| 209 |
Min-Woo Kwon, Sungmin Hwang, Myung-Hyun Baek, Seongjae Cho, and Byung-Gook Park |
Dual Gate Positive Feedback Field-Effect Transistor for Low Power Analog Circuit |
Silicon Nanoelectronics Workshop (SNW) 2017 |
115-116 |
Kyoto, Japan |
Jun. 4-5, 2017 |
| 208 |
Seunghyun Kim, Do-Bin Kim, Eunseon Yu, Sang-Ho Lee, Seongjae Cho, and Byung-Gook Park |
Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory |
Silicon Nanoelectronics Workshop (SNW) 2017 |
79-80 |
Kyoto, Japan |
Jun. 4-5, 2017 |
| 207 |
Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park |
Uniformity Improvement of SiNx-based Resistive Switching Memory by Suppressed Internal Overshoot Current |
Silicon Nanoelectronics Workshop (SNW) 2017 |
19-20 |
Kyoto, Japan |
Jun. 4-5, 2017 |
| 206 |
Yung Hun Jung, Yongbeom Cho, Youngmin Kim, Junsoo Lee, Eunseon Yu, and Seongjae Cho |
High-Frequency Characteristics of Tunneling Field-Effect Transistor Having Multi-Gate Structure |
2017 IEIE Joint Conference on Microwave and Wave Propagation |
47 |
Seoul, Korea |
May 19, 2017 |
| 205 |
Eunseon Yu, Junsoo Lee, and Seongjae Cho |
Ultra-Thin SiGe Channel FinFET for Sub-10-nm Technology Nodes |
The 24th Korean Conference on Semiconductors (KCS) |
191 |
Hongcheon, Korea |
Feb. 13-15, 2017 |
| 204 |
Sungjun Kim, Tae-Hyeon Kim, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park |
Self-compliance bipolar resistive switching in SiN-based RRAM with MIS structure |
The 24th Korean Conference on Semiconductors (KCS) |
190 |
Hongcheon, Korea |
Feb. 13-15, 2017 |
| 203 |
Sungjun Kim, Min-Hwi Kim, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park |
Improved Controllability of Conductance by Inserting Al2O3 in SiN-based Resistive Switching Memory |
The 24th Korean Conference on Semiconductors (KCS) |
109 |
Hongcheon, Korea |
Feb. 13-15, 2017 |
| 202 |
Yongbeom Cho and Seongjae Cho |
Study on Material Properties of Tensile-Strained Ge and Sn-Incorporated Ge through First-Principle Simulation for Advanced Si CMOS Technology |
The 24th Korean Conference on Semiconductors (KCS) |
93 |
Hongcheon, Korea |
Feb. 13-15, 2017 |
| 201 |
Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park |
Fabrication and Resistive Switching Characteristics of Silicon Nano-wedge Structure RRAM |
The 24th Korean Conference on Semiconductors (KCS) |
51 |
Hongcheon, Korea |
Feb. 13-15, 2017 |
| 200 |
Youngmin Kim, Seongjae Cho, Hyungsoon Shin, and Byung-Gook Park |
Design and Operation of Capacitorless Si Volatile Memory Based on 2-Terminal Thyristor (2-T TRAM) |
The 24th Korean Conference on Semiconductors (KCS) |
50 |
Hongcheon, Korea |
Feb. 13-15, 2017 |
| 199 |
Seunghyun Kim, Do-Bin Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Seongjae Cho, and Byung-Gook Park |
Compact modeling of NAND flash memory operation through accurate locating the vertical position of trapped charges |
The 24th Korean Conference on Semiconductors (KCS) |
50 |
Hongcheon, Korea |
Feb. 13-15, 2017 |
| 198 |
Eunseon Yu, Seongjae Cho, and Byung-Gook Park |
Capacitance-Voltage Characterization of Ultra-Thin Floating-Body MOSFETs |
The 24th Korean Conference on Semiconductors (KCS) |
34 |
Hongcheon, Korea |
Feb. 13-15, 2017 |
| 197 |
Junsoo Lee and Seongjae Cho |
Optimal Design of Si Dual-Gate Junctionless Tunneling Field-Effect Transistor |
The 24th Korean Conference on Semiconductors (KCS) |
33 |
Hongcheon, Korea |
Feb. 13-15, 2017 |
| 196 |
Seunghyun Kim, Do-Bin Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Seongjae Cho, Byung-Gook Park |
Circuit-level macro modeling of charge-trap flash memory array |
2017 International Conference on Electronics, Information, and Communication (ICEIC) |
99-101 |
Phuket, Thailand |
Jan. 11-14, 2017 |
| 195 |
Youngmin Kim, Yongbeom Cho, Seongjae Cho, Sang Sig Kim, and Byung-Gook Park |
Scaling and Sub-1-V Low-Voltage Operation Characteristics of TRAM Memory Device Based on 2-Terminal Thyristor |
2016 IEIE Fall Conference |
62-65 |
Daegu, Korea |
Nov. 25-26, 2016 |
| 194 |
Yongbeom Cho, Youngmin Kim, Seongjae Cho, Sang Sig Kim, and Byung-Gook Park |
Optimization of Program Operation for the Scaled 2-Terminal TRAM Memory Device |
2016 IEIE Fall Conference |
106-109 |
Daegu, Korea |
Nov. 25-26, 2016 |
| 193 |
Eunseon Yu, Seongjae Cho, and Byung-Gook Park |
Non-Quasi-Static Capacitance-Voltage Characteristics of Ultra-Thin-Body n-type MOSFET Device |
2016 IEIE Fall Conference |
129-132 |
Daegu, Korea |
Nov. 25-26, 2016 |
| 192 |
Yung Hun Jung, Yongbeom Cho, and Seongjae Cho |
Characterization of Ge1-xSnx by first-principle simulation based on modified Becke-Johnson exchange potential for device applications |
2016 IEIE Fall Conference |
133-136 |
Daegu, Korea |
Nov. 25-26, 2016 |
| 191 |
Seongjae Cho |
[Invited] Advanced Group-IV Materials and Devices for Next-Generation Integrated System |
2016 International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) |
1-1-0588 |
Jeju, Korea |
Nov. 6-9, 2016 |
| 190 |
Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Taehyeon Kim, Suhyun Bang, Seongjae Cho, and Byung-Gook Park |
Si3N4-Based RRAM with Flexibility of Physical Design |
The 29th International Microprocesses and Nanotechnology Conference (MNC) |
10P-7-106L |
Kyoto, Japan |
Nov. 8-11, 2016 |
Gachon University