| 171 |
Ji-Ho Ryu, Boram Kim, Fayyaz Hussain, Muhammad Ismail, Chandreswar Mahata, Teresa Oh, Muhammad Imran, Kyung Kyu Min, Tae-Hyeon Kim, Byung-Do Yang, Seongjae Cho, Byung-Gook Park, Yoon Kim, and Sungjun Kim |
Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering |
IEEE Access |
8 |
|
130678-130686 |
Jul. 2020 |
| 170 |
Tae-Hyeon Kim, Min-Hwi Kim, Suhyun Bang, Dong Keun Lee, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Fabrication and Characterization of TiOx Memristor for Synaptic Device Application |
IEEE Transactions on Nanotechnology |
19 |
|
475-480 |
Jul. 2020 |
| 169 |
Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
HfOx-based nano-wedge structured resistive switching memory device operating at sub-μA current for neuromorphic computing application |
Semiconductor Science and Technology |
35 |
5 |
055002-1-055002-10 |
May 2020 |
| 168 |
Kyungho Hong, Kyung Kyu Min, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Yeon Joon Choi, Chae Soo Kim, Jae Yoon Lee, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Investigation of the Thermal Recovery From Reset Breakdown of a SiNx-Based RRAM |
IEEE Transactions on Electron Devices |
67 |
4 |
1600-1605 |
Apr. 2020 |
| 167 |
Md. Hasan Raza Ansari, Nupur Navlakha, Jae Yoon Lee, and Seongjae Cho |
Double-Gate Junctionless 1T DRAM With Physical Barriers for Retention Improvement |
IEEE Transactions on Electron Devices |
67 |
4 |
1471-1479 |
Apr. 2020 |
| 166 |
Jun Tae Jang, Jungi Min, Donguk Kim, Jingyu Park, Sung-Jin Choi, Dong Myong Kim, Seongjae Cho, and Dae Hwan Kim |
A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence |
Solid-State Electronics |
166 |
|
107764-1-107764-7 |
Apr. 2020 |
| 165 |
Dong Chang Han, Deok Jin Jang, Jae Yoon Lee, Seongjae Cho, and Il Hwan Cho |
Investigation of Modified 1T DRAM with Twin Gate Tunneling Field Effect Transistor for Improved Retention Characteristics |
Journal of Semiconductor Technology and Science |
20 |
2 |
145-150 |
Apr. 2020 |
| 164 |
Yongjin Jeong, In Man Kang, Seongjae Cho, Jisun Park, and Hyungsoon Shin |
Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor |
Journal of Nanoscience and Nanotechnology |
20 |
2 |
4920-4925 |
Feb. 2020 |
| 163 |
Hyeonjeong Kim, Songyi Yoo, In Man Kang, Seongjae Cho, Wookyung Sun, and Hyungsoon Shin |
Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM |
Micromachines |
11 |
2 |
228-1-228-8 |
Feb. 2020 |
| 162 |
Seoyeon Go, Won Jae Lee, and Seongjae Cho |
A More Accurate Analytical DC Compact Modeling of Tunneling Field-Effect Transistor for SPICE Simulation |
Journal of Semiconductor Technology and Science |
19 |
6 |
551-560 |
Dec. 2019 |
| 161 |
Eunseon Yu, Baegmo Son, Byungmin Kam, Yong Sang Joh, Sangjoon Park, Won-Jun Lee, Jongwan Jung, and Seongjae Cho |
Si-core/SiGe-shell channel nanowire FET for sub-10-nm logic technology in the THz regime |
Wiley ETRI Journal |
41 |
6 |
829-837 |
Dec. 2019 |
| 160 |
Ki Seok Kim, You Jin Ji, Ki Hyun Kim, Seunghyuk Choi, Dong-Ho Kang, Keun Heo, Seongjae Cho, Soonmin Yim, Sungjoo Lee, Jin-Hong Park, Yeon Sik Jung, and Geun Young Yeom |
Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction |
Nature Communications |
10 |
|
4701-1-4701-10 |
Oct. 2019 |
| 159 |
Jae Hwa Seo, Young Jun Yoon, Seongjae Cho, In Man Kang, and Jong-Ho Lee |
Design Optimization and Analysis of InGaAs/InAs/InGaAs Heterojunction-Based Electron Hole Bilayer Tunneling FETs |
Journal of Nanoscience and Nanotechnology |
19 |
10 |
6070-6076 |
Oct. 2019 |
| 158 |
Hyeonjeong Kim, In Man Kang, Seongjae Cho, Wookyung Sun, and Hyungsoon Shin |
Analysis of operation characteristics of junctionless poly-Si 1T DRAM in accumulation mode |
Semiconductor Science and Technology |
34 |
10 |
15007-1-15007-8 |
Oct. 2019 |
| 157 |
Eunseon Yu, Seongjae Cho, and Byung-Gook Park |
A Silicon-Compatible Synaptic Transistor Capable of Multiple Synaptic Weights toward Energy-Efficient Neuromorphic Systems |
Electronics |
8 |
10 |
1102-1-1102-12 |
Sep. 2019 |
| 156 |
Yung Hun Jung, In Man Kang, and Seongjae Cho |
Microwave analysis of SiGe heterojunction double-gate tunneling field-effect transistor through its small-signal equivalent circuit |
International Journal of RF and Microwave Computer-Aided Engineering |
29 |
6 |
21678-1-21678-7 |
Jun. 2019 |
| 155 |
Young Jun Yoon, Jae Hwa Seo, Seongjae Cho, Jong-Ho Lee, and In Man Kang |
A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance |
Applied Physics Letters |
114 |
18 |
183503-1-183503-5 |
May 2019 |
| 154 |
Jongmin Ha, Jae Yoon Lee, Myeongseon Kim, Seongjae Cho, and Il Hwan Cho |
Investigation and Optimization of Double-Gate MPI 1T DRAM with Gate-Induced Drain Leakage Operation |
Journal of Semiconductor Technology and Science |
19 |
2 |
165-171 |
Apr. 2019 |
| 153 |
Jae Hwa Seo, Young Jun Yoon, Eunseon Yu, Wookyung Sun, Hyungsoon Shin, In Man Kang, Jong-Ho Lee, and Seongjae Cho |
Fabrication and Characterization of a Thin-Body Poly-Si 1T DRAM with Charge-Trap Effect |
IEEE Electron Device Letters |
40 |
4 |
566-569 |
Apr. 2019 |
| 152 |
Eunseon Yu, Seongjae Cho, Hyungsoon Shin, and Byung-Gook Park |
A Band-Engineered One-Transistor DRAM with Improved Data Retention and Power Efficiency |
IEEE Electron Device Letters |
40 |
4 |
562-565 |
Apr. 2019 |
Gachon University