| 141 |
Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park |
Uniformity Improvement of SiNx-Based Resistive Switching Memory by Suppressed Internal Overshoot Current |
IEEE Transactions on Nanotechnology |
17 |
4 |
824-827 |
Jul. 2018 |
| 140 |
Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Ying-Chen Chen, Yao-Feng Chang, Kyung-Chang Ryoo, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park |
Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate |
Small |
14 |
19 |
1704062-1-1704062-8 |
May 2018 |
| 139 |
Eunseon Yu, Youngmin Kim, Junsoo Lee, Yongbeom Cho, Won Jae Lee, and Seongjae Cho |
Processing and Characterization of Ultra-thin Poly-crystalline Silicon for Memory and Logic Applications |
Journal of Semiconductor Technology and Science |
18 |
2 |
172-179 |
Apr. 2018 |
| 138 |
Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho |
Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes |
IEEE Transactions on Electron Devices |
65 |
4 |
1290-1297 |
Apr. 2018 |
| 137 |
Min-Hwi Kim, Sungjun Kim, Kyung-Chang Ryoo, Seongjae Cho, and Byung-Gook Park |
Circuit-level simulation of resistive-switching random-access memory cross-point array based on a highly reliable compact model |
Journal of Computational Electronics |
17 |
1 |
273-278 |
Mar. 2018 |
| 136 |
Youngmin Kim, Min-Woo Kwon, Kyung-Chang Ryoo, Seongjae Cho, and Byung-Gook Park |
Design and Electrical Characterization of 2-T Thyristor RAM With Low Power Consumption |
IEEE Electron Device Letters |
39 |
3 |
355-358 |
Mar. 2018 |
| 135 |
Tae-Hyeon Kim, Sungjun Kim, Hyungjin Kim, Min-Hwi Kim, Suhyun Bang, Seongjae Cho, and Byung-Gook Park |
Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+ Si memory device |
Solid-State Electronics |
140 |
|
51-54 |
Feb. 2018 |
| 134 |
Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho |
SiGe Heterojunction FinFET Towards Tera-Hertz Applications |
Journal of the Korean Physical Society |
72 |
4 |
527-532 |
Feb. 2018 |
| 133 |
Yunghun Jung, Yongbeom Cho, In Man Kang, and Seongjae Cho |
Analyses on Device Performances and Short-Channel Effects of Tunneling Field-Effect Transistor Having SiGe Source Junction |
Journal of The Institute of Electronics and Information Engineers |
54 |
12 |
33-41 |
Dec. 2017 |
| 132 |
Min Su Cho, Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Chul-Ho Won, Jeong-Gil Kim, Junsoo Lee, Seongjae Cho, Jung-Hee Lee, and In Man Kang |
Electrical Performances of InN/GaN Tunneling Field-Effect Transistor |
Journal of Nanoscience and Nanotechnology |
17 |
11 |
8355-8359 |
Nov. 2017 |
| 131 |
Bo Gyeong Kim, Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Min Su Cho, Jung-Hee Lee, Seongjae Cho, and In Man Kang |
Electrical Characteristics of Tunneling FIeld-Effect Transistors using Vertical Tunneling Operation Based on AlGaSb/InGaAs |
Journal of Electrical Engineering and Technology |
12 |
6 |
2324-2332 |
Nov. 2017 |
| 130 |
Eunseon Yu, Seung Wook Ryu, Henry H. Radamson, and Seongjae Cho |
Structural and Optical Characteristics of Epitaxially Grown SiGe on Si for Electronic and Photonic Device Applications |
Journal of Nanoelectronics and Optoelectronics |
12 |
10 |
1129-1133 |
Oct. 2017 |
| 129 |
Yongbeom Cho, Seongjae Cho, Byung-Gook Park, and James S. Harris, Jr. |
First-principle Study for More Accurate Optical and Electrical Characterization of Ge1-xSnx Alloy for Si and Group-IV Device Applications |
Journal of Semiconductor Technology and Science |
17 |
5 |
675-684 |
Oct. 2017 |
| 128 |
Seunghyun Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Seongjae Cho, and Byung-Gook Park |
Investigation of Retention Characteristics Caused by Charge Loss for Charge Trap NAND Flash Memory |
Journal of Semiconductor Technology and Science |
17 |
5 |
584-590 |
Oct. 2017 |
| 127 |
Tae-Hyeon Kim, Sungjun Kim, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park |
Design and Analysis for 3D Vertical Resistive Random Access Memory Structures with Silicon Bottom Electrodes |
Journal of Nanoscience and Nanotechnology |
17 |
10 |
7160-7163 |
Oct. 2017 |
| 126 |
Eunseon Yu, Seongjae Cho, and Byung-Gook Park |
An accurate simulation study on capacitance-voltage characteristics of metal-oxide-semiconductor field-effect transistors in novel structures |
Physica B: Condensed Matter |
521 |
|
305-311 |
Sep. 2017 |
| 125 |
Yongbeom Cho, Eunseon Yu, and Seongjae Cho |
Design of a High-Hole-Mobility Ge Transistor for Si-Driven Heterogeneous Integrated Circuits |
IDEC Journal of Integrated Circuits and Systems |
3 |
3 |
13-19 |
Jul. 2017 |
| 124 |
Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park |
Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory |
Solid-State Electronics |
132 |
|
109-114 |
Jun. 2017 |
| 123 |
Seunghyun Kim, Dae Woong Kwon, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Hyungmin Kim, Young Goan Kim, Seongjae Cho, and Byung-Gook Park |
Characterization of the Vertical Position of the Trapped Charge in Charge-Trap Flash Memory |
Journal of Semiconductor Technology and Science |
17 |
2 |
167-172 |
Apr. 2017 |
| 122 |
Youngmin Kim, Eunseon Yu, Junsoo Lee, and Seongjae Cho |
Nonvolatile Memory Materials/Devices Technologies |
Bulletin of the Korean Institute of Electrical and Electronic Material Engineers |
30 |
3 |
31-43 |
Mar. 2017 |
Gachon University