Journal Publications

Authors Title Journal Vol. No. Page Date
131 Bo Gyeong Kim, Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Min Su Cho, Jung-Hee Lee, Seongjae Cho, and In Man Kang Electrical Characteristics of Tunneling FIeld-Effect Transistors using Vertical Tunneling Operation Based on AlGaSb/InGaAs Journal of Electrical Engineering and Technology 12 6 2324-2332 Nov. 2017
130 Eunseon Yu, Seung Wook Ryu, Henry H. Radamson, and Seongjae Cho Structural and Optical Characteristics of Epitaxially Grown SiGe on Si for Electronic and Photonic Device Applications Journal of Nanoelectronics and Optoelectronics 12 10 1129-1133 Oct. 2017
129 Yongbeom Cho, Seongjae Cho, Byung-Gook Park, and James S. Harris, Jr. First-principle Study for More Accurate Optical and Electrical Characterization of Ge1-xSnx Alloy for Si and Group-IV Device Applications Journal of Semiconductor Technology and Science 17 5 675-684 Oct. 2017
128 Seunghyun Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Seongjae Cho, and Byung-Gook Park Investigation of Retention Characteristics Caused by Charge Loss for Charge Trap NAND Flash Memory Journal of Semiconductor Technology and Science 17 5 584-590 Oct. 2017
127 Tae-Hyeon Kim, Sungjun Kim, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park Design and Analysis for 3D Vertical Resistive Random Access Memory Structures with Silicon Bottom Electrodes Journal of Nanoscience and Nanotechnology 17 10 7160-7163 Oct. 2017
126 Eunseon Yu, Seongjae Cho, and Byung-Gook Park An accurate simulation study on capacitance-voltage characteristics of metal-oxide-semiconductor field-effect transistors in novel structures Physica B: Condensed Matter 521 305-311 Sep. 2017
125 Yongbeom Cho, Eunseon Yu, and Seongjae Cho Design of a High-Hole-Mobility Ge Transistor for Si-Driven Heterogeneous Integrated Circuits IDEC Journal of Integrated Circuits and Systems 3 3 13-19 Jul. 2017
124 Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory Solid-State Electronics 132 109-114 Jun. 2017
123 Seunghyun Kim, Dae Woong Kwon, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Hyungmin Kim, Young Goan Kim, Seongjae Cho, and Byung-Gook Park Characterization of the Vertical Position of the Trapped Charge in Charge-Trap Flash Memory Journal of Semiconductor Technology and Science 17 2 167-172 Apr. 2017
122 Youngmin Kim, Eunseon Yu, Junsoo Lee, and Seongjae Cho Nonvolatile Memory Materials/Devices Technologies Bulletin of the Korean Institute of Electrical and Electronic Material Engineers 30 3 31-43 Mar. 2017
121 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Seongjae Cho, and Byung-Gook Park Nano-cone resistive memory for ultralow power operation Nanotechnology 28 12 125207-1-125207-7 Mar. 2017
120 Sungjoon Kim, Seongjae Cho, Jaedeok Jeong, Sungjun Kim, Sungmin Hwang, Garam Kim, Sukho Yoon, and Byung-Gook Park InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation Optics Express 25 6 6440-6449 Mar. 2017
119 Seunghyun Kim, Sang-Ho Lee, Young-Goan Kim, Seongjae Cho, and Byung-Gook Park Highly compact and accurate circuit-level macro modeling of gate-all-around charge-trap flash memory Japanese Journal of Applied Physics 56 1 014302-1-014302-5 Jan. 2017
118 Junsoo Lee, Youngmin Kim, and Seongjae Cho Design of Poly-Si Junctionless Fin-Channel FET With Quantum-Mechanical Drift-Diffusion Models for Sub-10-nm Technology Nodes IEEE Transactions on Electron Devices 63 12 4610-4616 Dec. 2016
117 Youngmin Kim, Junsoo Lee, and Seongjae Cho Si CMOS Extension and Ge Technology Perspectives Forecast Through Metal-oxide-semiconductor Junctionless Field-Effect Transistor Journal of Semiconductor Technology and Science 16 6 847-853 Dec. 2016
116 Jeongmin Lee, Il Hwan Cho, Dongsun Seo, Seongjae Cho, and Byung-Gook Park Crystallization and Characterization of GeSn Deposited on Si with Ge Buffer Layer by Low-temperature Sputter Epitaxy Journal of Semiconductor Technology and Science 16 6 854-859 Dec. 2016
115 Eunseon Yu and Seongjae Cho Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel Japanese Journal of Applied Physics 55 11 114001-1-114001-8 Nov. 2016
114 Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Seongjae Cho, and Byung-Gook Park Dopant concentration dependent resistive switching characteristics in Cu/SiNx/Si structure Journal of Alloys and Compounds 686 479-483 Nov. 2016
113 Jae Hwa Seo, Young Jun Yoon, Young-Woo Jo, Dong-Hyeok Son, Seongjae Cho, Hyuck-In Kwon, Jung-Hee Lee, and In Man Kang Design Optimization of InAs-Based Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (TFET) Journal of Nanoscience and Nanotechnology 16 10 10199-10203 Oct. 2016
112 Sungjun Kim, Seongjae Cho, and Byung-Gook Park Sub-100-nA-Operating Si-Compatible Ni/Ti/HfO2/SiO2/Si RRAM Device for High-Density Integration and Low-Power Applications Journal of Nanoscience and Nanotechnology 16 10 10247-10251 Oct. 2016
이전페이지 1 2 3 4 5 6 7 8 9 10 다음페이지