| 161 |
Eunseon Yu, Baegmo Son, Byungmin Kam, Yong Sang Joh, Sangjoon Park, Won-Jun Lee, Jongwan Jung, and Seongjae Cho |
Si-core/SiGe-shell channel nanowire FET for sub-10-nm logic technology in the THz regime |
Wiley ETRI Journal |
41 |
6 |
829-837 |
Dec. 2019 |
| 160 |
Ki Seok Kim, You Jin Ji, Ki Hyun Kim, Seunghyuk Choi, Dong-Ho Kang, Keun Heo, Seongjae Cho, Soonmin Yim, Sungjoo Lee, Jin-Hong Park, Yeon Sik Jung, and Geun Young Yeom |
Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction |
Nature Communications |
10 |
|
4701-1-4701-10 |
Oct. 2019 |
| 159 |
Jae Hwa Seo, Young Jun Yoon, Seongjae Cho, In Man Kang, and Jong-Ho Lee |
Design Optimization and Analysis of InGaAs/InAs/InGaAs Heterojunction-Based Electron Hole Bilayer Tunneling FETs |
Journal of Nanoscience and Nanotechnology |
19 |
10 |
6070-6076 |
Oct. 2019 |
| 158 |
Hyeonjeong Kim, In Man Kang, Seongjae Cho, Wookyung Sun, and Hyungsoon Shin |
Analysis of operation characteristics of junctionless poly-Si 1T DRAM in accumulation mode |
Semiconductor Science and Technology |
34 |
10 |
15007-1-15007-8 |
Oct. 2019 |
| 157 |
Eunseon Yu, Seongjae Cho, and Byung-Gook Park |
A Silicon-Compatible Synaptic Transistor Capable of Multiple Synaptic Weights toward Energy-Efficient Neuromorphic Systems |
Electronics |
8 |
10 |
1102-1-1102-12 |
Sep. 2019 |
| 156 |
Yung Hun Jung, In Man Kang, and Seongjae Cho |
Microwave analysis of SiGe heterojunction double-gate tunneling field-effect transistor through its small-signal equivalent circuit |
International Journal of RF and Microwave Computer-Aided Engineering |
29 |
6 |
21678-1-21678-7 |
Jun. 2019 |
| 155 |
Young Jun Yoon, Jae Hwa Seo, Seongjae Cho, Jong-Ho Lee, and In Man Kang |
A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance |
Applied Physics Letters |
114 |
18 |
183503-1-183503-5 |
May 2019 |
| 154 |
Jongmin Ha, Jae Yoon Lee, Myeongseon Kim, Seongjae Cho, and Il Hwan Cho |
Investigation and Optimization of Double-Gate MPI 1T DRAM with Gate-Induced Drain Leakage Operation |
Journal of Semiconductor Technology and Science |
19 |
2 |
165-171 |
Apr. 2019 |
| 153 |
Jae Hwa Seo, Young Jun Yoon, Eunseon Yu, Wookyung Sun, Hyungsoon Shin, In Man Kang, Jong-Ho Lee, and Seongjae Cho |
Fabrication and Characterization of a Thin-Body Poly-Si 1T DRAM with Charge-Trap Effect |
IEEE Electron Device Letters |
40 |
4 |
566-569 |
Apr. 2019 |
| 152 |
Eunseon Yu, Seongjae Cho, Hyungsoon Shin, and Byung-Gook Park |
A Band-Engineered One-Transistor DRAM with Improved Data Retention and Power Efficiency |
IEEE Electron Device Letters |
40 |
4 |
562-565 |
Apr. 2019 |
| 151 |
Dong Keun Lee, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation |
Solid-State Electronics |
154 |
|
31-35 |
Apr. 2019 |
| 150 |
Min Su Cho, Young Jun Yoon, Seongjae Cho, and In Man Kang |
Design and analysis of logic inverter using antimonide-based compound semiconductor junctionless transistor |
Applied Physics A |
125 |
3 |
173-1-173-9 |
Mar. 2019 |
| 149 |
Jae Yoon Lee, Youngmin Kim, Min-Hwi Kim, Seoyeon Go, Seung Wook Ryu, Jae Yeon Lee, Tae Jung Ha, Soo Gil Kim, Seongjae Cho, and Byung-Gook Park |
Ni/GeOx/p+ Si resistive-switching random-access memory with full Si processing compatibility and its characterization and modeling |
Vacuum |
161 |
|
63-70 |
Mar. 2019 |
| 148 |
Yongbeom Cho, Jae Yoon Lee, Eunseon Yu, Jae-Hee Han, Myung-Hyun Baek, Seongjae Cho, and Byung-Gook Park |
Design and Characterization of Semi-Floating-Gate Synaptic Transistor |
Micromachines |
10 |
1 |
32-41 |
Jan. 2019 |
| 147 |
Yung Hun Jung, In Man Kang, and Seongjae Cho |
Analysis of tunneling field-effect transistor with germanium source junction using small-signal equivalent circuit |
Microwave and Optical Technology Letters |
60 |
12 |
2922-2926 |
Dec. 2018 |
| 146 |
Suhyun Bang, Min-Hwi Kim, Tae-Hyeon Kim, Dong Keun Lee, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application |
Solid-State Electronics |
150 |
|
60-65 |
Dec. 2018 |
| 145 |
Myeongsun Kim, Jongmin Ha, Ikhyeon Kwon, Jae-Hee Han, Seongjae Cho, and Il Hwan Cho |
A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barrier for High-Temperature Applications |
Micromachines |
9 |
11 |
581-589 |
Nov. 2018 |
| 144 |
Min-Woo Kwon, Myung-Hyun Baek, Sungmin Hwang, Kyungchul Park, Tejin Jang, Taehyung Kim, Junil Lee, Seongjae Cho, and Byung-Gook Park |
Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation |
Journal of Applied Physics |
124 |
15 |
152107-1-152107-7 |
Sep. 2018 |
| 143 |
Bo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, Min Su Cho, Eunseon Yu, Jung-Hee Lee, Seongjae Cho, and In Man Kang |
Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless Transistor |
Journal of Nanoscience and Nanotechnology |
18 |
9 |
6593-6597 |
Sep. 2018 |
| 142 |
Eunseon Yu, Kun Heo, and Seongjae Cho |
Characterization and Optimization of Inverted-T FinFET Under Nanoscale Dimensions |
IEEE Transactions on Electron Devices |
65 |
8 |
3521-3527 |
Aug. 2018 |
Gachon University