Conferences

Authors Title Conference Page Venue Date
169 Seunghyun Kim, Min-Hwi Kim, Sang-Ho Lee, Youngmin Kim, Hyung-Min Kim, Young Goan Kim, Seongjae Cho, and Byung-Gook Park Highly accurate circuit-level macro modeling of charge-trap flash memory The 23rd Korean Conference on Semiconductors (KCS) 83 Jeongsun, Korea Feb. 22-24, 2016
168 Min-Hwi Kim, Sungjun Kim, Sunghun Jung, Seongjae Cho, and Byung-Gook Park Circuit-level simulation of RRAM cross-point array based on a reliable device-level compact modeling The 23rd Korean Conference on Semiconductors (KCS) 50 Jeongsun, Korea Feb. 22-24, 2016
167 Youngmin Kim and Seongjae Cho Si CMOS extension and Ge technology perspectives forecase through metal-oxide-semiconductor junctionless field-effect transistor The 23rd Korean Conference on Semiconductors (KCS) 49 Jeongsun, Korea Feb. 22-24, 2016
166 Junsoo Lee, Youngmin Kim, and Seongjae Cho Optimal design of 10-nm junctionless field-effect transistor with poly-Si channel in consideration of quantum-mechanical drift-diffusion models The 23rd Korean Conference on Semiconductors (KCS) 19 Jeongsun, Korea Feb. 22-24, 2016
165 Eunseon Yu, Mina Yun, and Seongjae Cho Nanowire PMOSFET having Si core and ultra-thin Ge peripheral channel The 23rd Korean Conference on Semiconductors (KCS) 20 Jeongsun, Korea Feb. 22-24, 2016
164 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Min Ju Kim, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park Comparison of forming voltage in oxide-based resistive switching memories International Conference on Electronics, Information, and Communication (ICEIC) 2016 747-748 Danang, Vietnam Jan. 27-30, 2016
163 Sungjun Kim, Su Hyun Bang, Tae-Hyeon Kim, Min Ju Yun, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park Conduction Mechanism in Resistive Switching Memory Cells Using HfO2 film The 9th International Conference on Advanced Materials and Devices (ICAMD) Po-Na15-051 Jeju, Korea Dec. 7-9, 2015
162 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Min Ju Yun, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park Investigation on Reliability of Ni/Si3N4/SiO2/Si RRAM Device The 9th International Conference on Advanced Materials and Devices (ICAMD) Po-Na15-015 Jeju, Korea Dec. 7-9, 2015
161 Mina Yun and Seongjae Cho Process Modeling and Device Application of Germanium Condensation 2015 IEIE Fall Conference 89-92 Wonju, Korea Nov. 27-28, 2015
160 Sungjun Kim, Sunghun Jung, Hyungjin Kim, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Min Ju Yun, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park SiO2-Based Resistive-Switching Random-Access Memory 2015 IEIE Fall Conference 86-88 Wonju, Korea Nov. 27-28, 2015
159 Jun-Soo Lee, Youngmin Kim, and Seongjae Cho Design of 10-nm-Level Junctionless Field-Effect Transistor with Poly-Si Channel under Quantum Mechanical Effects in Drift and Diffusion 2015 IEIE Fall Conference 37-40 Wonju, Korea Nov. 27-28, 2015
158 Sungjoon Kim, Sungjun Kim, Seongjae Cho, Garam Kim, and Byung-Gook Park Optimization of current injection for high-power light-emitting diode (LED) by novel contact structuring International Microprocesses and Nanotechnology Conference (MNC) 2015 13P-11-27 Toyama, Japan Nov. 10-13, 2015
157 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park Nitride-Based RRAM Devices for Various Applications The 30th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 240-241 Seoul, Korea Jun. 29 - Jul. 2, 2015
156 Kyung-Chang Ryoo, Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park Structural Effects on Unipolar Resistive Switching Behaviors in Oxide-Based RRAM for High-Density and Low-Power Applications The 30th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 235-236 Seoul, Korea Jun. 29 - Jul. 2, 2015
155 Mina Yun, Seongjae Cho, Saekyoung Kang, Sunghun Jung, and Byung-Gook Park Ge-on-Si Photodetector with Novel Metallization Schemes for On-Chip Optical Interconnect 2015 The 19th IEEE International Symposium on Consumer Electronics (ISCE) 1-2 Madrid, Spain Jun. 24-26, 2015
154 Youngmin Kim, Junsoo Lee, Yongbeom Cho, and Seongjae Cho A junctionless field-effect transistor with an ultra-thin poly-Si channel for sub-10-nm technology node 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 366-369 Jeju, Korea Jun. 29 - Jul. 1, 2015
153 Jeongmin Lee and Seongjae Cho Characterization of Ge thin film deposited directly on Si by low-thermal-budget processing 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 189-192 Jeju, Korea Jun. 29 - Jul. 1, 2015
152 Young Jun Yoon, Jae Hwa Seo, Jin Su Kim, Young Jae Kim, Sung Yoon Kim, Hye Rim Eun, Hye Su Kang, Young In Jang, Ra Hee Kwon, Seongjae Cho, Hyuck-In Kwon, Jung-Hee Lee, and In Man Kang Sub-10 nm Ge/GaAs Heterojunction-based Tunneling Field-Effect Transistor with Vertical Tunneling Operation 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 112-125 Jeju, Korea Jun. 29 - Jul. 1, 2015
151 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park Effects of bottom electrode on Ag-based electrochemical metallization memory devices 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 80-82 Jeju, Korea Jun. 29 - Jul. 1, 2015
150 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park Bias polarity dependent resistive switching behavior in silicon nitride-based memory cells 2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 73-75 Jeju, Korea Jun. 29 - Jul. 1, 2015
이전페이지 1 2 3 4 5 6 7 8 9 10 다음페이지