Journal Publications

Authors Title Journal Vol. No. Page Date
86 Hana Sim, Jeongmin Lee, Seongjae Cho, Eou-Sik Cho, and Sang Jik Kwon A Study on Band Structure of ZnO/CdS Heterojunction for CIGS Solar-Cell Applications Journal of Semiconductor Technology and Science 15 2 267-275 Apr. 2015
85 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications Applied Physics Letters 106 21 212106-1-212106-4 May 2015
84 Jeongmin Lee, Jae-Hee Han, Jung-Hun Lee, Ji-Beom Yoo, Seongjae Cho, Sang Jik Kwon, and Eou Sik Cho Ablation of Graphene Film by Direct Nd:YVO4 Laser under Various Beaming Conditions Journal of Nanoscience and Nanotechnology 14 12 9060-9064 Dec. 2014
83 Hwan Gi Lee, Jae Hwa Seo, Young Jun Yoon, Young Jae Kim, Jungjoon Kim, Seongjae Cho, Eou-Sik Cho, Jin-Hyuk Bae, Jung-Hee Lee, and In Man Kang Fabrication and Characterization of GaN-based Light-Emitting Diode (LED) with Triangle-type Structure Molecular Crystals and Liquid Crystals 599 1 163-169 Nov. 2014
82 Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee, Gwan Min Yoo, Eou-Sik Cho, Seongjae Cho, Jung-Hee Lee, and In Man Kang A Reliable Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) Based on Radio-Frequency Analysis Journal of Nanoscience and Nanotechnology 14 11 8219-8224 Nov. 2014
81 Young Jun Yoon, Jaw Hwa Seo, Eou-Sik Cho, Jung-Hee Lee, Jin-Hyuk Bae, Seongjae Cho, and In Man Kang Heteromaterial Gate Tunneling Field-Effect Transistor for High-Speed and Radio-Frequency Applications Journal of Nanoscience and Nanotechnology 14 11 8136-8140 Nov. 2014
80 Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee, Gwan Min Yoo, Young-Woo Jo, Dong-Hyeok Son, Jung-Hee Lee, Eou-Sik Cho, Seongjae Cho, and In Man Kang Design and Analysis of Vertical-Channel Gallium Nitride (GaN) Junctionless Nanowire Transistor (JNT) Journal of Nanoscience and Nanotechnology 14 11 8130-8135 Nov. 2014
79 Young Jun Yoon, Hee-Sung Kang, Jae Hwa Seo, Young-Jo Kim, Eou-Sik Cho, Jin-Hyuk Bae, Jung-Hee Lee, Seongjae Cho, and In Man Kang Design of a Recessed-gate GaN-based MOSFET Using a Dual Gate Dielectric for High-power Applications Journal of the Korean Physical Society 65 10 1579-1584 Nov. 2014
78 Sung Yoon Kim, Jae Hwa Seo, Young Jun Yoon, Gwan Min Yoo, Young Jae Kim, Hye Rim Eun, Hye Su Kang, Jungjoon Kim, Seongjae Cho, Jung-Hee Lee, and In Man Kang Design and Analysis of Sub-10-nm Junctionless Fin-Shaped Field-Effect Transistors Journal of Semiconductor Technology and Science 14 5 508-517 Oct. 2014
77 Hee Bum Roh, Jae Hwa Seo, Young Jun Yoon, Jin-Hyuk Bae, Eou-Sik Cho, Jung-Hee Lee, Seongjae Cho, and In Man Kang Evaluation of Radio-Frequency Performance of Gate-All-Around Ge/GaAs Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation Journal of Electrical Engineering and Technology 9 6 2070-2078 Nov. 2014
76 Ki-Sik Im, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Jin Su Kim, Seongjae Cho, Jae-Hoon Lee, Sorin Cristoloveanu, Jung-Hee Lee, and In Man Kang GaN junctionless trigate field-effect transistor with deep-submicron gate length: Characterization and modeling in RF regime Japanese Journal of Applied Physics 53 11 118001-1-118001-3 Oct. 2014
75 Xiaochi Chen, Yijie Huo, Seongjae Cho, Byung-Gook Park, and James S. Harris, Jr. Surface Treatment of Ge Grown Epitaxially on Si by Ex-Situ Annealing for Optical Computing by Ge Technology IEIE Transactions on Smart Processing and Computing 3 5 331-337 Oct. 2014
74 Jeong Min Lee, Jung-Hun Lee, Jae-Hee Han, Ji-Beom Yoo, Jong-Ho Lee, Seongjae Cho, Sang Jik Kwon, and Eou Sik Cho Nd:YVO4 laser ablation of graphene films on glass and poly(ethylene terephthalate) substrates Japanese Journal of Applied Physics 53 8S3 08NL02-1-08NL02-5 Aug. 2014
73 Sung Yun Woo, Young Jun Yoon, Jae Hwa Seo, Gwan Min Yoo, Seongjae Cho, and In Man Kang InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate IEICE Transactions on Electron Devices E97-C 7 677-682 Jul. 2014
72 Seung Wook Ryu, Seongjae Cho, Joonsuk Park, Jungsuk Kwac, Hyeong Joon Kim, and Yoshio Nishi Effects of ZrO2 doping on HfO2 resistive switching memory characteristics Applied Physics Letters 105 7 072102-1-072102-4 Aug. 2014
71 Seongjae Cho, Junsuk Park, Hyungjin Kim, Robert Sinclair, Byung-Gook Park, and James S. Harris, Jr. Effects of germanium incorporation on optical performances of silicon germanium passive devices for group-IV photonic integrated circuits Photonics and Nanostructures - Fundamentals and Applications 12 1 54-68 Feb. 2014
70 Young Jun Yoon, Jae Hwa Seo, Hee-Sung Kang, Young-Jo Kim, Jin-Hyuk Bae, Eou-Sik Cho, Jung-Hee Lee, Seongjae Cho, and In Man Kang Effect of spacer dielectrics on performances characteristics of Ge-based tunneling field-effect transistors Japanese Journal of Applied Physics 53 6 06JE05-1-06JE05-5 Jun. 2014
69 Seongjae Cho, Sunghun Jung, Sungjun Kim, and Byung-Gook Park Vertical stack array of one-time programmable nonvolatile memory based on pn-junction diode and its operation scheme for faster access IEICE Electronics Express 11 4 1-10 Feb. 2014
68 Seongjae Cho, In Man Kang, Kyung Rok Kim, Byung-Gook Park, and James S. Harris, Jr. Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application Applied Physics Letters 103 22 222102-1-222102-4 Dec. 2013
67 Sung Yun Woo, Young Jun Yoon, Seongjae Cho, Jung-Hee Lee, and In Man Kang Analysis of RF Parameters of Nanoscale Tunneling Field-Effect Transistor Based on InAs/InGaAs/InP Heterojunctions Journal of Nanoscience ad Nanotechnology 13 12 8133-8136 Dec. 2013
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