249 |
Jae Yoon Lee and Seongjae Cho |
Design of SiC 1T DRAM Having a Quantum Well Structure |
2018 IEIE Fall Conference |
81 |
Incheon, Korea |
Nov. 23-24, 2018 |
248 |
Seoyeon Go, Jae Yoon Lee, Keun Heo, Jin-Hong Park, and Seongae Cho |
Multi-level memory device based on silicon CMOS processing |
2018 IEIE Fall Conference |
79 |
Incheon, Korea |
Nov. 23-24, 2018 |
247 |
Seongjae Cho, Eunseon Yu, Jae Hwa Seo, Baegmo Son, Sangjoon Park, Won-Jun Lee, and Jongwan Jung |
[Invited] Design of gate-all-around (GAA) device and SiGe epitaxy |
Fall Conference of the Korean Society of Semiconductor & Display Technology (KSDT) 2018 |
34-35 |
Seoul, Korea |
Nov. 22, 2018 |
246 |
Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Kyungho Hong, Chaesoo Kim, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Scaling Effect of Ti/HfO2/Si-p+ Stacked Resistive Switching device for Neuromorphic Application |
International Microprocesses and Nanotechnology Conference (MNC) 2018 |
16P-11-105L |
Sapporo, Japan |
Nov. 13-16, 2018 |
245 |
Min-Hwi Kim, Sungmin Hwang, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Sophisticated Conductivity Control of Gradual RRAM Cross-point Array for Reinforcement Learning |
International Microprocesses and Nanotechnology Conference (MNC) 2018 |
16P-11-103L |
Sapporo, Japan |
Nov. 13-16, 2018 |
244 |
Eunseon Yu, Seongjae Cho, and Byung-Gook Park |
A stand-alone synaptic transistor embedding SiGe quantum well and charge-trap layer with capabilities of short- and long-term potentiation in the biological system |
International Microprocesses and Nanotechnology Conference (MNC) 2018 |
15P-7-35 |
Sapporo, Japan |
Nov. 13-16, 2018 |
243 |
Yung Hun Jung, Jae Yoon Lee, Yongbeom Cho, Seongjae Cho, Hoon Heo, and Yun Hyun Cho |
Light Disturbance in Photodetector Simulation for Vehicle-to-Vehicle Visible Light Communication |
Asia Communications and Photonics Conference (ACP) 2018 |
Su2A.256 |
Hangzhou, China |
Oct. 26-29, 2018 |
242 |
Eunseon Yu and Seongjae Cho |
A Highly Scalable and Energy-Efficient 1T DRAM Embedding a SiGe Quantum Well Structure for Significant Retention Enhancement |
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
255-257 |
Austin, USA |
Sep. 24-26, 2018 |
241 |
Eunseon Yu, Wookyung Sun, Jae Hwa Seo, In Man Kang, Hyungsoon Shin, and Seongjae Cho |
A Synaptic Transistor Featuring SiGe Quantum Well and Charge-Trap Layer for Short- and Long-Term Potentiation towards Neuromorphic System Application |
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials (SSDM) |
841-842 |
Tokyo, Japan |
Sep. 9-13, 2018 |
240 |
Yongbeom Cho, Myung-Hyun Baek, Seongjae Cho, and Byung-Gook Park |
Semi-Floating-Gate Synaptic Transistor (SFGST) and Its Array Architecture for Hardware-Driven Artificial Spike Neural Network (SNN) |
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials (SSDM) |
615-616 |
Tokyo, Japan |
Sep. 9-13, 2018 |
239 |
Jae Yoon Lee, Jongmin Ha, Il Hwan Cho, and Seongjae Cho |
Vertical Double-Gate 1T DRAM with an Asymmetric Oxide Barrier for Significant Enhancement of Data Retention |
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials (SSDM) |
151-152 |
Tokyo, Japan |
Sep. 9-13, 2018 |
238 |
Yung Hun Jung, In Man Kang, and Seongjae Cho |
Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime through Its Small-Signal Equivalent Circuit |
Progress In Electromagnetics Research Symposium (PIERS) 2018 |
171 |
Toyama, Japan |
Aug. 1-4, 2018 |
237 |
Yongbeom Cho and Seongjae Cho |
Semi-Floating-Gated Charge-Trap Synaptic Device for Artificial Spike Neural Network |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
400-402 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
236 |
Jongmin Ha, Jae Yoon Lee, Myeongseon Kim, Seongjae Cho, and Il Hwan Cho |
Investigation and optimization of double gate MPI 1T-DRAM structure with gate induced drain leakage operation |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
229-231 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
235 |
Daewoong Kwon, Jae Yoon Lee, and Seongjae Cho |
A Vertical 1T DRAM with Source-Sharing Storage Pocket for Low-Power Operation |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
223-225 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
234 |
Young Jun Yoon, Bo Gyeong Kim, Min Su Cho, Jae Hwa Seo, Seongjae Cho, and In Man Kang |
Polycrystalline Silicon MOSFET-based Capacitorless One-Transistor Dynamic Random-Access Memory with Asymmetric Double-gate Structure |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
211-213 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
233 |
Eunseon Yu and Seongjae Cho |
A more energy-efficient and highly retaining 1T DRAM with SiGe quantum well |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
205-207 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
232 |
Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park |
Reliability Prediction of a Wedge Structured CBRAM through Kinetic Monte Carlo Simulation |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
156-159 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
231 |
Min-Woo Kwon, Kyungchul Park, Myung-Hyun Baek, Sungmin Hwang, Tejin Jang, Junil Lee, Sungmin Hwang, Seongjae Cho, and Byung-Gook Park |
Fabrication of dual gate positive feedback field effect transistor co-integrated with CMOS |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
125-126 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
230 |
Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park |
Modeling the Voltage-Dependent Resistance Change Behavior of SiNx-Based Resistive Switching Memories |
2018 IEIE Summer Conference |
269-270 |
Jeju, Korea |
Jun. 27-29, 2018 |