| 120 |
Sungjoon Kim, Seongjae Cho, Jaedeok Jeong, Sungjun Kim, Sungmin Hwang, Garam Kim, Sukho Yoon, and Byung-Gook Park |
InGaN/GaN light-emitting diode having direct hold injection plugs and its high-current operation |
Optics Express |
25 |
6 |
6440-6449 |
Mar. 2017 |
| 119 |
Seunghyun Kim, Sang-Ho Lee, Young-Goan Kim, Seongjae Cho, and Byung-Gook Park |
Highly compact and accurate circuit-level macro modeling of gate-all-around charge-trap flash memory |
Japanese Journal of Applied Physics |
56 |
1 |
014302-1-014302-5 |
Jan. 2017 |
| 118 |
Junsoo Lee, Youngmin Kim, and Seongjae Cho |
Design of Poly-Si Junctionless Fin-Channel FET With Quantum-Mechanical Drift-Diffusion Models for Sub-10-nm Technology Nodes |
IEEE Transactions on Electron Devices |
63 |
12 |
4610-4616 |
Dec. 2016 |
| 117 |
Youngmin Kim, Junsoo Lee, and Seongjae Cho |
Si CMOS Extension and Ge Technology Perspectives Forecast Through Metal-oxide-semiconductor Junctionless Field-Effect Transistor |
Journal of Semiconductor Technology and Science |
16 |
6 |
847-853 |
Dec. 2016 |
| 116 |
Jeongmin Lee, Il Hwan Cho, Dongsun Seo, Seongjae Cho, and Byung-Gook Park |
Crystallization and Characterization of GeSn Deposited on Si with Ge Buffer Layer by Low-temperature Sputter Epitaxy |
Journal of Semiconductor Technology and Science |
16 |
6 |
854-859 |
Dec. 2016 |
| 115 |
Eunseon Yu and Seongjae Cho |
Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel |
Japanese Journal of Applied Physics |
55 |
11 |
114001-1-114001-8 |
Nov. 2016 |
| 114 |
Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Seongjae Cho, and Byung-Gook Park |
Dopant concentration dependent resistive switching characteristics in Cu/SiNx/Si structure |
Journal of Alloys and Compounds |
686 |
|
479-483 |
Nov. 2016 |
| 113 |
Jae Hwa Seo, Young Jun Yoon, Young-Woo Jo, Dong-Hyeok Son, Seongjae Cho, Hyuck-In Kwon, Jung-Hee Lee, and In Man Kang |
Design Optimization of InAs-Based Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (TFET) |
Journal of Nanoscience and Nanotechnology |
16 |
10 |
10199-10203 |
Oct. 2016 |
| 112 |
Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Sub-100-nA-Operating Si-Compatible Ni/Ti/HfO2/SiO2/Si RRAM Device for High-Density Integration and Low-Power Applications |
Journal of Nanoscience and Nanotechnology |
16 |
10 |
10247-10251 |
Oct. 2016 |
| 111 |
Hyungjin Kim, Seongjae Cho, Min-Chul Sun, Jungjin Park, Sungmin Hwang, and Byung-Gook Park |
Simulation Study on Silicon-Based Floating Body Synaptic Transistor with Short- and Long-Term Memory Functions and Its Spike Timing-Dependent Plasticity |
Journal of Semiconductor Technology and Science |
16 |
5 |
657-663 |
Oct. 2016 |
| 110 |
Dong Hua Li, Wandong Kim, Won Bo Shim, Se Hwan Park, Yoon Kim, Gil Sung Lee, Doo-Hyun Kim, Jung Hoon Lee, Jang-Gn Yun, Seongjae Cho, Il Han Park, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park |
Improvement of Characteristics with a Sub-5 nm Ge-Doped Silicon Nitride Layer in Charge Trap Flash Memory Cells |
Nanoscience and Nanotechnology Letters |
8 |
7 |
577-580 |
Jul. 2016 |
| 109 |
Young Jun Yoon, Jae Hwa Seo, Seongjae Cho, Hyuck-In Kwon, Jung-Hee Lee, and In Man Kang |
Effects of dual-spacer dielectrics on low-power and high-speed performance of sub-10 nm tunneling field-effect transistors |
Japanese Journal of Applied Physics |
55 |
6S1 |
06GG02-1-06GG02-5 |
Jun. 2016 |
| 108 |
Sungjun Kim, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park |
Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell |
IEICE Transactions on Electronics |
E99-C |
5 |
547-550 |
May 2016 |
| 107 |
Sungjun Kim, Hyungjin Kim, Sunghun Jung, Min-Hwi Kim, Sang-Ho Lee, Seongjae Cho, and Byung-Gook Park |
Tuning resistive switching parameters in Si3N4-based RRAM for three-dimensional vertical resistive memory applications |
Journal of Alloys and Compounds |
663 |
|
419-423 |
Apr. 2016 |
| 106 |
Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device |
Journal of Semiconductor Technology and Science |
16 |
2 |
147-152 |
Apr. 2016 |
| 105 |
Young Jun Yoon, Jae Hwa Seo, Seongjae Cho, Hyuck-In Kwon, Jung-Hee Lee, and In Man Kang |
Sub-10 nm Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor with Vertical Tunneling Operation for Ultra-Low-Power Applications |
Journal of Semiconductor Technology and Science |
16 |
2 |
172-178 |
Apr. 2016 |
| 104 |
Youngmin Kim, Junsoo Lee, Yongbeom Cho, Won Jae Lee, and Seongjae Cho |
High-Speed Low-Power Junctionless Field-Effect Transistor with Ultra-Thin Poly-Si Channel for Sub-10-nm Technology Node |
Journal of Semiconductor Technology and Science |
16 |
2 |
159-165 |
Apr. 2016 |
| 103 |
Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Improved resistive switching properties in SiOx-based resistive random-access memory cell with Ti buffer layer |
Journal of Vacuum Science & Technology B |
34 |
2 |
022204-1-022204-5 |
Mar./Apr. 2016 |
| 102 |
Mina Yun and Seongjae Cho |
Process Modeling of Germanium Condensation and Application to Nanowire PMOSFET |
Journal of The Institute of Electronics and Information Engineers |
53 |
3 |
350-356 |
Mar. 2016 |
| 101 |
Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Fully Si compatible SiN resistive switching memory with large self-rectification ratio |
AIP Advances |
6 |
1 |
015021-1-015021-6 |
Jan. 2016 |
Gachon University