Journal Publications

Authors Title Journal Vol. No. Page Date
80 Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee, Gwan Min Yoo, Young-Woo Jo, Dong-Hyeok Son, Jung-Hee Lee, Eou-Sik Cho, Seongjae Cho, and In Man Kang Design and Analysis of Vertical-Channel Gallium Nitride (GaN) Junctionless Nanowire Transistor (JNT) Journal of Nanoscience and Nanotechnology 14 11 8130-8135 Nov. 2014
79 Young Jun Yoon, Hee-Sung Kang, Jae Hwa Seo, Young-Jo Kim, Eou-Sik Cho, Jin-Hyuk Bae, Jung-Hee Lee, Seongjae Cho, and In Man Kang Design of a Recessed-gate GaN-based MOSFET Using a Dual Gate Dielectric for High-power Applications Journal of the Korean Physical Society 65 10 1579-1584 Nov. 2014
78 Sung Yoon Kim, Jae Hwa Seo, Young Jun Yoon, Gwan Min Yoo, Young Jae Kim, Hye Rim Eun, Hye Su Kang, Jungjoon Kim, Seongjae Cho, Jung-Hee Lee, and In Man Kang Design and Analysis of Sub-10-nm Junctionless Fin-Shaped Field-Effect Transistors Journal of Semiconductor Technology and Science 14 5 508-517 Oct. 2014
77 Hee Bum Roh, Jae Hwa Seo, Young Jun Yoon, Jin-Hyuk Bae, Eou-Sik Cho, Jung-Hee Lee, Seongjae Cho, and In Man Kang Evaluation of Radio-Frequency Performance of Gate-All-Around Ge/GaAs Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation Journal of Electrical Engineering and Technology 9 6 2070-2078 Nov. 2014
76 Ki-Sik Im, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Jin Su Kim, Seongjae Cho, Jae-Hoon Lee, Sorin Cristoloveanu, Jung-Hee Lee, and In Man Kang GaN junctionless trigate field-effect transistor with deep-submicron gate length: Characterization and modeling in RF regime Japanese Journal of Applied Physics 53 11 118001-1-118001-3 Oct. 2014
75 Xiaochi Chen, Yijie Huo, Seongjae Cho, Byung-Gook Park, and James S. Harris, Jr. Surface Treatment of Ge Grown Epitaxially on Si by Ex-Situ Annealing for Optical Computing by Ge Technology IEIE Transactions on Smart Processing and Computing 3 5 331-337 Oct. 2014
74 Jeong Min Lee, Jung-Hun Lee, Jae-Hee Han, Ji-Beom Yoo, Jong-Ho Lee, Seongjae Cho, Sang Jik Kwon, and Eou Sik Cho Nd:YVO4 laser ablation of graphene films on glass and poly(ethylene terephthalate) substrates Japanese Journal of Applied Physics 53 8S3 08NL02-1-08NL02-5 Aug. 2014
73 Sung Yun Woo, Young Jun Yoon, Jae Hwa Seo, Gwan Min Yoo, Seongjae Cho, and In Man Kang InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate IEICE Transactions on Electron Devices E97-C 7 677-682 Jul. 2014
72 Seung Wook Ryu, Seongjae Cho, Joonsuk Park, Jungsuk Kwac, Hyeong Joon Kim, and Yoshio Nishi Effects of ZrO2 doping on HfO2 resistive switching memory characteristics Applied Physics Letters 105 7 072102-1-072102-4 Aug. 2014
71 Seongjae Cho, Junsuk Park, Hyungjin Kim, Robert Sinclair, Byung-Gook Park, and James S. Harris, Jr. Effects of germanium incorporation on optical performances of silicon germanium passive devices for group-IV photonic integrated circuits Photonics and Nanostructures - Fundamentals and Applications 12 1 54-68 Feb. 2014
70 Young Jun Yoon, Jae Hwa Seo, Hee-Sung Kang, Young-Jo Kim, Jin-Hyuk Bae, Eou-Sik Cho, Jung-Hee Lee, Seongjae Cho, and In Man Kang Effect of spacer dielectrics on performances characteristics of Ge-based tunneling field-effect transistors Japanese Journal of Applied Physics 53 6 06JE05-1-06JE05-5 Jun. 2014
69 Seongjae Cho, Sunghun Jung, Sungjun Kim, and Byung-Gook Park Vertical stack array of one-time programmable nonvolatile memory based on pn-junction diode and its operation scheme for faster access IEICE Electronics Express 11 4 1-10 Feb. 2014
68 Seongjae Cho, In Man Kang, Kyung Rok Kim, Byung-Gook Park, and James S. Harris, Jr. Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application Applied Physics Letters 103 22 222102-1-222102-4 Dec. 2013
67 Sung Yun Woo, Young Jun Yoon, Seongjae Cho, Jung-Hee Lee, and In Man Kang Analysis of RF Parameters of Nanoscale Tunneling Field-Effect Transistor Based on InAs/InGaAs/InP Heterojunctions Journal of Nanoscience ad Nanotechnology 13 12 8133-8136 Dec. 2013
66 Kyung Rok Kim, Young Jun Yoon, Seongjae Cho, Jae Hwa Seo, Jung-Hee Lee, Jin-Hyuk Bae, Eou-Sik Cho, and In Man Kang InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 V Current Applied Physics 13 9 2051-2054 Nov. 2013
65 Jae Hwa Seo, Seongjae Cho, and In Man Kang Simulation for silicon-compatible InGaAs-based junctionless field-effect transistor using InP buffer layer Semiconductor Science and Technology 28 10 105007-1-105007-6 Oct. 2013
64 Seongjae Cho, In Man Kang, and Kyung Rok Kim More Accurate and Reliable Extraction of Tunneling Resistance in Tunneling FET and Verification in Small-Signal Circuit Operation IEEE Transactions on Electron Devices 60 10 3318-3324 Oct. 2013
63 Jae Sung Lee, Jae Hwa Seo, Seongjae Cho, Jung-Hee Lee, Shin-Won Kang, Jin-Hyuk Bae, Eou-Sik Cho, and In Man Kang Simulation Study on Effect of Drain Underlap in Gate-All-Around Tunneling Field-Effect Transistors Current Applied Physics 13 6 1143-1149 Aug. 2013
62 Yung Jun Yoon, Seongjae Cho, Jae Hwa Seo, In Man Kang, Byung-Gook Park, and Jung-Hee Lee Compound Semiconductor Tunneling Field-Effect Transistor Based on Ge/GaAs Heterojunction with Tunneling-Boost Layer for High-Performance Operation Japanese Journal of Applied Physics 52 4 04CC04-1-04CC04-5 Apr. 2013
61 Kyung Rok Kim, Sunhae Shin, Seongjae Cho, Jung-Hee Lee, and In Man Kang Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors Based on Radio-Frequency Analysis Japanese Journal of Applied Physics 52 4 04CC14-1-04CC14-4 Apr. 2013
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