Gook Park Fabrication of dual gate positive feedback field effect transistor co-integrated with CMOS 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 125-126 Kitakyushu, Japan Jul. 2-4, 2018
230 Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park Modeling the Voltage-Dependent Resistance Change Behavior of SiNx-Based Resistive Switching Memories 2018 IEIE Summer Conference 269-270 Jeju, Korea Jun. 27-29, 2018
229 Seoyeon Go, Jae Yoon Lee, Jae Yeon Lee, Soo Gil Kim, and Seongjae Cho Fabrication and characterization of Ni/GeOx/p+ Si ReRAM and development of its compact DC model with higher degree of model matching 2018 IEIE Summer Conference 215-218 Jeju, Korea Jun. 27-29, 2018
228 Haechang Lee, Yongbeom Cho, Yung Hun Jung, and Seongjae Cho Characterization of strained Si1-xGex by first-principle simulation based on modified Becke-Johnson exchange potential model 2018 IEIE Summer Conference 84-87 Jeju, Korea Jun. 27-29, 2018
227 Jae Yoon Lee, Youngmin Kim, Ikhyeon Kwon, Il Hwan Cho, Jae Yeon Lee, Soo Gil Kim, and Seongjae Cho Fabrication and Characterization of a Fully Si Compatible Forming-Free GeOx Resistive Switching Random-Access Memory 76th Device Research Conference (DRC) 153-154 Santa Barbara, USA Jun. 24-27, 2018
226 Yongbeom Cho, Eunseon Yu, Myung-Hyun Baek, Seongjae Cho, and Byung-Gook Park Semi-floating-gate (SFG) synaptic transistor capable of short- and long-term memory operations towards the hardware-driven neuromorphic system 2018 IEEE Silicon Nanoelectronics Workshop (SNW) 161-162 Honolulu, USA Jun. 17-18, 2018
225 Jae Yoon Lee, Min Hwi Kim, Yeon-Joon Choi, Jae Yeon Lee, Soo Gil Kim, Seongjae Cho, and Byung-Gook Park Compact modeling of fully Si-compatible forming-free Ni/GeOx/p+ Si resistive-switching random-access memory (ReRAM) 2018 IEEE Silicon Nanoelectronics Workshop (SNW) 55-56 Honolulu, USA Jun. 17-18, 2018
224 Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, and Byung-Gook Park Improvement of HfO2-based ReRAMs Nonlinearity and Reset Current Level by Tunneling Barrier Layer Thickness Modulation 2018 IEEE Silicon Nanoelectronics Workshop (SNW) 53-54 Honolulu, USA Jun. 17-18, 2018
223 Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho Si Fin/Si1-xGex Shell Channel p-Type FinFET for Sub-10-nm Technology Nodes and Its High-Speed Operation The 25th Korean Conference on Semiconductors (KCS) 515 Gangwon, Korea Feb. 5-7, 2018
222 Yung Hun Jung, In Man Kang, Wookyung Sun, Hyungsoon Shin, and Seongjae Cho Tunneling Field-Effect Transistor Having SiGe Source Junction and Its Small-Signal Equivalent Circuit Verification through Y-Parameter Analysis The 25th Korean Conference on Semiconductors (KCS) 403 Gangwon, Korea Feb. 5-7, 2018
221 Yeon-Joon Choi, Sungjun Kim, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park Close Investigation of Electric Field Concentration Effect in the Wedge Structure through Numerical Analysis for Nanoscale ReRAM Application The 25th Korean Conference on Semiconductors (KCS) 273 Gangwon, Korea Feb. 5-7, 2018
220 Eunseon Yu and Seongjae Cho Inverted-T FinFET for High-Performance Logic and Its Optimal Design The 25th Korean Conference on Semiconductors (KCS) 240 Gangwon, Korea Feb. 5-7, 2018
219 Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Seongjae Cho, and Byung-Gook Park Neuromorphic Behaviors of HfO2 ReRAM by Pulse Frequency Modulation The 25th Korean Conference on Semiconductors (KCS) 35 Gangwon, Korea Feb. 5-7, 2018
218 Jae Yoon Lee, Yung Hoon Jung, Jae Yeon Lee, Soo Gil Kim, and Seongjae Cho Optimization of pulse shape for suppressing current overshoot in ReRAM 2018 International Conference on Electronics, Information, and Communication (ICEIC) 857-860 Honolulu, USA Jan. 24-27, 2018
217 Seunghyun Kim, Youngmin Kim, Do-Bin Kim, Sang-Ho Lee, Seongjae Cho, and Byung-Gook Park Effects of charge centroid location on program characteristics in the charge-trap flash memory 2018 International Conference on Electronics, Information, and Communication (ICEIC) 228-230 Honolulu, USA Jan. 24-27, 2018
216 Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho Design of a novel SiGe FinFET with accurate modeling of saturation velocity and high-frequency performances The 10th International Conference on Advanced Materials and Devices (ICAMD) 723 Jeju, Korea Dec. 5-8, 2017
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