Conferences

Authors Title Conference Page Venue Date
208 Seunghyun Kim, Do-Bin Kim, Eunseon Yu, Sang-Ho Lee, Seongjae Cho, and Byung-Gook Park Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory Silicon Nanoelectronics Workshop (SNW) 2017 79-80 Kyoto, Japan Jun. 4-5, 2017
207 Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park Uniformity Improvement of SiNx-based Resistive Switching Memory by Suppressed Internal Overshoot Current Silicon Nanoelectronics Workshop (SNW) 2017 19-20 Kyoto, Japan Jun. 4-5, 2017
206 Yung Hun Jung, Yongbeom Cho, Youngmin Kim, Junsoo Lee, Eunseon Yu, and Seongjae Cho High-Frequency Characteristics of Tunneling Field-Effect Transistor Having Multi-Gate Structure 2017 IEIE Joint Conference on Microwave and Wave Propagation 47 Seoul, Korea May 19, 2017
205 Eunseon Yu, Junsoo Lee, and Seongjae Cho Ultra-Thin SiGe Channel FinFET for Sub-10-nm Technology Nodes The 24th Korean Conference on Semiconductors (KCS) 191 Hongcheon, Korea Feb. 13-15, 2017
204 Sungjun Kim, Tae-Hyeon Kim, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park Self-compliance bipolar resistive switching in SiN-based RRAM with MIS structure The 24th Korean Conference on Semiconductors (KCS) 190 Hongcheon, Korea Feb. 13-15, 2017
203 Sungjun Kim, Min-Hwi Kim, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park Improved Controllability of Conductance by Inserting Al2O3 in SiN-based Resistive Switching Memory The 24th Korean Conference on Semiconductors (KCS) 109 Hongcheon, Korea Feb. 13-15, 2017
202 Yongbeom Cho and Seongjae Cho Study on Material Properties of Tensile-Strained Ge and Sn-Incorporated Ge through First-Principle Simulation for Advanced Si CMOS Technology The 24th Korean Conference on Semiconductors (KCS) 93 Hongcheon, Korea Feb. 13-15, 2017
201 Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park Fabrication and Resistive Switching Characteristics of Silicon Nano-wedge Structure RRAM The 24th Korean Conference on Semiconductors (KCS) 51 Hongcheon, Korea Feb. 13-15, 2017
200 Youngmin Kim, Seongjae Cho, Hyungsoon Shin, and Byung-Gook Park Design and Operation of Capacitorless Si Volatile Memory Based on 2-Terminal Thyristor (2-T TRAM) The 24th Korean Conference on Semiconductors (KCS) 50 Hongcheon, Korea Feb. 13-15, 2017
199 Seunghyun Kim, Do-Bin Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Seongjae Cho, and Byung-Gook Park Compact modeling of NAND flash memory operation through accurate locating the vertical position of trapped charges The 24th Korean Conference on Semiconductors (KCS) 50 Hongcheon, Korea Feb. 13-15, 2017
198 Eunseon Yu, Seongjae Cho, and Byung-Gook Park Capacitance-Voltage Characterization of Ultra-Thin Floating-Body MOSFETs The 24th Korean Conference on Semiconductors (KCS) 34 Hongcheon, Korea Feb. 13-15, 2017
197 Junsoo Lee and Seongjae Cho Optimal Design of Si Dual-Gate Junctionless Tunneling Field-Effect Transistor The 24th Korean Conference on Semiconductors (KCS) 33 Hongcheon, Korea Feb. 13-15, 2017
196 Seunghyun Kim, Do-Bin Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Seongjae Cho, Byung-Gook Park Circuit-level macro modeling of charge-trap flash memory array 2017 International Conference on Electronics, Information, and Communication (ICEIC) 99-101 Phuket, Thailand Jan. 11-14, 2017
195 Youngmin Kim, Yongbeom Cho, Seongjae Cho, Sang Sig Kim, and Byung-Gook Park Scaling and Sub-1-V Low-Voltage Operation Characteristics of TRAM Memory Device Based on 2-Terminal Thyristor 2016 IEIE Fall Conference 62-65 Daegu, Korea Nov. 25-26, 2016
194 Yongbeom Cho, Youngmin Kim, Seongjae Cho, Sang Sig Kim, and Byung-Gook Park Optimization of Program Operation for the Scaled 2-Terminal TRAM Memory Device 2016 IEIE Fall Conference 106-109 Daegu, Korea Nov. 25-26, 2016
193 Eunseon Yu, Seongjae Cho, and Byung-Gook Park Non-Quasi-Static Capacitance-Voltage Characteristics of Ultra-Thin-Body n-type MOSFET Device 2016 IEIE Fall Conference 129-132 Daegu, Korea Nov. 25-26, 2016
192 Yung Hun Jung, Yongbeom Cho, and Seongjae Cho Characterization of Ge1-xSnx by first-principle simulation based on modified Becke-Johnson exchange potential for device applications 2016 IEIE Fall Conference 133-136 Daegu, Korea Nov. 25-26, 2016
191 Seongjae Cho [Invited] Advanced Group-IV Materials and Devices for Next-Generation Integrated System 2016 International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 1-1-0588 Jeju, Korea Nov. 6-9, 2016
190 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Taehyeon Kim, Suhyun Bang, Seongjae Cho, and Byung-Gook Park Si3N4-Based RRAM with Flexibility of Physical Design The 29th International Microprocesses and Nanotechnology Conference (MNC) 10P-7-106L Kyoto, Japan Nov. 8-11, 2016
189 Junsoo Lee, Yongbeom Cho, and Seongjae Cho Accurate Design of Si-Compatible Tunneling Field-Effect Transistor with GeSn Source Junction by Ab Initio Calculation and Device Simulation 2016 International Conference on Solid State Devices and Materials (SSDM) PS-3-01 Tsukuba, Japan Sep. 26-29, 2016
이전페이지 1 2 3 4 5 6 7 8 9 10 다음페이지