Journal Publications

Authors Title Journal Vol. No. Page Date
106 Sungjun Kim, Seongjae Cho, and Byung-Gook Park Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device Journal of Semiconductor Technology and Science 16 2 147-152 Apr. 2016
105 Young Jun Yoon, Jae Hwa Seo, Seongjae Cho, Hyuck-In Kwon, Jung-Hee Lee, and In Man Kang Sub-10 nm Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor with Vertical Tunneling Operation for Ultra-Low-Power Applications Journal of Semiconductor Technology and Science 16 2 172-178 Apr. 2016
104 Youngmin Kim, Junsoo Lee, Yongbeom Cho, Won Jae Lee, and Seongjae Cho High-Speed Low-Power Junctionless Field-Effect Transistor with Ultra-Thin Poly-Si Channel for Sub-10-nm Technology Node Journal of Semiconductor Technology and Science 16 2 159-165 Apr. 2016
103 Sungjun Kim, Seongjae Cho, and Byung-Gook Park Improved resistive switching properties in SiOx-based resistive random-access memory cell with Ti buffer layer Journal of Vacuum Science & Technology B 34 2 022204-1-022204-5 Mar./Apr. 2016
102 Mina Yun and Seongjae Cho Process Modeling of Germanium Condensation and Application to Nanowire PMOSFET Journal of The Institute of Electronics and Information Engineers 53 3 350-356 Mar. 2016
101 Sungjun Kim, Seongjae Cho, and Byung-Gook Park Fully Si compatible SiN resistive switching memory with large self-rectification ratio AIP Advances 6 1 015021-1-015021-6 Jan. 2016
100 Sungin Suh, Seung Wook Ryu, Seongjae Cho, Jun-Rae Kim, Seongkyung Kim, Cheol Seong Hwang, and Hyeong Joon Kim Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor Journal of Vacuum Science & Technology A 34 1 01A136-1-01A136-7 Jan. 2016
99 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park Gradual bipolar resistive switching in Ni/Si3N4/n+-Si resistive-switching memory device for high-density integration and low-power applications Solid-State Electronics 114 94-97 Dec. 2015
98 Seung Wook Ryu, Seongjae Cho, and Hyeong Joon Kim A Close Investigation Into the Microstructure of SiO2-Doped Ge2Sb2Te5 as a Phase-Changing Material for Nonvolatile Memory Application Science of Advanced Materials 7 11 2268-2372 Nov. 2015
97 Jeongmin Lee, Hong-Seok Kim, Jae-Hee Han, and Seongjae Cho A Study on Room-temperature Photoluminescence and Crystallinity of RF-sputtered GaN for a Cost-effective III-V-on-Si Platform Journal of the Korean Physical Society 67 10 1838-1843 Nov. 2015
96 Sungjun Kim, Seongjae Cho, Kyung-Chang Ryoo, and Byung-Gook Park Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure Journal of Vacuum Science & Technology B 33 6 062201-1-062201-6 Nov./Dec. 2015
95 Sung Yoon Kim, Jae Hwa Seo, Young Jun Yun, Ho-Young Lee, Seong Min Lee, Seongjae Cho, and In Man Kang Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications Journal of Nanoscience and Nanotechnology 15 10 7486-7492 Oct. 2015
94 Young Jun Yoon, Hye Rim Eun, Jae Hwa Seo, Hee-Sung Kang, Seong Min Lee, Jeongmin Lee, Seongjae Cho, Heung-Sik Tae, Jung-Hee Lee, and In Man Kang Short-Channel Tunneling Field-Effect Transistor with Drain-Overlap and Dual-Metal Gate Structure for Low-Power and High-Speed Operations Journal of Nanoscience and Nanotechnology 15 10 7430–7435 Oct. 2015
93 Jae Hwa Seo, Young Jun Yoon, Seongjae Cho, Heung-Sik Tae, Jung-Hee Lee, and In Man Kang Analyses on RF Performances of Silicon-Compatible InGaAs-Based Planar-Type and Fin-Type Junctionless Field-Effect Transistors Journal of Nanoscience and Nanotechnology 15 10 7615-7619 Oct. 2015
92 Seongmin Lee, Jeongmin Lee, and Seongjae Cho Design and characterization of electrically self-isolated GaN-on-Si junctionless fin-shaped-channel field-effect transistor with higher cost-effectiveness for low-power applications Japanese Journal of Applied Physics 54 8 084301-1-084301-6 Aug. 2015
91 Dong Hua Li, Wandong Kim, Won Bo Shim, Se Hwan Park, Yoon Kim, Gil Sung Lee, Doo-Hyun Kim, Jung Hoon Lee, Jang-Gn Yun, Seongjae Cho, Il Han Park, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park Effects of Gate/Blocking Oxide Energy Barrier on Memory Characteristics in Charge Trap Flash Memory Cells Nanoscience and Nanotechnology Letters 7 7 594-598 Jul. 2015
90 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park Resistive Swiching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals IEICE Transactions on Electronics E98-C 5 429-433 May 2015
89 Young Jae Kim, Young Jun Yoon, Jae Hwa Seo, Sung Min Lee, Seongjae Cho, Jung-Hee Lee, and In Man Kang Effect of Ga fraction in InGaAs channel on performances of gate-all-around tunneling field-effect transistor Semiconductor Science and Technology 30 1 015006-1-015006-6 Jan. 2015
88 Jae Hwa Seo, Young Jun Yoon, Seongmin Lee, Jung-Hee Lee, Seongjae Cho, and In Man Kang Design and analysis of Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) Current Applied Physics 15 3 208-212 Mar. 2015
87 Jin Su Kim, Young Jun Yoon, Jae Hwa Seo, Young In Jang, Jung-Hee Lee, Seongjae Cho, Gwan Min Yoo, and In Man Kang High-performance Ge/GaAs heterojunction tunneling FET with a channel engineering for sub-0.5 V operation Semiconductor Science and Technology 30 3 035020-1-035020-8 Mar. 2015
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