Journal Publications

Authors Title Journal Vol. No. Page Date
151 Dong Keun Lee, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, and Byung-Gook Park Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation Solid-State Electronics 154 31-35 Apr. 2019
150 Min Su Cho, Young Jun Yoon, Seongjae Cho, and In Man Kang Design and analysis of logic inverter using antimonide-based compound semiconductor junctionless transistor Applied Physics A 125 3 173-1-173-9 Mar. 2019
149 Jae Yoon Lee, Youngmin Kim, Min-Hwi Kim, Seoyeon Go, Seung Wook Ryu, Jae Yeon Lee, Tae Jung Ha, Soo Gil Kim, Seongjae Cho, and Byung-Gook Park Ni/GeOx/p+ Si resistive-switching random-access memory with full Si processing compatibility and its characterization and modeling Vacuum 161 63-70 Mar. 2019
148 Yongbeom Cho, Jae Yoon Lee, Eunseon Yu, Jae-Hee Han, Myung-Hyun Baek, Seongjae Cho, and Byung-Gook Park Design and Characterization of Semi-Floating-Gate Synaptic Transistor Micromachines 10 1 32-41 Jan. 2019
147 Yung Hun Jung, In Man Kang, and Seongjae Cho Analysis of tunneling field-effect transistor with germanium source junction using small-signal equivalent circuit Microwave and Optical Technology Letters 60 12 2922-2926 Dec. 2018
146 Suhyun Bang, Min-Hwi Kim, Tae-Hyeon Kim, Dong Keun Lee, Sungjun Kim, Seongjae Cho, and Byung-Gook Park Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application Solid-State Electronics 150 60-65 Dec. 2018
145 Myeongsun Kim, Jongmin Ha, Ikhyeon Kwon, Jae-Hee Han, Seongjae Cho, and Il Hwan Cho A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barrier for High-Temperature Applications Micromachines 9 11 581-589 Nov. 2018
144 Min-Woo Kwon, Myung-Hyun Baek, Sungmin Hwang, Kyungchul Park, Tejin Jang, Taehyung Kim, Junil Lee, Seongjae Cho, and Byung-Gook Park Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation Journal of Applied Physics 124 15 152107-1-152107-7 Sep. 2018
143 Bo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, Min Su Cho, Eunseon Yu, Jung-Hee Lee, Seongjae Cho, and In Man Kang Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless Transistor Journal of Nanoscience and Nanotechnology 18 9 6593-6597 Sep. 2018
142 Eunseon Yu, Kun Heo, and Seongjae Cho Characterization and Optimization of Inverted-T FinFET Under Nanoscale Dimensions IEEE Transactions on Electron Devices 65 8 3521-3527 Aug. 2018
141 Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park Uniformity Improvement of SiNx-Based Resistive Switching Memory by Suppressed Internal Overshoot Current IEEE Transactions on Nanotechnology 17 4 824-827 Jul. 2018
140 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Ying-Chen Chen, Yao-Feng Chang, Kyung-Chang Ryoo, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate Small 14 19 1704062-1-1704062-8 May 2018
139 Eunseon Yu, Youngmin Kim, Junsoo Lee, Yongbeom Cho, Won Jae Lee, and Seongjae Cho Processing and Characterization of Ultra-thin Poly-crystalline Silicon for Memory and Logic Applications Journal of Semiconductor Technology and Science 18 2 172-179 Apr. 2018
138 Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes IEEE Transactions on Electron Devices 65 4 1290-1297 Apr. 2018
137 Min-Hwi Kim, Sungjun Kim, Kyung-Chang Ryoo, Seongjae Cho, and Byung-Gook Park Circuit-level simulation of resistive-switching random-access memory cross-point array based on a highly reliable compact model Journal of Computational Electronics 17 1 273-278 Mar. 2018
136 Youngmin Kim, Min-Woo Kwon, Kyung-Chang Ryoo, Seongjae Cho, and Byung-Gook Park Design and Electrical Characterization of 2-T Thyristor RAM With Low Power Consumption IEEE Electron Device Letters 39 3 355-358 Mar. 2018
135 Tae-Hyeon Kim, Sungjun Kim, Hyungjin Kim, Min-Hwi Kim, Suhyun Bang, Seongjae Cho, and Byung-Gook Park Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+ Si memory device Solid-State Electronics 140 51-54 Feb. 2018
134 Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho SiGe Heterojunction FinFET Towards Tera-Hertz Applications Journal of the Korean Physical Society 72 4 527-532 Feb. 2018
133 Yunghun Jung, Yongbeom Cho, In Man Kang, and Seongjae Cho Analyses on Device Performances and Short-Channel Effects of Tunneling Field-Effect Transistor Having SiGe Source Junction Journal of The Institute of Electronics and Information Engineers 54 12 33-41 Dec. 2017
132 Min Su Cho, Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Chul-Ho Won, Jeong-Gil Kim, Junsoo Lee, Seongjae Cho, Jung-Hee Lee, and In Man Kang Electrical Performances of InN/GaN Tunneling Field-Effect Transistor Journal of Nanoscience and Nanotechnology 17 11 8355-8359 Nov. 2017
이전페이지 1 2 3 4 5 6 7 8 9 10 다음페이지