Journal Publications

Authors Title Journal Vol. No. Page Date
126 Eunseon Yu, Seongjae Cho, and Byung-Gook Park An accurate simulation study on capacitance-voltage characteristics of metal-oxide-semiconductor field-effect transistors in novel structures Physica B: Condensed Matter 521 305-311 Sep. 2017
125 Yongbeom Cho, Eunseon Yu, and Seongjae Cho Design of a High-Hole-Mobility Ge Transistor for Si-Driven Heterojunction Integrated Circuits IDEC Journal of Integrated Circuits and Systems 3 3 13-19 Jul. 2017
124 Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory Solid-State Electronics 132 109-114 Jun. 2017
123 Seunghyun Kim, Dae Woong Kwon, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Hyungmin Kim, Young Goan Kim, Seongjae Cho, and Byung-Gook Park Characterization of the Vertical Position of the Trapped Charge in Charge-Trap Flash Memory Journal of Semiconductor Technology and Science 17 2 167-172 Apr. 2017
122 Youngmin Kim, Eunseon Yu, Junsoo Lee, and Seongjae Cho Nonvolatile Memory Materials/Devices Technologies Bulletin of the Korean Institute of Electrical and Electronic Material Engineers 30 3 31-43 Mar. 2017
121 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Seongjae Cho, and Byung-Gook Park Nano-cone resistive memory for ultralow power operation Nanotechnology 28 12 125207-1-125207-7 Mar. 2017
120 Sungjoon Kim, Seongjae Cho, Jaedeok Jeong, Sungjun Kim, Sungmin Hwang, Garam Kim, Sukho Yoon, and Byung-Gook Park InGaN/GaN light-emitting diode having direct hold injection plugs and its high-current operation Optics Express 25 6 6440-6449 Mar. 2017
119 Seunghyun Kim, Sang-Ho Lee, Young-Goan Kim, Seongjae Cho, and Byung-Gook Park Highly compact and accurate circuit-level macro modeling of gate-all-around charge-trap flash memory Japanese Journal of Applied Physics 56 1 014302-1-014302-5 Jan. 2017
118 Junsoo Lee, Youngmin Kim, and Seongjae Cho Design of Poly-Si Junctionless Fin-Channel FET With Quantum-Mechanical Drift-Diffusion Models for Sub-10-nm Technology Nodes IEEE Transactions on Electron Devices 63 12 4610-4616 Dec. 2016
117 Youngmin Kim, Junsoo Lee, and Seongjae Cho Si CMOS Extension and Ge Technology Perspectives Forecast Through Metal-oxide-semiconductor Junctionless Field-Effect Transistor Journal of Semiconductor Technology and Science 16 6 847-853 Dec. 2016
116 Jeongmin Lee, Il Hwan Cho, Dongsun Seo, Seongjae Cho, and Byung-Gook Park Crystallization and Characterization of GeSn Deposited on Si with Ge Buffer Layer by Low-temperature Sputter Epitaxy Journal of Semiconductor Technology and Science 16 6 854-859 Dec. 2016
115 Eunseon Yu and Seongjae Cho Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel Japanese Journal of Applied Physics 55 11 114001-1-114001-8 Nov. 2016
114 Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Seongjae Cho, and Byung-Gook Park Dopant concentration dependent resistive switching characteristics in Cu/SiNx/Si structure Journal of Alloys and Compounds 686 479-483 Nov. 2016
113 Jae Hwa Seo, Young Jun Yoon, Young-Woo Jo, Dong-Hyeok Son, Seongjae Cho, Hyuck-In Kwon, Jung-Hee Lee, and In Man Kang Design Optimization of InAs-Based Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (TFET) Journal of Nanoscience and Nanotechnology 16 10 10199-10203 Oct. 2016
112 Sungjun Kim, Seongjae Cho, and Byung-Gook Park Sub-100-nA-Operating Si-Compatible Ni/Ti/HfO2/SiO2/Si RRAM Device for High-Density Integration and Low-Power Applications Journal of Nanoscience and Nanotechnology 16 10 10247-10251 Oct. 2016
111 Hyungjin Kim, Seongjae Cho, Min-Chul Sun, Jungjin Park, Sungmin Hwang, and Byung-Gook Park Simulation Study on Silicon-Based Floating Body Synaptic Transistor with Short- and Long-Term Memory Functions and Its Spike Timing-Dependent Plasticity Journal of Semiconductor Technology and Science 16 5 657-663 Oct. 2016
110 Dong Hua Li, Wandong Kim, Won Bo Shim, Se Hwan Park, Yoon Kim, Gil Sung Lee, Doo-Hyun Kim, Jung Hoon Lee, Jang-Gn Yun, Seongjae Cho, Il Han Park, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park Improvement of Characteristics with a Sub-5 nm Ge-Doped Silicon Nitride Layer in Charge Trap Flash Memory Cells Nanoscience and Nanotechnology Letters 8 7 577-580 Jul. 2016
109 Young Jun Yoon, Jae Hwa Seo, Seongjae Cho, Hyuck-In Kwon, Jung-Hee Lee, and In Man Kang Effects of dual-spacer dielectrics on low-power and high-speed performance of sub-10 nm tunneling field-effect transistors Japanese Journal of Applied Physics 55 6S1 06GG02-1-06GG02-5 Jun. 2016
108 Sungjun Kim, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell IEICE Transactions on Electronics E99-C 5 547-550 May 2016
107 Sungjun Kim, Hyungjin Kim, Sunghun Jung, Min-Hwi Kim, Sang-Ho Lee, Seongjae Cho, and Byung-Gook Park Tuning resistive switching parameters in Si3N4-based RRAM for three-dimensional vertical resistive memory applications Journal of Alloys and Compounds 663 419-423 Apr. 2016
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