Conferences

Authors Title Conference Page Venue Date
200 Youngmin Kim, Seongjae Cho, Hyungsoon Shin, and Byung-Gook Park Design and Operation of Capacitorless Si Volatile Memory Based on 2-Terminal Thyristor (2-T TRAM) The 24th Korean Conference on Semiconductors (KCS) 50 Hongcheon, Korea Feb. 13-15, 2017
199 Seunghyun Kim, Do-Bin Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Seongjae Cho, and Byung-Gook Park Compact modeling of NAND flash memory operation through accurate locating the vertical position of trapped charges The 24th Korean Conference on Semiconductors (KCS) 50 Hongcheon, Korea Feb. 13-15, 2017
198 Eunseon Yu, Seongjae Cho, and Byung-Gook Park Capacitance-Voltage Characterization of Ultra-Thin Floating-Body MOSFETs The 24th Korean Conference on Semiconductors (KCS) 34 Hongcheon, Korea Feb. 13-15, 2017
197 Junsoo Lee and Seongjae Cho Optimal Design of Si Dual-Gate Junctionless Tunneling Field-Effect Transistor The 24th Korean Conference on Semiconductors (KCS) 33 Hongcheon, Korea Feb. 13-15, 2017
196 Seunghyun Kim, Do-Bin Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Seongjae Cho, Byung-Gook Park Circuit-level macro modeling of charge-trap flash memory array 2017 International Conference on Electronics, Information, and Communication (ICEIC) 99-101 Phuket, Thailand Jan. 11-14, 2017
195 Youngmin Kim, Yongbeom Cho, Seongjae Cho, Sang Sig Kim, and Byung-Gook Park Scaling and Sub-1-V Low-Voltage Operation Characteristics of TRAM Memory Device Based on 2-Terminal Thyristor 2016 IEIE Fall Conference 62-65 Daegu, Korea Nov. 25-26, 2016
194 Yongbeom Cho, Youngmin Kim, Seongjae Cho, Sang Sig Kim, and Byung-Gook Park Optimization of Program Operation for the Scaled 2-Terminal TRAM Memory Device 2016 IEIE Fall Conference 106-109 Daegu, Korea Nov. 25-26, 2016
193 Eunseon Yu, Seongjae Cho, and Byung-Gook Park Non-Quasi-Static Capacitance-Voltage Characteristics of Ultra-Thin-Body n-type MOSFET Device 2016 IEIE Fall Conference 129-132 Daegu, Korea Nov. 25-26, 2016
192 Yung Hun Jung, Yongbeom Cho, and Seongjae Cho Characterization of Ge1-xSnx by first-principle simulation based on modified Becke-Johnson exchange potential for device applications 2016 IEIE Fall Conference 133-136 Daegu, Korea Nov. 25-26, 2016
191 Seongjae Cho [Invited] Advanced Group-IV Materials and Devices for Next-Generation Integrated System 2016 International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 1-1-0588 Jeju, Korea Nov. 6-9, 2016
190 Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Taehyeon Kim, Suhyun Bang, Seongjae Cho, and Byung-Gook Park Si3N4-Based RRAM with Flexibility of Physical Design The 29th International Microprocesses and Nanotechnology Conference (MNC) 10P-7-106L Kyoto, Japan Nov. 8-11, 2016
189 Junsoo Lee, Yongbeom Cho, and Seongjae Cho Accurate Design of Si-Compatible Tunneling Field-Effect Transistor with GeSn Source Junction by Ab Initio Calculation and Device Simulation 2016 International Conference on Solid State Devices and Materials (SSDM) PS-3-01 Tsukuba, Japan Sep. 26-29, 2016
188 Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Su Hyun Bang, Min Ju Yun, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park Dopant concentration dependent resistive switching characteristics in silicon nitride-based memory devices 20th International Vacuum Congress 459 Busan, Korea Aug. 21-26, 2016
187 Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Min Su Cho, Seongjae Cho, Jung-Hee Lee, and In Man Kang Electrical Performance of InN/GaN-based Tunneling Field-effect Transistor with Subthrethold Swing below 60 mV/decade The 14th International Nanotech Symposium & Nano-Convergence Exhibition (NANO KOREA 2016) P1068_0098 KINTEX, Korea Jul. 13-15, 2016
186 Min Su Cho, Jae Hwa Seo, Young Jun Yoon, Ra Hee Kwon, Young In Jang, Chul-Ho Won, Jeong-Gil Kim, Jung-Hee Lee, Seongjae Cho, and In Man Kang Design and Analysis of Logic Inverter Using Antimony-based Compound Semiconductor Junctionless Transistor The 14th International Nanotech Symposium & Nano-Convergence Exhibition (NANO KOREA 2016) P1601_0277 KINTEX, Korea Jul. 13-15, 2016
185 Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Seongjae Cho, and In Man Kang Effect of electric fringe-field on low-power and radio-frequency performance of sub-10 nm junctionless transistors with hetero-dieletric spacer structure The 14th International Nanotech Symposium & Nano-Convergence Exhibition (NANO KOREA 2016) P1601-0097 KINTEX, Korea Jul. 13-15, 2016
184 Seunghyun Kim, Myung-Hyun Baek, Dae Woong Kwon, Do-Bin Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Young Goan Kim, Seongjae Cho, and Byung-Gook Park Characterization of the vertical position of the trapped charge in charge-trap flash memory 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 473-476 Hakodate, Japan Jul. 4-6, 2016
183 Yongbeom Cho, Junsoo Lee, and Seongjae Cho Ab Initio Calculation of Effective Density of States of GeSn and Its Application to Evaluate the Current Drivability of Tunneling Field-Effect Transistor with GeSn Source Junction 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 458-463 Hakodate, Japan Jul. 4-6, 2016
182 Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Su Hyun Bang, Seongjae Cho, and Byung-Gook Park SiN-Based Resistive Random-Access Memory Inserting Tunnel Barrier 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 399-400 Hakodate, Japan Jul. 4-6, 2016
181 Junsoo Lee, Yongbeom Cho, Youngmin Kim, and Seongjae Cho Design and Characterization of GeSn Junctionless Tunneling FinFET 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 326-329 Hakodate, Japan Jul. 4-6, 2016
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