Conferences

Authors Title Conference Page Venue Date
215 Yongbeom Cho, Youngmin Kim, Junsoo Lee, Seongjae Cho, and Byung-Gook Park Nanowire TFET-Based Floating-Body Synaptic Transistor Europe-Korea Conference on Science and Technology (EKC) 2017 ICTF-07 Stockholm, Sweden Jul. 26-29, 2017
214 Yunghun Jung and Seongjae Cho Enhancement of Device Performances of SiGe Tunneling Field-Effect Transistor and Short-Channel Effects Europe-Korea Conference on Science and Technology (EKC) 2017 ICTF-06 Stockholm, Sweden Jul. 26-29, 2017
213 Junsoo Lee, Eunseon Yu, and Seongjae Cho Electrical Characterization of Alumina and Hafina Prepared by Atomic-Layer Deposition under Various Process Conditions 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 384-387 Gyeongju, Korea Jul. 3-5, 2017
212 Jae Yoon Lee, Junsoo Lee, and Seongjae Cho Design and Characterization of Isotype-Doped Si/Ge Heterojunction Dual-Gate Tunneling Field-Effect Transistor 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 360-363 Gyeongju, Korea Jul. 3-5, 2017
211 Junsoo Lee, Yongbeom Cho, Youngmin Kim, Eunseon Yu, and Seongjae Cho Processing and Characterization of Ultra-Thin Poly-Crytalline Silicon for Memory and Logic Applications 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 233-236 Gyeongju, Korea Jul. 3-5, 2017
210 Seongjae Cho and Byung-Gook Park [Invited] Si and novel group-IV materials and devices for advanced VLSI system The 32nd International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) SS-01-04 Busan, Korea Jul. 2-5, 2017
209 Min-Woo Kwon, Sungmin Hwang, Myung-Hyun Baek, Seongjae Cho, and Byung-Gook Park Dual Gate Positive Feedback Field-Effect Transistor for Low Power Analog Circuit Silicon Nanoelectronics Workshop (SNW) 2017 115-116 Kyoto, Japan Jun. 4-5, 2017
208 Seunghyun Kim, Do-Bin Kim, Eunseon Yu, Sang-Ho Lee, Seongjae Cho, and Byung-Gook Park Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory Silicon Nanoelectronics Workshop (SNW) 2017 79-80 Kyoto, Japan Jun. 4-5, 2017
207 Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park Uniformity Improvement of SiNx-based Resistive Switching Memory by Suppressed Internal Overshoot Current Silicon Nanoelectronics Workshop (SNW) 2017 19-20 Kyoto, Japan Jun. 4-5, 2017
206 Yung Hun Jung, Yongbeom Cho, Youngmin Kim, Junsoo Lee, Eunseon Yu, and Seongjae Cho High-Frequency Characteristics of Tunneling Field-Effect Transistor Having Multi-Gate Structure 2017 IEIE Joint Conference on Microwave and Wave Propagation 47 Seoul, Korea May 19, 2017
205 Eunseon Yu, Junsoo Lee, and Seongjae Cho Ultra-Thin SiGe Channel FinFET for Sub-10-nm Technology Nodes The 24th Korean Conference on Semiconductors (KCS) 191 Hongcheon, Korea Feb. 13-15, 2017
204 Sungjun Kim, Tae-Hyeon Kim, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park Self-compliance bipolar resistive switching in SiN-based RRAM with MIS structure The 24th Korean Conference on Semiconductors (KCS) 190 Hongcheon, Korea Feb. 13-15, 2017
203 Sungjun Kim, Min-Hwi Kim, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park Improved Controllability of Conductance by Inserting Al2O3 in SiN-based Resistive Switching Memory The 24th Korean Conference on Semiconductors (KCS) 109 Hongcheon, Korea Feb. 13-15, 2017
202 Yongbeom Cho and Seongjae Cho Study on Material Properties of Tensile-Strained Ge and Sn-Incorporated Ge through First-Principle Simulation for Advanced Si CMOS Technology The 24th Korean Conference on Semiconductors (KCS) 93 Hongcheon, Korea Feb. 13-15, 2017
201 Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park Fabrication and Resistive Switching Characteristics of Silicon Nano-wedge Structure RRAM The 24th Korean Conference on Semiconductors (KCS) 51 Hongcheon, Korea Feb. 13-15, 2017
200 Youngmin Kim, Seongjae Cho, Hyungsoon Shin, and Byung-Gook Park Design and Operation of Capacitorless Si Volatile Memory Based on 2-Terminal Thyristor (2-T TRAM) The 24th Korean Conference on Semiconductors (KCS) 50 Hongcheon, Korea Feb. 13-15, 2017
199 Seunghyun Kim, Do-Bin Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Seongjae Cho, and Byung-Gook Park Compact modeling of NAND flash memory operation through accurate locating the vertical position of trapped charges The 24th Korean Conference on Semiconductors (KCS) 50 Hongcheon, Korea Feb. 13-15, 2017
198 Eunseon Yu, Seongjae Cho, and Byung-Gook Park Capacitance-Voltage Characterization of Ultra-Thin Floating-Body MOSFETs The 24th Korean Conference on Semiconductors (KCS) 34 Hongcheon, Korea Feb. 13-15, 2017
197 Junsoo Lee and Seongjae Cho Optimal Design of Si Dual-Gate Junctionless Tunneling Field-Effect Transistor The 24th Korean Conference on Semiconductors (KCS) 33 Hongcheon, Korea Feb. 13-15, 2017
196 Seunghyun Kim, Do-Bin Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Seongjae Cho, Byung-Gook Park Circuit-level macro modeling of charge-trap flash memory array 2017 International Conference on Electronics, Information, and Communication (ICEIC) 99-101 Phuket, Thailand Jan. 11-14, 2017
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