| 80 |
Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee, Gwan Min Yoo, Young-Woo Jo, Dong-Hyeok Son, Jung-Hee Lee, Eou-Sik Cho, Seongjae Cho, and In Man Kang |
Design and Analysis of Vertical-Channel Gallium Nitride (GaN) Junctionless Nanowire Transistor (JNT) |
Journal of Nanoscience and Nanotechnology |
14 |
11 |
8130-8135 |
Nov. 2014 |
| 79 |
Young Jun Yoon, Hee-Sung Kang, Jae Hwa Seo, Young-Jo Kim, Eou-Sik Cho, Jin-Hyuk Bae, Jung-Hee Lee, Seongjae Cho, and In Man Kang |
Design of a Recessed-gate GaN-based MOSFET Using a Dual Gate Dielectric for High-power Applications |
Journal of the Korean Physical Society |
65 |
10 |
1579-1584 |
Nov. 2014 |
| 78 |
Sung Yoon Kim, Jae Hwa Seo, Young Jun Yoon, Gwan Min Yoo, Young Jae Kim, Hye Rim Eun, Hye Su Kang, Jungjoon Kim, Seongjae Cho, Jung-Hee Lee, and In Man Kang |
Design and Analysis of Sub-10-nm Junctionless Fin-Shaped Field-Effect Transistors |
Journal of Semiconductor Technology and Science |
14 |
5 |
508-517 |
Oct. 2014 |
| 77 |
Hee Bum Roh, Jae Hwa Seo, Young Jun Yoon, Jin-Hyuk Bae, Eou-Sik Cho, Jung-Hee Lee, Seongjae Cho, and In Man Kang |
Evaluation of Radio-Frequency Performance of Gate-All-Around Ge/GaAs Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation |
Journal of Electrical Engineering and Technology |
9 |
6 |
2070-2078 |
Nov. 2014 |
| 76 |
Ki-Sik Im, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Jin Su Kim, Seongjae Cho, Jae-Hoon Lee, Sorin Cristoloveanu, Jung-Hee Lee, and In Man Kang |
GaN junctionless trigate field-effect transistor with deep-submicron gate length: Characterization and modeling in RF regime |
Japanese Journal of Applied Physics |
53 |
11 |
118001-1-118001-3 |
Oct. 2014 |
| 75 |
Xiaochi Chen, Yijie Huo, Seongjae Cho, Byung-Gook Park, and James S. Harris, Jr. |
Surface Treatment of Ge Grown Epitaxially on Si by Ex-Situ Annealing for Optical Computing by Ge Technology |
IEIE Transactions on Smart Processing and Computing |
3 |
5 |
331-337 |
Oct. 2014 |
| 74 |
Jeong Min Lee, Jung-Hun Lee, Jae-Hee Han, Ji-Beom Yoo, Jong-Ho Lee, Seongjae Cho, Sang Jik Kwon, and Eou Sik Cho |
Nd:YVO4 laser ablation of graphene films on glass and poly(ethylene terephthalate) substrates |
Japanese Journal of Applied Physics |
53 |
8S3 |
08NL02-1-08NL02-5 |
Aug. 2014 |
| 73 |
Sung Yun Woo, Young Jun Yoon, Jae Hwa Seo, Gwan Min Yoo, Seongjae Cho, and In Man Kang |
InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate |
IEICE Transactions on Electron Devices |
E97-C |
7 |
677-682 |
Jul. 2014 |
| 72 |
Seung Wook Ryu, Seongjae Cho, Joonsuk Park, Jungsuk Kwac, Hyeong Joon Kim, and Yoshio Nishi |
Effects of ZrO2 doping on HfO2 resistive switching memory characteristics |
Applied Physics Letters |
105 |
7 |
072102-1-072102-4 |
Aug. 2014 |
| 71 |
Seongjae Cho, Junsuk Park, Hyungjin Kim, Robert Sinclair, Byung-Gook Park, and James S. Harris, Jr. |
