Conferences

Authors Title Conference Page Venue Date
220 Eunseon Yu and Seongjae Cho Inverted-T FinFET for High-Performance Logic and Its Optimal Design The 25th Korean Conference on Semiconductors (KCS) 240 Gangwon, Korea Feb. 5-7, 2018
219 Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Seongjae Cho, and Byung-Gook Park Neuromorphic Behaviors of HfO2 ReRAM by Pulse Frequency Modulation The 25th Korean Conference on Semiconductors (KCS) 35 Gangwon, Korea Feb. 5-7, 2018
218 Jae Yoon Lee, Yung Hoon Jung, Jae Yeon Lee, Soo Gil Kim, and Seongjae Cho Optimization of pulse shape for suppressing current overshoot in ReRAM 2018 International Conference on Electronics, Information, and Communication (ICEIC) 857-860 Honolulu, USA Jan. 24-27, 2018
217 Seunghyun Kim, Youngmin Kim, Do-Bin Kim, Sang-Ho Lee, Seongjae Cho, and Byung-Gook Park Effects of charge centroid location on program characteristics in the charge-trap flash memory 2018 International Conference on Electronics, Information, and Communication (ICEIC) 228-230 Honolulu, USA Jan. 24-27, 2018
216 Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho Design of a novel SiGe FinFET with accurate modeling of saturation velocity and high-frequency performances The 10th International Conference on Advanced Materials and Devices (ICAMD) 723 Jeju, Korea Dec. 5-8, 2017
215 Yongbeom Cho, Youngmin Kim, Junsoo Lee, Seongjae Cho, and Byung-Gook Park Nanowire TFET-Based Floating-Body Synaptic Transistor Europe-Korea Conference on Science and Technology (EKC) 2017 ICTF-07 Stockholm, Sweden Jul. 26-29, 2017
214 Yunghun Jung and Seongjae Cho Enhancement of Device Performances of SiGe Tunneling Field-Effect Transistor and Short-Channel Effects Europe-Korea Conference on Science and Technology (EKC) 2017 ICTF-06 Stockholm, Sweden Jul. 26-29, 2017
213 Junsoo Lee, Eunseon Yu, and Seongjae Cho Electrical Characterization of Alumina and Hafina Prepared by Atomic-Layer Deposition under Various Process Conditions 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 384-387 Gyeongju, Korea Jul. 3-5, 2017
212 Jae Yoon Lee, Junsoo Lee, and Seongjae Cho Design and Characterization of Isotype-Doped Si/Ge Heterojunction Dual-Gate Tunneling Field-Effect Transistor 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 360-363 Gyeongju, Korea Jul. 3-5, 2017
211 Junsoo Lee, Yongbeom Cho, Youngmin Kim, Eunseon Yu, and Seongjae Cho Processing and Characterization of Ultra-Thin Poly-Crytalline Silicon for Memory and Logic Applications 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 233-236 Gyeongju, Korea Jul. 3-5, 2017
210 Seongjae Cho and Byung-Gook Park [Invited] Si and novel group-IV materials and devices for advanced VLSI system The 32nd International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) SS-01-04 Busan, Korea Jul. 2-5, 2017
209 Min-Woo Kwon, Sungmin Hwang, Myung-Hyun Baek, Seongjae Cho, and Byung-Gook Park Dual Gate Positive Feedback Field-Effect Transistor for Low Power Analog Circuit Silicon Nanoelectronics Workshop (SNW) 2017 115-116 Kyoto, Japan Jun. 4-5, 2017
208 Seunghyun Kim, Do-Bin Kim, Eunseon Yu, Sang-Ho Lee, Seongjae Cho, and Byung-Gook Park Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory Silicon Nanoelectronics Workshop (SNW) 2017 79-80 Kyoto, Japan Jun. 4-5, 2017
207 Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park Uniformity Improvement of SiNx-based Resistive Switching Memory by Suppressed Internal Overshoot Current Silicon Nanoelectronics Workshop (SNW) 2017 19-20 Kyoto, Japan Jun. 4-5, 2017
206 Yung Hun Jung, Yongbeom Cho, Youngmin Kim, Junsoo Lee, Eunseon Yu, and Seongjae Cho High-Frequency Characteristics of Tunneling Field-Effect Transistor Having Multi-Gate Structure 2017 IEIE Joint Conference on Microwave and Wave Propagation 47 Seoul, Korea May 19, 2017
205 Eunseon Yu, Junsoo Lee, and Seongjae Cho Ultra-Thin SiGe Channel FinFET for Sub-10-nm Technology Nodes The 24th Korean Conference on Semiconductors (KCS) 191 Hongcheon, Korea Feb. 13-15, 2017
204 Sungjun Kim, Tae-Hyeon Kim, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park Self-compliance bipolar resistive switching in SiN-based RRAM with MIS structure The 24th Korean Conference on Semiconductors (KCS) 190 Hongcheon, Korea Feb. 13-15, 2017
203 Sungjun Kim, Min-Hwi Kim, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park Improved Controllability of Conductance by Inserting Al2O3 in SiN-based Resistive Switching Memory The 24th Korean Conference on Semiconductors (KCS) 109 Hongcheon, Korea Feb. 13-15, 2017
202 Yongbeom Cho and Seongjae Cho Study on Material Properties of Tensile-Strained Ge and Sn-Incorporated Ge through First-Principle Simulation for Advanced Si CMOS Technology The 24th Korean Conference on Semiconductors (KCS) 93 Hongcheon, Korea Feb. 13-15, 2017
201 Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park Fabrication and Resistive Switching Characteristics of Silicon Nano-wedge Structure RRAM The 24th Korean Conference on Semiconductors (KCS) 51 Hongcheon, Korea Feb. 13-15, 2017
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