| 151 |
Dong Keun Lee, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation |
Solid-State Electronics |
154 |
|
31-35 |
Apr. 2019 |
| 150 |
Min Su Cho, Young Jun Yoon, Seongjae Cho, and In Man Kang |
Design and analysis of logic inverter using antimonide-based compound semiconductor junctionless transistor |
Applied Physics A |
125 |
3 |
173-1-173-9 |
Mar. 2019 |
| 149 |
Jae Yoon Lee, Youngmin Kim, Min-Hwi Kim, Seoyeon Go, Seung Wook Ryu, Jae Yeon Lee, Tae Jung Ha, Soo Gil Kim, Seongjae Cho, and Byung-Gook Park |
Ni/GeOx/p+ Si resistive-switching random-access memory with full Si processing compatibility and its characterization and modeling |
Vacuum |
161 |
|
63-70 |
Mar. 2019 |
| 148 |
Yongbeom Cho, Jae Yoon Lee, Eunseon Yu, Jae-Hee Han, Myung-Hyun Baek, Seongjae Cho, and Byung-Gook Park |
Design and Characterization of Semi-Floating-Gate Synaptic Transistor |
Micromachines |
10 |
1 |
32-41 |
Jan. 2019 |
| 147 |
Yung Hun Jung, In Man Kang, and Seongjae Cho |
Analysis of tunneling field-effect transistor with germanium source junction using small-signal equivalent circuit |
Microwave and Optical Technology Letters |
60 |
12 |
2922-2926 |
Dec. 2018 |
| 146 |
Suhyun Bang, Min-Hwi Kim, Tae-Hyeon Kim, Dong Keun Lee, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application |
Solid-State Electronics |
150 |
|
60-65 |
Dec. 2018 |
| 145 |
Myeongsun Kim, Jongmin Ha, Ikhyeon Kwon, Jae-Hee Han, Seongjae Cho, and Il Hwan Cho |
A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barrier for High-Temperature Applications |
Micromachines |
9 |
11 |
581-589 |
Nov. 2018 |
| 144 |
Min-Woo Kwon, Myung-Hyun Baek, Sungmin Hwang, Kyungchul Park, Tejin Jang, Taehyung Kim, Junil Lee, Seongjae Cho, and Byung-Gook Park |
Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation |
Journal of Applied Physics |
124 |
15 |
152107-1-152107-7 |
Sep. 2018 |
| 143 |
Bo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, Min Su Cho, Eunseon Yu, Jung-Hee Lee, Seongjae Cho, and In Man Kang |
Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless Transistor |
Journal of Nanoscience and Nanotechnology |
18 |
9 |
6593-6597 |
Sep. 2018 |
| 142 |
Eunseon Yu, Kun Heo, and Seongjae Cho |
Characterization and Optimization of Inverted-T FinFET Under Nanoscale Dimensions |
IEEE Transactions on Electron Devices |
65 |
8 |
3521-3527 |
Aug. 2018 |
| 141 |
Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park |
Uniformity Improvement of SiNx-Based Resistive Switching Memory by Suppressed Internal Overshoot Current |
IEEE Transactions on Nanotechnology |
17 |
4 |
824-827 |
Jul. 2018 |
| 140 |
Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Ying-Chen Chen, Yao-Feng Chang, Kyung-Chang Ryoo, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park |
Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate |
Small |
14 |
19 |
1704062-1-1704062-8 |
May 2018 |
| 139 |
Eunseon Yu, Youngmin Kim, Junsoo Lee, Yongbeom Cho, Won Jae Lee, and Seongjae Cho |
Processing and Characterization of Ultra-thin Poly-crystalline Silicon for Memory and Logic Applications |
Journal of Semiconductor Technology and Science |
18 |
2 |
172-179 |
Apr. 2018 |
| 138 |
Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho |
Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes |
IEEE Transactions on Electron Devices |
65 |
4 |
1290-1297 |
Apr. 2018 |
| 137 |
Min-Hwi Kim, Sungjun Kim, Kyung-Chang Ryoo, Seongjae Cho, and Byung-Gook Park |
Circuit-level simulation of resistive-switching random-access memory cross-point array based on a highly reliable compact model |
Journal of Computational Electronics |
17 |
1 |
273-278 |
Mar. 2018 |
| 136 |
Youngmin Kim, Min-Woo Kwon, Kyung-Chang Ryoo, Seongjae Cho, and Byung-Gook Park |
Design and Electrical Characterization of 2-T Thyristor RAM With Low Power Consumption |
IEEE Electron Device Letters |
39 |
3 |
355-358 |
Mar. 2018 |
| 135 |
Tae-Hyeon Kim, Sungjun Kim, Hyungjin Kim, Min-Hwi Kim, Suhyun Bang, Seongjae Cho, and Byung-Gook Park |
Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+ Si memory device |
Solid-State Electronics |
140 |
|
51-54 |
Feb. 2018 |
| 134 |
Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho |
SiGe Heterojunction FinFET Towards Tera-Hertz Applications |
Journal of the Korean Physical Society |
72 |
4 |
527-532 |
Feb. 2018 |
| 133 |
Yunghun Jung, Yongbeom Cho, In Man Kang, and Seongjae Cho |
Analyses on Device Performances and Short-Channel Effects of Tunneling Field-Effect Transistor Having SiGe Source Junction |
Journal of The Institute of Electronics and Information Engineers |
54 |
12 |
33-41 |
Dec. 2017 |
| 132 |
Min Su Cho, Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Chul-Ho Won, Jeong-Gil Kim, Junsoo Lee, Seongjae Cho, Jung-Hee Lee, and In Man Kang |
Electrical Performances of InN/GaN Tunneling Field-Effect Transistor |
Journal of Nanoscience and Nanotechnology |
17 |
11 |
8355-8359 |
Nov. 2017 |
Gachon University