Effects of germanium incorporation on optical performances of silicon germanium passive devices for group-IV photonic integrated circuits |
Photonics and Nanostructures - Fundamentals and Applications |
12 |
1 |
54-68 |
Feb. 2014 |
| 70 |
Young Jun Yoon, Jae Hwa Seo, Hee-Sung Kang, Young-Jo Kim, Jin-Hyuk Bae, Eou-Sik Cho, Jung-Hee Lee, Seongjae Cho, and In Man Kang |
Effect of spacer dielectrics on performances characteristics of Ge-based tunneling field-effect transistors |
Japanese Journal of Applied Physics |
53 |
6 |
06JE05-1-06JE05-5 |
Jun. 2014 |
| 69 |
Seongjae Cho, Sunghun Jung, Sungjun Kim, and Byung-Gook Park |
Vertical stack array of one-time programmable nonvolatile memory based on pn-junction diode and its operation scheme for faster access |
IEICE Electronics Express |
11 |
4 |
1-10 |
Feb. 2014 |
| 68 |
Seongjae Cho, In Man Kang, Kyung Rok Kim, Byung-Gook Park, and James S. Harris, Jr. |
Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application |
Applied Physics Letters |
103 |
22 |
222102-1-222102-4 |
Dec. 2013 |
| 67 |
Sung Yun Woo, Young Jun Yoon, Seongjae Cho, Jung-Hee Lee, and In Man Kang |
Analysis of RF Parameters of Nanoscale Tunneling Field-Effect Transistor Based on InAs/InGaAs/InP Heterojunctions |
Journal of Nanoscience ad Nanotechnology |
13 |
12 |
8133-8136 |
Dec. 2013 |
| 66 |
Kyung Rok Kim, Young Jun Yoon, Seongjae Cho, Jae Hwa Seo, Jung-Hee Lee, Jin-Hyuk Bae, Eou-Sik Cho, and In Man Kang |
InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 V |
Current Applied Physics |
13 |
9 |
2051-2054 |
Nov. 2013 |
| 65 |
Jae Hwa Seo, Seongjae Cho, and In Man Kang |
Simulation for silicon-compatible InGaAs-based junctionless field-effect transistor using InP buffer layer |
Semiconductor Science and Technology |
28 |
10 |
105007-1-105007-6 |
Oct. 2013 |
| 64 |
Seongjae Cho, In Man Kang, and Kyung Rok Kim |
More Accurate and Reliable Extraction of Tunneling Resistance in Tunneling FET and Verification in Small-Signal Circuit Operation |
IEEE Transactions on Electron Devices |
60 |
10 |
3318-3324 |
Oct. 2013 |
| 63 |
Jae Sung Lee, Jae Hwa Seo, Seongjae Cho, Jung-Hee Lee, Shin-Won Kang, Jin-Hyuk Bae, Eou-Sik Cho, and In Man Kang |
Simulation Study on Effect of Drain Underlap in Gate-All-Around Tunneling Field-Effect Transistors |
Current Applied Physics |
13 |
6 |
1143-1149 |
Aug. 2013 |
| 62 |
Yung Jun Yoon, Seongjae Cho, Jae Hwa Seo, In Man Kang, Byung-Gook Park, and Jung-Hee Lee |
Compound Semiconductor Tunneling Field-Effect Transistor Based on Ge/GaAs Heterojunction with Tunneling-Boost Layer for High-Performance Operation |
Japanese Journal of Applied Physics |
52 |
4 |
04CC04-1-04CC04-5 |
Apr. 2013 |
| 61 |
Kyung Rok Kim, Sunhae Shin, Seongjae Cho, Jung-Hee Lee, and In Man Kang |
Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors Based on Radio-Frequency Analysis |
Japanese Journal of Applied Physics |
52 |
4 |
04CC14-1-04CC14-4 |
Apr. 2013 |
Gachon University