| 40 |
Seongjae Cho, Jung Hoon Lee, Sunghun Jung, Se Hwan Park, and Byung-Gook Park |
Fabrication and Operation Methods of a One-time Programmable (OTP) Nonvolatile Memory (NVM) Based on a Metal-oxide-semiconductor Structure |
Journal of the Korean Physical Society |
58 |
5 |
1488-1493 |
May 2011 |
| 39 |
Seongjae Cho, Kyung Rok Kim, Byung-Gook Park, and In Man Kang |
RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs |
IEEE Transactions on Electron Devices |
58 |
5 |
1388-1396 |
May 2011 |
| 38 |
Seongjae Cho, Won Bo Shim, Yoon Kim, Jang-Gn Yun, Jong Duk Lee, Hyungcheol Shin, Jong-Ho Lee, and Byung-Gook Park |
Charge-Trap Folded NAND Flash Memory Device with Band-gap-Engineered Storage Node |
IEEE Transactions on Electron Devices |
58 |
2 |
288-295 |
Feb. 2011 |
| 37 |
Seongjae Cho, Kyung Rok Kim, Byung-Gook Park, and In Man Kang |
Compact modeling of silicon nanowire MOSFET for radio frequency application |
Microwave and Optical Technology Letters |
53 |
2 |
471-473 |
Feb. 2011 |
| 36 |
Wandong Kim, Jung Hoon Lee, Jang-Gn Yun, Seongjae Cho, Dong Hua Li, Yoon Kim, Doo-Hyun Kim, Gil Sung Lee, Se Hwan Park, Won Bo Shim, Jung-Ho Lee, Hyungcheol Shin, and Byung-Gook Park |
Arch NAND Flash Memory Array with Improved Virtual Source/Drain Performance |
IEEE Electron Device Letters |
31 |
12 |
1374-1376 |
Dec. 2010 |
| 35 |
Seongjae Cho, Shinichi O'uchi, Kazuhiko Endo, Sang Wan Kim, Younghwan Son, In Man Kang, Meishoku Masahara, James S. Harris, Jr., and Byung-Gook Park |
Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters |
Journal of Semiconductor Technology and Science |
10 |
4 |
265-275 |
Dec. 2010 |
| 34 |
Jung Hoon Lee, Gil Sung Lee, Seongjae Cho, Jang-Gn Yun, and Byung-Gook Park |
Investigation of Field Concentration Effects in Arch Gate Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory |
Japanese Journal of Applied Physics |
49 |
11 |
1142021-1142026 |
Nov. 2010 |
| 33 |
Seongjae Cho, Kyung Rok Kim, Byung-Gook Park, and In Man Kang |
Non-Quasi-Static Modeling of Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor and Its Model Verification up to 1 THz |
Japanese Journal of Applied Physics |
49 |
11 |
1102061-1102063 |
Nov. 2010 |
| 32 |
Seongjae Cho, Kyung Rok Kim, Byung-Gook Park, and In Man Kang |
Optimum Design of Junctionless MOSFET Based on Silicon Nanowire Structure and Analysis on Basic RF Characteristics |
Journal of Institute of Electronics Engineers of Korea: Semiconductor Devices |
47 |
10 |
14-22 |
Oct. 2010 |
| 31 |
Seongjae Cho, In Man Kang, and Kyung Rok Kim |
Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs |
IEICE Electronics Express |
7 |
19 |
1499-1503 |
Oct. 2010 |
| 30 |
Seongjae Cho, Jung Hoon Lee, Shinichi O'uchi, Kazuhiko Endo, Meishoku Masahara, and Byung-Gook Park |
Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL) |
Solid-State Electronics |
54 |
10 |
1060-1065 |
Oct. 2010 |
| 29 |
Doo-Hyun Kim, Seongjae Cho, Dong Hua Li, Jang-Gn Yun, Jung Hoon Lee, Gil Sung Lee, Yoon Kim, Won Bo Shim, Se Hwan Park, Wandong Kim, Hyungcheol Shin, and Byung-Gook Park |
Program/Erase Model of Nitride-Based NAND-Type Charge Trap Flash Memories |
Japanese Journal of Applied Physics |
49 |
8 |
843011-843014 |
Aug. 2010 |
| 28 |
Seongjae Cho, Jung-Dal Choi, Byung-Gook Park, and Il Hwan Cho |
Effects of channel doping concentration and fin dimension variation on self-boosting of channel potential in NAND-type SONOS flash memory array based on bulk-FinFETs |
Current Applied Physics |
10 |
4 |
1096-1102 |
Jul. 2010 |
| 27 |
Seongjae Cho, Jung Hoon Lee, Yoon Kim, Jang Gn Yun, Hyungcheol Shin, and Byung-Gook Park |
Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices |
IEICE Transactions on Electronics |
E93-C |
5 |
596-601 |
May 2010 |
| 26 |
Dong Seup Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jung Han Lee, Seongjae Cho, and Byung-Gook Park |
Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer |
IEICE Transactions on Electronics |
E93-C |
5 |
540-545 |
May 2010 |
| 25 |
Seongjae Cho, Hee-Sauk Jhon, Jung Hoon Lee, Se Hwan Park, Hyungcheol Shin, and Byung-Gook Park |
Device and Circuit Co-Design Strategy for Application to Low Noise Amplifier (LNA) Based on Silicon Nanowire MOSFETs |
Japanese Journal of Applied Physics |
49 |
4 |
04DN03-1-04DN03-7 |
Apr. 2010 |
| 24 |
Yoon Kim, Jang-Gn Yun, Seongjae Cho, and Byung-Gook Park |
Highly Integrated 3-dimensional NOR Flash Array with Vertical 4-bit SONOS (V4SONOS) |
Journal of Institute of Electronics Engineers of Korea: Semiconductor Devices |
47 |
2 |
102-107 |
Feb. 2010 |
| 23 |
Seongjae Cho, Shinichi O'uchi, Kazuhiko Endo, Takashi Matsukawa, Kunihiro Sakamoto, Yongxun Liu, Byung-Gook Park, and Meishoku Masahara |
Minimization of Gate-Induced Drain Leakage by Controlling Gate Underlap Length for Low-Standby-Power Operation of 20-nm-Level Four-Terminal Silicon-on-Insulator Fin-Shaped Field Effect Transistor |
Japanese Journal of Applied Physics |
49 |
2 |
024203-1-024203-5 |
Feb. 2010 |
| 22 |
Yoon Kim, Il Han Park, Seongjae Cho, Jang-Gn Tun, Jung Hoon Lee, Doo-Hyun Kim, Gil Sung Lee, Se-Hwan Park, Dong Hua Lee, Won Bo Shim, Wandong Kim, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park |
A Vertical 4-Bit SONOS Flash Memory and a Unique 3-D Vertical NOR Array Structure |
IEEE Transactions on Nanotechnology |
9 |
1 |
70-76 |
Jan. 2010 |
| 21 |
Seongjae Cho, Won Bo Shim, Il Han Park, Yoon Kim, and Byung-Gook Park |
Highly Scalable 3-D NAND-NOR Hybid Dual-Bit per Cell Flash Memory Devices with Additional Cut-off Gate |
Journal of the Korean Physical Society |
56 |
1 |
137-141 |
Jan. 2010 |
Gachon University