| 220 |
Eunseon Yu and Seongjae Cho |
Inverted-T FinFET for High-Performance Logic and Its Optimal Design |
The 25th Korean Conference on Semiconductors (KCS) |
240 |
Gangwon, Korea |
Feb. 5-7, 2018 |
| 219 |
Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Seongjae Cho, and Byung-Gook Park |
Neuromorphic Behaviors of HfO2 ReRAM by Pulse Frequency Modulation |
The 25th Korean Conference on Semiconductors (KCS) |
35 |
Gangwon, Korea |
Feb. 5-7, 2018 |
| 218 |
Jae Yoon Lee, Yung Hoon Jung, Jae Yeon Lee, Soo Gil Kim, and Seongjae Cho |
Optimization of pulse shape for suppressing current overshoot in ReRAM |
2018 International Conference on Electronics, Information, and Communication (ICEIC) |
857-860 |
Honolulu, USA |
Jan. 24-27, 2018 |
| 217 |
Seunghyun Kim, Youngmin Kim, Do-Bin Kim, Sang-Ho Lee, Seongjae Cho, and Byung-Gook Park |
Effects of charge centroid location on program characteristics in the charge-trap flash memory |
2018 International Conference on Electronics, Information, and Communication (ICEIC) |
228-230 |
Honolulu, USA |
Jan. 24-27, 2018 |
| 216 |
Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho |
Design of a novel SiGe FinFET with accurate modeling of saturation velocity and high-frequency performances |
The 10th International Conference on Advanced Materials and Devices (ICAMD) |
723 |
Jeju, Korea |
Dec. 5-8, 2017 |
| 215 |
Yongbeom Cho, Youngmin Kim, Junsoo Lee, Seongjae Cho, and Byung-Gook Park |
Nanowire TFET-Based Floating-Body Synaptic Transistor |
Europe-Korea Conference on Science and Technology (EKC) 2017 |
ICTF-07 |
Stockholm, Sweden |
Jul. 26-29, 2017 |
| 214 |
Yunghun Jung and Seongjae Cho |
Enhancement of Device Performances of SiGe Tunneling Field-Effect Transistor and Short-Channel Effects |
Europe-Korea Conference on Science and Technology (EKC) 2017 |
ICTF-06 |
Stockholm, Sweden |
Jul. 26-29, 2017 |
| 213 |
Junsoo Lee, Eunseon Yu, and Seongjae Cho |
Electrical Characterization of Alumina and Hafina Prepared by Atomic-Layer Deposition under Various Process Conditions |
2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
384-387 |
Gyeongju, Korea |
Jul. 3-5, 2017 |
| 212 |
Jae Yoon Lee, Junsoo Lee, and Seongjae Cho |
Design and Characterization of Isotype-Doped Si/Ge Heterojunction Dual-Gate Tunneling Field-Effect Transistor |
2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
360-363 |
Gyeongju, Korea |
Jul. 3-5, 2017 |
| 211 |
Junsoo Lee, Yongbeom Cho, Youngmin Kim, Eunseon Yu, and Seongjae Cho |
Processing and Characterization of Ultra-Thin Poly-Crytalline Silicon for Memory and Logic Applications |
2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
233-236 |
Gyeongju, Korea |
Jul. 3-5, 2017 |
| 210 |
Seongjae Cho and Byung-Gook Park |
[Invited] Si and novel group-IV materials and devices for advanced VLSI system |
The 32nd International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) |
SS-01-04 |
Busan, Korea |
Jul. 2-5, 2017 |
| 209 |
Min-Woo Kwon, Sungmin Hwang, Myung-Hyun Baek, Seongjae Cho, and Byung-Gook Park |
Dual Gate Positive Feedback Field-Effect Transistor for Low Power Analog Circuit |
Silicon Nanoelectronics Workshop (SNW) 2017 |
115-116 |
Kyoto, Japan |
Jun. 4-5, 2017 |
| 208 |
Seunghyun Kim, Do-Bin Kim, Eunseon Yu, Sang-Ho Lee, Seongjae Cho, and Byung-Gook Park |
Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory |
Silicon Nanoelectronics Workshop (SNW) 2017 |
79-80 |
Kyoto, Japan |
Jun. 4-5, 2017 |
| 207 |
Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park |
Uniformity Improvement of SiNx-based Resistive Switching Memory by Suppressed Internal Overshoot Current |
Silicon Nanoelectronics Workshop (SNW) 2017 |
19-20 |
Kyoto, Japan |
Jun. 4-5, 2017 |
| 206 |
Yung Hun Jung, Yongbeom Cho, Youngmin Kim, Junsoo Lee, Eunseon Yu, and Seongjae Cho |
High-Frequency Characteristics of Tunneling Field-Effect Transistor Having Multi-Gate Structure |
2017 IEIE Joint Conference on Microwave and Wave Propagation |
47 |
Seoul, Korea |
May 19, 2017 |
| 205 |
Eunseon Yu, Junsoo Lee, and Seongjae Cho |
Ultra-Thin SiGe Channel FinFET for Sub-10-nm Technology Nodes |
The 24th Korean Conference on Semiconductors (KCS) |
191 |
Hongcheon, Korea |
Feb. 13-15, 2017 |
| 204 |
Sungjun Kim, Tae-Hyeon Kim, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park |
Self-compliance bipolar resistive switching in SiN-based RRAM with MIS structure |
The 24th Korean Conference on Semiconductors (KCS) |
190 |
Hongcheon, Korea |
Feb. 13-15, 2017 |
| 203 |
Sungjun Kim, Min-Hwi Kim, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park |
Improved Controllability of Conductance by Inserting Al2O3 in SiN-based Resistive Switching Memory |
The 24th Korean Conference on Semiconductors (KCS) |
109 |
Hongcheon, Korea |
Feb. 13-15, 2017 |
| 202 |
Yongbeom Cho and Seongjae Cho |
Study on Material Properties of Tensile-Strained Ge and Sn-Incorporated Ge through First-Principle Simulation for Advanced Si CMOS Technology |
The 24th Korean Conference on Semiconductors (KCS) |
93 |
Hongcheon, Korea |
Feb. 13-15, 2017 |
| 201 |
Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park |
Fabrication and Resistive Switching Characteristics of Silicon Nano-wedge Structure RRAM |
The 24th Korean Conference on Semiconductors (KCS) |
51 |
Hongcheon, Korea |
Feb. 13-15, 2017 |
Gachon University