Journal Publications

Authors Title Journal Vol. No. Page Date
171 Ji-Ho Ryu, Boram Kim, Fayyaz Hussain, Muhammad Ismail, Chandreswar Mahata, Teresa Oh, Muhammad Imran, Kyung Kyu Min, Tae-Hyeon Kim, Byung-Do Yang, Seongjae Cho, Byung-Gook Park, Yoon Kim, and Sungjun Kim Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering IEEE Access 8 130678-130686 Jul. 2020
170 Tae-Hyeon Kim, Min-Hwi Kim, Suhyun Bang, Dong Keun Lee, Sungjun Kim, Seongjae Cho, and Byung-Gook Park Fabrication and Characterization of TiOx Memristor for Synaptic Device Application IEEE Transactions on Nanotechnology 19 475-480 Jul. 2020
169 Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, and Byung-Gook Park HfOx-based nano-wedge structured resistive switching memory device operating at sub-μA current for neuromorphic computing application Semiconductor Science and Technology 35 5 055002-1-055002-10 May 2020
168 Kyungho Hong, Kyung Kyu Min, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Yeon Joon Choi, Chae Soo Kim, Jae Yoon Lee, Sungjun Kim, Seongjae Cho, and Byung-Gook Park Investigation of the Thermal Recovery From Reset Breakdown of a SiNx-Based RRAM IEEE Transactions on Electron Devices 67 4 1600-1605 Apr. 2020
167 Md. Hasan Raza Ansari, Nupur Navlakha, Jae Yoon Lee, and Seongjae Cho Double-Gate Junctionless 1T DRAM With Physical Barriers for Retention Improvement IEEE Transactions on Electron Devices 67 4 1471-1479 Apr. 2020
166 Jun Tae Jang, Jungi Min, Donguk Kim, Jingyu Park, Sung-Jin Choi, Dong Myong Kim, Seongjae Cho, and Dae Hwan Kim A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence Solid-State Electronics 166 107764-1-107764-7 Apr. 2020
165 Dong Chang Han, Deok Jin Jang, Jae Yoon Lee, Seongjae Cho, and Il Hwan Cho Investigation of Modified 1T DRAM with Twin Gate Tunneling Field Effect Transistor for Improved Retention Characteristics Journal of Semiconductor Technology and Science 20 2 145-150 Apr. 2020
164 Yongjin Jeong, In Man Kang, Seongjae Cho, Jisun Park, and Hyungsoon Shin Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor Journal of Nanoscience and Nanotechnology 20 2 4920-4925 Feb. 2020
163 Hyeonjeong Kim, Songyi Yoo, In Man Kang, Seongjae Cho, Wookyung Sun, and Hyungsoon Shin Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM Micromachines 11 2 228-1-228-8 Feb. 2020
162 Seoyeon Go, Won Jae Lee, and Seongjae Cho A More Accurate Analytical DC Compact Modeling of Tunneling Field-Effect Transistor for SPICE Simulation Journal of Semiconductor Technology and Science 19 6 551-560 Dec. 2019
161 Eunseon Yu, Baegmo Son, Byungmin Kam, Yong Sang Joh, Sangjoon Park, Won-Jun Lee, Jongwan Jung, and Seongjae Cho Si-core/SiGe-shell channel nanowire FET for sub-10-nm logic technology in the THz regime Wiley ETRI Journal 41 6 829-837 Dec. 2019
160 Ki Seok Kim, You Jin Ji, Ki Hyun Kim, Seunghyuk Choi, Dong-Ho Kang, Keun Heo, Seongjae Cho, Soonmin Yim, Sungjoo Lee, Jin-Hong Park, Yeon Sik Jung, and Geun Young Yeom Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction Nature Communications 10 4701-1-4701-10 Oct. 2019
159 Jae Hwa Seo, Young Jun Yoon, Seongjae Cho, In Man Kang, and Jong-Ho Lee Design Optimization and Analysis of InGaAs/InAs/InGaAs Heterojunction-Based Electron Hole Bilayer Tunneling FETs Journal of Nanoscience and Nanotechnology 19 10 6070-6076 Oct. 2019
158 Hyeonjeong Kim, In Man Kang, Seongjae Cho, Wookyung Sun, and Hyungsoon Shin Analysis of operation characteristics of junctionless poly-Si 1T DRAM in accumulation mode Semiconductor Science and Technology 34 10 15007-1-15007-8 Oct. 2019
157 Eunseon Yu, Seongjae Cho, and Byung-Gook Park A Silicon-Compatible Synaptic Transistor Capable of Multiple Synaptic Weights toward Energy-Efficient Neuromorphic Systems Electronics 8 10 1102-1-1102-12 Sep. 2019
156 Yung Hun Jung, In Man Kang, and Seongjae Cho Microwave analysis of SiGe heterojunction double-gate tunneling field-effect transistor through its small-signal equivalent circuit International Journal of RF and Microwave Computer-Aided Engineering 29 6 21678-1-21678-7 Jun. 2019
155 Young Jun Yoon, Jae Hwa Seo, Seongjae Cho, Jong-Ho Lee, and In Man Kang A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance Applied Physics Letters 114 18 183503-1-183503-5 May 2019
154 Jongmin Ha, Jae Yoon Lee, Myeongseon Kim, Seongjae Cho, and Il Hwan Cho Investigation and Optimization of Double-Gate MPI 1T DRAM with Gate-Induced Drain Leakage Operation Journal of Semiconductor Technology and Science 19 2 165-171 Apr. 2019
153 Jae Hwa Seo, Young Jun Yoon, Eunseon Yu, Wookyung Sun, Hyungsoon Shin, In Man Kang, Jong-Ho Lee, and Seongjae Cho Fabrication and Characterization of a Thin-Body Poly-Si 1T DRAM with Charge-Trap Effect IEEE Electron Device Letters 40 4 566-569 Apr. 2019
152 Eunseon Yu, Seongjae Cho, Hyungsoon Shin, and Byung-Gook Park A Band-Engineered One-Transistor DRAM with Improved Data Retention and Power Efficiency IEEE Electron Device Letters 40 4 562-565 Apr. 2019
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