Conferences

Authors Title Conference Page Venue Date
195 Youngmin Kim, Yongbeom Cho, Seongjae Cho, Sang Sig Kim, and Byung-Gook Park Scaling and Sub-1-V Low-Voltage Operation Characteristics of TRAM Memory Device Based on 2-Terminal Thyristor 2016 IEIE Fall Conference 62-65 Daegu, Korea Nov. 25-26, 2016
194 Yongbeom Cho, Youngmin Kim, Seongjae Cho, Sang Sig Kim, and Byung-Gook Park Optimization of Program Operation for the Scaled 2-Terminal TRAM Memory Device 2016 IEIE Fall Conference 106-109 Daegu, Korea Nov. 25-26, 2016
193 Eunseon Yu, Seongjae Cho, and Byung-Gook Park Non-Quasi-Static Capacitance-Voltage Characteristics of Ultra-Thin-Body n-type MOSFET Device 2016 IEIE Fall Conference 129-132 Daegu, Korea Nov. 25-26, 2016
192 Yung Hun Jung, Yongbeom Cho, and Seongjae Cho Characterization of Ge1-xSnx by first-principle simulation based on modified Becke-Johnson exchange potential for device applications 2016 IEIE Fall Conference 133-136 Daegu, Korea Nov. 25-26, 2016
191 Seongjae Cho [Invited] Advanced Group-IV Materials and Devices for Next-Generation Integrated System 2016 International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 1-1-0588 Jeju, Korea Nov. 6-9, 2016
190 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Taehyeon Kim, Suhyun Bang, Seongjae Cho, and Byung-Gook Park Si3N4-Based RRAM with Flexibility of Physical Design The 29th International Microprocesses and Nanotechnology Conference (MNC) 10P-7-106L Kyoto, Japan Nov. 8-11, 2016
189 Junsoo Lee, Yongbeom Cho, and Seongjae Cho Accurate Design of Si-Compatible Tunneling Field-Effect Transistor with GeSn Source Junction by Ab Initio Calculation and Device Simulation 2016 International Conference on Solid State Devices and Materials (SSDM) PS-3-01 Tsukuba, Japan Sep. 26-29, 2016
188 Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Su Hyun Bang, Min Ju Yun, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park Dopant concentration dependent resistive switching characteristics in silicon nitride-based memory devices 20th International Vacuum Congress 459 Busan, Korea Aug. 21-26, 2016
187 Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Min Su Cho, Seongjae Cho, Jung-Hee Lee, and In Man Kang Electrical Performance of InN/GaN-based Tunneling Field-effect Transistor with Subthrethold Swing below 60 mV/decade The 14th International Nanotech Symposium & Nano-Convergence Exhibition (NANO KOREA 2016) P1068_0098 KINTEX, Korea Jul. 13-15, 2016
186 Min Su Cho, Jae Hwa Seo, Young Jun Yoon, Ra Hee Kwon, Young In Jang, Chul-Ho Won, Jeong-Gil Kim, Jung-Hee Lee, Seongjae Cho, and In Man Kang Design and Analysis of Logic Inverter Using Antimony-based Compound Semiconductor Junctionless Transistor The 14th International Nanotech Symposium & Nano-Convergence Exhibition (NANO KOREA 2016) P1601_0277 KINTEX, Korea Jul. 13-15, 2016
185 Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Seongjae Cho, and In Man Kang Effect of electric fringe-field on low-power and radio-frequency performance of sub-10 nm junctionless transistors with hetero-dieletric spacer structure The 14th International Nanotech Symposium & Nano-Convergence Exhibition (NANO KOREA 2016) P1601-0097 KINTEX, Korea Jul. 13-15, 2016
184 Seunghyun Kim, Myung-Hyun Baek, Dae Woong Kwon, Do-Bin Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Young Goan Kim, Seongjae Cho, and Byung-Gook Park Characterization of the vertical position of the trapped charge in charge-trap flash memory 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 473-476 Hakodate, Japan Jul. 4-6, 2016
183 Yongbeom Cho, Junsoo Lee, and Seongjae Cho Ab Initio Calculation of Effective Density of States of GeSn and Its Application to Evaluate the Current Drivability of Tunneling Field-Effect Transistor with GeSn Source Junction 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 458-463 Hakodate, Japan Jul. 4-6, 2016
182 Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Su Hyun Bang, Seongjae Cho, and Byung-Gook Park SiN-Based Resistive Random-Access Memory Inserting Tunnel Barrier 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 399-400 Hakodate, Japan Jul. 4-6, 2016
181 Junsoo Lee, Yongbeom Cho, Youngmin Kim, and Seongjae Cho Design and Characterization of GeSn Junctionless Tunneling FinFET 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 326-329 Hakodate, Japan Jul. 4-6, 2016
180 Eunseon Yu and Seongjae Cho Simulaton of nanowire p-type metal-oxide-semiconductor field-effect transistor (PMOSFET) having SiGe channel on Si core at different Ge fractions 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 189-192 Hakodate, Japan Jul. 4-6, 2016
179 Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Su Hyun Bang, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park Self-compliance bipolar resistive switching in Ni/Ti/SiOx/Si structure 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 163-164 Hakodate, Japan Jul. 4-6, 2016
178 Sungjoon Kim, Sungjun Kim, Seongjae Cho, and Byung-Gook Park Method for High Hole Injection into Light-Emitting Diodes by Trench Patterning and p-AlGaN Regrowth 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 146-148 Hakodate, Korea Jul. 4-6, 2016
177 Yongbeom Cho, Oleg Rubel, and Seongjae Cho First-principle study of GeSn alloys and its application to tunneling field-effect transistor The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA) B1-O-02 Jeju, Korea Jul. 3-7, 2016
176 Jeongmin Lee and Seongjae Cho Low-Temperature Growth of GeSn on Si(100) Substrate and Structural Characterization The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA) B1-O-01 Jeju, Korea Jul. 3-7, 2016
이전페이지 1 2 3 4 5 6 7 8 9 10 다음페이지