| 46 |
Jang-Gn Yun, Seongjae Cho, and Byung-Gook Park |
Stacked-nanowire device with virtual source/drain (SD-VSD) for 3D NAND flash memory application |
Solid-State Electronics |
64 |
1 |
41-46 |
Oct. 2011 |
| 45 |
Myounggon Kang, Wookghee Hahn, Il Han Park, Juyoung Park, Youngsun Song, Hocheol Lee, Changgyu Eun, Sanghyun Ju, Kihwan Choi, Youngho Lim, Seunghyun Jang, Seongjae Cho, Byung-Gook Park, and Hyungcheol Shin |
DIBL-Induced Program Disturb Characteristics in 32-nm NAND Flash Memory Array |
IEEE Transactions on Electron Devices |
58 |
10 |
3626-3629 |
Oct. 2011 |
| 44 |
Seongjae Cho, Robert Chen, Sukmo Koo, Gary Shambat, Hai Lin, Namkyoo Park, Jelena Vučković, Theodore I. Kamins, Byung-Gook Park, and James S. Harris, Jr. |
Fabrication and Analysis of Epitaxially Grown Ge1-xSnx Microdisk Resonator with 20-nm Free Spectral Range |
IEEE Photonics Technology Letters |
23 |
20 |
1535-1537 |
Oct. 2011 |
| 43 |
Seongjae Cho, Min-Chul Sun, Garam Kim, Theoroe I. Kamins, Byung-Gook Park, and James S. Harris, Jr. |
Design Optimization of a Type-I Heterojunction Tunneling Field-Effect Transistor (I-HTFET) for High Performance Logic Technology |
Journal of Semiconductor Technology and Science |
11 |
3 |
182-189 |
Sep. 2011 |
| 42 |
Gil Sung Lee, Doo-Hyun Kim, Seongjae Cho, and Byung-Gook Park |
A new 1T DRAM cell: cone type 1T DRAM cell |
IEICE Transactions on Electronics |
E94-C |
5 |
681-685 |
May 2011 |
| 41 |
Seongjae Cho and Byung-Gook Park |
A Novel Sensing Scheme for Reliable Read Operation of Ultrathin-Body Vertical NAND Flash Memory Devices |
IEEE Transactions on Electron Devices |
58 |
8 |
2814-2817 |
Aug. 2011 |
| 40 |
Seongjae Cho, Jung Hoon Lee, Sunghun Jung, Se Hwan Park, and Byung-Gook Park |
Fabrication and Operation Methods of a One-time Programmable (OTP) Nonvolatile Memory (NVM) Based on a Metal-oxide-semiconductor Structure |
Journal of the Korean Physical Society |
58 |
5 |
1488-1493 |
May 2011 |
| 39 |
Seongjae Cho, Kyung Rok Kim, Byung-Gook Park, and In Man Kang |
RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs |
IEEE Transactions on Electron Devices |
58 |
5 |
1388-1396 |
May 2011 |
| 38 |
Seongjae Cho, Won Bo Shim, Yoon Kim, Jang-Gn Yun, Jong Duk Lee, Hyungcheol Shin, Jong-Ho Lee, and Byung-Gook Park |
Charge-Trap Folded NAND Flash Memory Device with Band-gap-Engineered Storage Node |
IEEE Transactions on Electron Devices |
58 |
2 |
288-295 |
Feb. 2011 |
| 37 |
Seongjae Cho, Kyung Rok Kim, Byung-Gook Park, and In Man Kang |
Compact modeling of silicon nanowire MOSFET for radio frequency application |
Microwave and Optical Technology Letters |
53 |
2 |
471-473 |
Feb. 2011 |
| 36 |
Wandong Kim, Jung Hoon Lee, Jang-Gn Yun, Seongjae Cho, Dong Hua Li, Yoon Kim, Doo-Hyun Kim, Gil Sung Lee, Se Hwan Park, Won Bo Shim, Jung-Ho Lee, Hyungcheol Shin, and Byung-Gook Park |
Arch NAND Flash Memory Array with Improved Virtual Source/Drain Performance |
IEEE Electron Device Letters |
31 |
12 |
1374-1376 |
Dec. 2010 |
| 35 |
Seongjae Cho, Shinichi O'uchi, Kazuhiko Endo, Sang Wan Kim, Younghwan Son, In Man Kang, Meishoku Masahara, James S. Harris, Jr., and Byung-Gook Park |
Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters |
Journal of Semiconductor Technology and Science |
10 |
4 |
265-275 |
Dec. 2010 |
| 34 |
Jung Hoon Lee, Gil Sung Lee, Seongjae Cho, Jang-Gn Yun, and Byung-Gook Park |
Investigation of Field Concentration Effects in Arch Gate Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory |
Japanese Journal of Applied Physics |
49 |
11 |
1142021-1142026 |
Nov. 2010 |
| 33 |
Seongjae Cho, Kyung Rok Kim, Byung-Gook Park, and In Man Kang |
Non-Quasi-Static Modeling of Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor and Its Model Verification up to 1 THz |
Japanese Journal of Applied Physics |
49 |
11 |
1102061-1102063 |
Nov. 2010 |
| 32 |
Seongjae Cho, Kyung Rok Kim, Byung-Gook Park, and In Man Kang |
Optimum Design of Junctionless MOSFET Based on Silicon Nanowire Structure and Analysis on Basic RF Characteristics |
Journal of Institute of Electronics Engineers of Korea: Semiconductor Devices |
47 |
10 |
14-22 |
Oct. 2010 |
| 31 |
Seongjae Cho, In Man Kang, and Kyung Rok Kim |
Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs |
IEICE Electronics Express |
7 |
19 |
1499-1503 |
Oct. 2010 |
| 30 |
Seongjae Cho, Jung Hoon Lee, Shinichi O'uchi, Kazuhiko Endo, Meishoku Masahara, and Byung-Gook Park |
Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL) |
Solid-State Electronics |
54 |
10 |
1060-1065 |
Oct. 2010 |
| 29 |
Doo-Hyun Kim, Seongjae Cho, Dong Hua Li, Jang-Gn Yun, Jung Hoon Lee, Gil Sung Lee, Yoon Kim, Won Bo Shim, Se Hwan Park, Wandong Kim, Hyungcheol Shin, and Byung-Gook Park |
Program/Erase Model of Nitride-Based NAND-Type Charge Trap Flash Memories |
Japanese Journal of Applied Physics |
49 |
8 |
843011-843014 |
Aug. 2010 |
| 28 |
Seongjae Cho, Jung-Dal Choi, Byung-Gook Park, and Il Hwan Cho |
Effects of channel doping concentration and fin dimension variation on self-boosting of channel potential in NAND-type SONOS flash memory array based on bulk-FinFETs |
Current Applied Physics |
10 |
4 |
1096-1102 |
Jul. 2010 |
| 27 |
Seongjae Cho, Jung Hoon Lee, Yoon Kim, Jang Gn Yun, Hyungcheol Shin, and Byung-Gook Park |
Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices |
IEICE Transactions on Electronics |
E93-C |
5 |
596-601 |
May 2010 |
Gachon University