Conferences

Authors Title Conference Page Venue Date
228 Haechang Lee, Yongbeom Cho, Yung Hun Jung, and Seongjae Cho Characterization of strained Si1-xGex by first-principle simulation based on modified Becke-Johnson exchange potential model 2018 IEIE Summer Conference 84-87 Jeju, Korea Jun. 27-29, 2018
227 Jae Yoon Lee, Youngmin Kim, Ikhyeon Kwon, Il Hwan Cho, Jae Yeon Lee, Soo Gil Kim, and Seongjae Cho Fabrication and Characterization of a Fully Si Compatible Forming-Free GeOx Resistive Switching Random-Access Memory 76th Device Research Conference (DRC) 153-154 Santa Barbara, USA Jun. 24-27, 2018
226 Yongbeom Cho, Eunseon Yu, Myung-Hyun Baek, Seongjae Cho, and Byung-Gook Park Semi-floating-gate (SFG) synaptic transistor capable of short- and long-term memory operations towards the hardware-driven neuromorphic system 2018 IEEE Silicon Nanoelectronics Workshop (SNW) 161-162 Honolulu, USA Jun. 17-18, 2018
225 Jae Yoon Lee, Min Hwi Kim, Yeon-Joon Choi, Jae Yeon Lee, Soo Gil Kim, Seongjae Cho, and Byung-Gook Park Compact modeling of fully Si-compatible forming-free Ni/GeOx/p+ Si resistive-switching random-access memory (ReRAM) 2018 IEEE Silicon Nanoelectronics Workshop (SNW) 55-56 Honolulu, USA Jun. 17-18, 2018
224 Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, and Byung-Gook Park Improvement of HfO2-based ReRAMs Nonlinearity and Reset Current Level by Tunneling Barrier Layer Thickness Modulation 2018 IEEE Silicon Nanoelectronics Workshop (SNW) 53-54 Honolulu, USA Jun. 17-18, 2018
223 Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho Si Fin/Si1-xGex Shell Channel p-Type FinFET for Sub-10-nm Technology Nodes and Its High-Speed Operation The 25th Korean Conference on Semiconductors (KCS) 515 Gangwon, Korea Feb. 5-7, 2018
222 Yung Hun Jung, In Man Kang, Wookyung Sun, Hyungsoon Shin, and Seongjae Cho Tunneling Field-Effect Transistor Having SiGe Source Junction and Its Small-Signal Equivalent Circuit Verification through Y-Parameter Analysis The 25th Korean Conference on Semiconductors (KCS) 403 Gangwon, Korea Feb. 5-7, 2018
221 Yeon-Joon Choi, Sungjun Kim, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park Close Investigation of Electric Field Concentration Effect in the Wedge Structure through Numerical Analysis for Nanoscale ReRAM Application The 25th Korean Conference on Semiconductors (KCS) 273 Gangwon, Korea Feb. 5-7, 2018
220 Eunseon Yu and Seongjae Cho Inverted-T FinFET for High-Performance Logic and Its Optimal Design The 25th Korean Conference on Semiconductors (KCS) 240 Gangwon, Korea Feb. 5-7, 2018
219 Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Seongjae Cho, and Byung-Gook Park Neuromorphic Behaviors of HfO2 ReRAM by Pulse Frequency Modulation The 25th Korean Conference on Semiconductors (KCS) 35 Gangwon, Korea Feb. 5-7, 2018
218 Jae Yoon Lee, Yung Hoon Jung, Jae Yeon Lee, Soo Gil Kim, and Seongjae Cho Optimization of pulse shape for suppressing current overshoot in ReRAM 2018 International Conference on Electronics, Information, and Communication (ICEIC) 857-860 Honolulu, USA Jan. 24-27, 2018
217 Seunghyun Kim, Youngmin Kim, Do-Bin Kim, Sang-Ho Lee, Seongjae Cho, and Byung-Gook Park Effects of charge centroid location on program characteristics in the charge-trap flash memory 2018 International Conference on Electronics, Information, and Communication (ICEIC) 228-230 Honolulu, USA Jan. 24-27, 2018
216 Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho Design of a novel SiGe FinFET with accurate modeling of saturation velocity and high-frequency performances The 10th International Conference on Advanced Materials and Devices (ICAMD) 723 Jeju, Korea Dec. 5-8, 2017
215 Yongbeom Cho, Youngmin Kim, Junsoo Lee, Seongjae Cho, and Byung-Gook Park Nanowire TFET-Based Floating-Body Synaptic Transistor Europe-Korea Conference on Science and Technology (EKC) 2017 ICTF-07 Stockholm, Sweden Jul. 26-29, 2017
214 Yunghun Jung and Seongjae Cho Enhancement of Device Performances of SiGe Tunneling Field-Effect Transistor and Short-Channel Effects Europe-Korea Conference on Science and Technology (EKC) 2017 ICTF-06 Stockholm, Sweden Jul. 26-29, 2017
213 Junsoo Lee, Eunseon Yu, and Seongjae Cho Electrical Characterization of Alumina and Hafina Prepared by Atomic-Layer Deposition under Various Process Conditions 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 384-387 Gyeongju, Korea Jul. 3-5, 2017
212 Jae Yoon Lee, Junsoo Lee, and Seongjae Cho Design and Characterization of Isotype-Doped Si/Ge Heterojunction Dual-Gate Tunneling Field-Effect Transistor 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 360-363 Gyeongju, Korea Jul. 3-5, 2017
211 Junsoo Lee, Yongbeom Cho, Youngmin Kim, Eunseon Yu, and Seongjae Cho Processing and Characterization of Ultra-Thin Poly-Crytalline Silicon for Memory and Logic Applications 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 233-236 Gyeongju, Korea Jul. 3-5, 2017
210 Seongjae Cho and Byung-Gook Park [Invited] Si and novel group-IV materials and devices for advanced VLSI system The 32nd International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) SS-01-04 Busan, Korea Jul. 2-5, 2017
209 Min-Woo Kwon, Sungmin Hwang, Myung-Hyun Baek, Seongjae Cho, and Byung-Gook Park Dual Gate Positive Feedback Field-Effect Transistor for Low Power Analog Circuit Silicon Nanoelectronics Workshop (SNW) 2017 115-116 Kyoto, Japan Jun. 4-5, 2017
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