Conferences

Authors Title Conference Page Venue Date
175 Xiaochi Chen, Seongjae Cho, James S. Harris, and Byung-Gook Park Ge-on-Si microdisk resonator with enhanced optical confinement by SiNx stressor for Si electronic and photonic integrated system The 23rd Korean Conference on Semiconductors (KCS) 260 Jeongsun, Korea Feb. 22-24, 2016
174 Jeongmin Lee, Jungmin Lee, Mina Yun, Yong-Hee Lee, and Seongjae Cho Growth of polycrystalline Ge on Si by using low-temperature processes The 23rd Korean Conference on Semiconductors (KCS) 229 Jeongsun, Korea Feb. 22-24, 2016
173 Yongbeom Cho, Oleg Rubel, and Seongjae Cho First-principle study of GeSn alloys for electrical and optical characterizations The 23rd Korean Conference on Semiconductors (KCS) 227 Jeongsun, Korea Feb. 22-24, 2016
172 Jeongmin Lee, Mina Yun, and Seongjae Cho Characterization of GeSn deposited on Si by low-temperature sputter epitaxy The 23rd Korean Conference on Semiconductors (KCS) 134 Jeongsun, Korea Feb. 22-24, 2016
171 Min-Hwi Kim, Sungjun Kim, Sunghun Jung, Seongjae Cho, and Byung-Gook Park DC and pulse switching characteristics of fully Si processing-compatible SiN-based RRAM The 23rd Korean Conference on Semiconductors (KCS) 83 Jeongsun, Korea Feb. 22-24, 2016
170 Seongjae Cho Thyristor technology for ultra-sharp-switching logic and capacitorless dynamic random-access memory (DRAM) applications The 23rd Korean Conference on Semiconductors (KCS) 84 Jeongsun, Korea Feb. 22-24, 2016
169 Seunghyun Kim, Min-Hwi Kim, Sang-Ho Lee, Youngmin Kim, Hyung-Min Kim, Young Goan Kim, Seongjae Cho, and Byung-Gook Park Highly accurate circuit-level macro modeling of charge-trap flash memory The 23rd Korean Conference on Semiconductors (KCS) 83 Jeongsun, Korea Feb. 22-24, 2016
168 Min-Hwi Kim, Sungjun Kim, Sunghun Jung, Seongjae Cho, and Byung-Gook Park Circuit-level simulation of RRAM cross-point array based on a reliable device-level compact modeling The 23rd Korean Conference on Semiconductors (KCS) 50 Jeongsun, Korea Feb. 22-24, 2016
167 Youngmin Kim and Seongjae Cho Si CMOS extension and Ge technology perspectives forecase through metal-oxide-semiconductor junctionless field-effect transistor The 23rd Korean Conference on Semiconductors (KCS) 49 Jeongsun, Korea Feb. 22-24, 2016
166 Junsoo Lee, Youngmin Kim, and Seongjae Cho Optimal design of 10-nm junctionless field-effect transistor with poly-Si channel in consideration of quantum-mechanical drift-diffusion models The 23rd Korean Conference on Semiconductors (KCS) 19 Jeongsun, Korea Feb. 22-24, 2016
165 Eunseon Yu, Mina Yun, and Seongjae Cho Nanowire PMOSFET having Si core and ultra-thin Ge peripheral channel The 23rd Korean Conference on Semiconductors (KCS) 20 Jeongsun, Korea Feb. 22-24, 2016
164 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Min Ju Kim, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park Comparison of forming voltage in oxide-based resistive switching memories International Conference on Electronics, Information, and Communication (ICEIC) 2016 747-748 Danang, Vietnam Jan. 27-30, 2016
163 Sungjun Kim, Su Hyun Bang, Tae-Hyeon Kim, Min Ju Yun, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park Conduction Mechanism in Resistive Switching Memory Cells Using HfO2 film The 9th International Conference on Advanced Materials and Devices (ICAMD) Po-Na15-051 Jeju, Korea Dec. 7-9, 2015
162 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Min Ju Yun, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park Investigation on Reliability of Ni/Si3N4/SiO2/Si RRAM Device The 9th International Conference on Advanced Materials and Devices (ICAMD) Po-Na15-015 Jeju, Korea Dec. 7-9, 2015
161 Mina Yun and Seongjae Cho Process Modeling and Device Application of Germanium Condensation 2015 IEIE Fall Conference 89-92 Wonju, Korea Nov. 27-28, 2015
160 Sungjun Kim, Sunghun Jung, Hyungjin Kim, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Min Ju Yun, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park SiO2-Based Resistive-Switching Random-Access Memory 2015 IEIE Fall Conference 86-88 Wonju, Korea Nov. 27-28, 2015
159 Jun-Soo Lee, Youngmin Kim, and Seongjae Cho Design of 10-nm-Level Junctionless Field-Effect Transistor with Poly-Si Channel under Quantum Mechanical Effects in Drift and Diffusion 2015 IEIE Fall Conference 37-40 Wonju, Korea Nov. 27-28, 2015
158 Sungjoon Kim, Sungjun Kim, Seongjae Cho, Garam Kim, and Byung-Gook Park Optimization of current injection for high-power light-emitting diode (LED) by novel contact structuring International Microprocesses and Nanotechnology Conference (MNC) 2015 13P-11-27 Toyama, Japan Nov. 10-13, 2015
157 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park Nitride-Based RRAM Devices for Various Applications The 30th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 240-241 Seoul, Korea Jun. 29 - Jul. 2, 2015
156 Kyung-Chang Ryoo, Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park Structural Effects on Unipolar Resistive Switching Behaviors in Oxide-Based RRAM for High-Density and Low-Power Applications The 30th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 235-236 Seoul, Korea Jun. 29 - Jul. 2, 2015
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