| 229 |
Seoyeon Go, Jae Yoon Lee, Jae Yeon Lee, Soo Gil Kim, and Seongjae Cho |
Fabrication and characterization of Ni/GeOx/p+ Si ReRAM and development of its compact DC model with higher degree of model matching |
2018 IEIE Summer Conference |
215-218 |
Jeju, Korea |
Jun. 27-29, 2018 |
| 228 |
Haechang Lee, Yongbeom Cho, Yung Hun Jung, and Seongjae Cho |
Characterization of strained Si1-xGex by first-principle simulation based on modified Becke-Johnson exchange potential model |
2018 IEIE Summer Conference |
84-87 |
Jeju, Korea |
Jun. 27-29, 2018 |
| 227 |
Jae Yoon Lee, Youngmin Kim, Ikhyeon Kwon, Il Hwan Cho, Jae Yeon Lee, Soo Gil Kim, and Seongjae Cho |
Fabrication and Characterization of a Fully Si Compatible Forming-Free GeOx Resistive Switching Random-Access Memory |
76th Device Research Conference (DRC) |
153-154 |
Santa Barbara, USA |
Jun. 24-27, 2018 |
| 226 |
Yongbeom Cho, Eunseon Yu, Myung-Hyun Baek, Seongjae Cho, and Byung-Gook Park |
Semi-floating-gate (SFG) synaptic transistor capable of short- and long-term memory operations towards the hardware-driven neuromorphic system |
2018 IEEE Silicon Nanoelectronics Workshop (SNW) |
161-162 |
Honolulu, USA |
Jun. 17-18, 2018 |
| 225 |
Jae Yoon Lee, Min Hwi Kim, Yeon-Joon Choi, Jae Yeon Lee, Soo Gil Kim, Seongjae Cho, and Byung-Gook Park |
Compact modeling of fully Si-compatible forming-free Ni/GeOx/p+ Si resistive-switching random-access memory (ReRAM) |
2018 IEEE Silicon Nanoelectronics Workshop (SNW) |
55-56 |
Honolulu, USA |
Jun. 17-18, 2018 |
| 224 |
Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Improvement of HfO2-based ReRAMs Nonlinearity and Reset Current Level by Tunneling Barrier Layer Thickness Modulation |
2018 IEEE Silicon Nanoelectronics Workshop (SNW) |
53-54 |
Honolulu, USA |
Jun. 17-18, 2018 |
| 223 |
Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho |
Si Fin/Si1-xGex Shell Channel p-Type FinFET for Sub-10-nm Technology Nodes and Its High-Speed Operation |
The 25th Korean Conference on Semiconductors (KCS) |
515 |
Gangwon, Korea |
Feb. 5-7, 2018 |
| 222 |
Yung Hun Jung, In Man Kang, Wookyung Sun, Hyungsoon Shin, and Seongjae Cho |
Tunneling Field-Effect Transistor Having SiGe Source Junction and Its Small-Signal Equivalent Circuit Verification through Y-Parameter Analysis |
The 25th Korean Conference on Semiconductors (KCS) |
403 |
Gangwon, Korea |
Feb. 5-7, 2018 |
| 221 |
Yeon-Joon Choi, Sungjun Kim, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park |
Close Investigation of Electric Field Concentration Effect in the Wedge Structure through Numerical Analysis for Nanoscale ReRAM Application |
The 25th Korean Conference on Semiconductors (KCS) |
273 |
Gangwon, Korea |
Feb. 5-7, 2018 |
| 220 |
Eunseon Yu and Seongjae Cho |
Inverted-T FinFET for High-Performance Logic and Its Optimal Design |
The 25th Korean Conference on Semiconductors (KCS) |
240 |
Gangwon, Korea |
Feb. 5-7, 2018 |
| 219 |
Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Seongjae Cho, and Byung-Gook Park |
Neuromorphic Behaviors of HfO2 ReRAM by Pulse Frequency Modulation |
The 25th Korean Conference on Semiconductors (KCS) |
35 |
Gangwon, Korea |
Feb. 5-7, 2018 |
| 218 |
Jae Yoon Lee, Yung Hoon Jung, Jae Yeon Lee, Soo Gil Kim, and Seongjae Cho |
Optimization of pulse shape for suppressing current overshoot in ReRAM |
2018 International Conference on Electronics, Information, and Communication (ICEIC) |
857-860 |
Honolulu, USA |
Jan. 24-27, 2018 |
| 217 |
Seunghyun Kim, Youngmin Kim, Do-Bin Kim, Sang-Ho Lee, Seongjae Cho, and Byung-Gook Park |
Effects of charge centroid location on program characteristics in the charge-trap flash memory |
2018 International Conference on Electronics, Information, and Communication (ICEIC) |
228-230 |
Honolulu, USA |
Jan. 24-27, 2018 |
| 216 |
Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho |
Design of a novel SiGe FinFET with accurate modeling of saturation velocity and high-frequency performances |
The 10th International Conference on Advanced Materials and Devices (ICAMD) |
723 |
Jeju, Korea |
Dec. 5-8, 2017 |
| 215 |
Yongbeom Cho, Youngmin Kim, Junsoo Lee, Seongjae Cho, and Byung-Gook Park |
Nanowire TFET-Based Floating-Body Synaptic Transistor |
Europe-Korea Conference on Science and Technology (EKC) 2017 |
ICTF-07 |
Stockholm, Sweden |
Jul. 26-29, 2017 |
| 214 |
Yunghun Jung and Seongjae Cho |
Enhancement of Device Performances of SiGe Tunneling Field-Effect Transistor and Short-Channel Effects |
Europe-Korea Conference on Science and Technology (EKC) 2017 |
ICTF-06 |
Stockholm, Sweden |
Jul. 26-29, 2017 |
| 213 |
Junsoo Lee, Eunseon Yu, and Seongjae Cho |
Electrical Characterization of Alumina and Hafina Prepared by Atomic-Layer Deposition under Various Process Conditions |
2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
384-387 |
Gyeongju, Korea |
Jul. 3-5, 2017 |
| 212 |
Jae Yoon Lee, Junsoo Lee, and Seongjae Cho |
Design and Characterization of Isotype-Doped Si/Ge Heterojunction Dual-Gate Tunneling Field-Effect Transistor |
2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
360-363 |
Gyeongju, Korea |
Jul. 3-5, 2017 |
| 211 |
Junsoo Lee, Yongbeom Cho, Youngmin Kim, Eunseon Yu, and Seongjae Cho |
Processing and Characterization of Ultra-Thin Poly-Crytalline Silicon for Memory and Logic Applications |
2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
233-236 |
Gyeongju, Korea |
Jul. 3-5, 2017 |
| 210 |
Seongjae Cho and Byung-Gook Park |
[Invited] Si and novel group-IV materials and devices for advanced VLSI system |
The 32nd International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) |
SS-01-04 |
Busan, Korea |
Jul. 2-5, 2017 |
Gachon University