91 |
Dong Hua Li, Wandong Kim, Won Bo Shim, Se Hwan Park, Yoon Kim, Gil Sung Lee, Doo-Hyun Kim, Jung Hoon Lee, Jang-Gn Yun, Seongjae Cho, Il Han Park, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park |
Effects of Gate/Blocking Oxide Energy Barrier on Memory Characteristics in Charge Trap Flash Memory Cells |
Nanoscience and Nanotechnology Letters |
7 |
7 |
594-598 |
Jul. 2015 |
90 |
Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park |
Resistive Swiching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals |
IEICE Transactions on Electronics |
E98-C |
5 |
429-433 |
May 2015 |
89 |
Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park |
Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications |
Applied Physics Letters |
106 |
21 |
212106-1-212106-4 |
May 2015 |
88 |
Hana Sim, Jeongmin Lee, Seongjae Cho, Eou-Sik Cho, and Sang Jik Kwon |
A Study on Band Structure of ZnO/CdS Heterojunction for CIGS Solar-Cell Applications |
Journal of Semiconductor Technology and Science |
15 |
2 |
267-275 |
Apr. 2015 |
87 |
Jin Su Kim, Young Jun Yoon, Jae Hwa Seo, Young In Jang, Jung-Hee Lee, Seongjae Cho, Gwan Min Yoo, and In Man Kang |
High-performance Ge/GaAs heterojunction tunneling FET with a channel engineering for sub-0.5 V operation |
Semiconductor Science and Technology |
30 |
3 |
035020-1-035020-8 |
Mar. 2015 |
86 |
Jae Hwa Seo, Young Jun Yoon, Seongmin Lee, Jung-Hee Lee, Seongjae Cho, and In Man Kang |
Design and analysis of Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) |
Current Applied Physics |
15 |
3 |
208-212 |
Mar. 2015 |
85 |
Young Jae Kim, Young Jun Yoon, Jae Hwa Seo, Sung Min Lee, Seongjae Cho, Jung-Hee Lee, and In Man Kang |
Effect of Ga fraction in InGaAs channel on performances of gate-all-around tunneling field-effect transistor |
Semiconductor Science and Technology |
30 |
1 |
015006-1-015006-6 |
Jan. 2015 |
84 |
Jeongmin Lee, Jae-Hee Han, Jung-Hun Lee, Ji-Beom Yoo, Seongjae Cho, Sang Jik Kwon, and Eou Sik Cho |
Ablation of Graphene Film by Direct Nd:YVO4 Laser under Various Beaming Conditions |
Journal of Nanoscience and Nanotechnology |
14 |
12 |
9060-9064 |
Dec. 2014 |
83 |
Hwan Gi Lee, Jae Hwa Seo, Young Jun Yoon, Young Jae Kim, Jungjoon Kim, Seongjae Cho, Eou-Sik Cho, Jin-Hyuk Bae, Jung-Hee Lee, and In Man Kang |
Fabrication and Characterization of GaN-based Light-Emitting Diode (LED) with Triangle-type Structure |
Molecular Crystals and Liquid Crystals |
599 |
1 |
163-169 |
Nov. 2014 |
82 |
Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee, Gwan Min Yoo, Eou-Sik Cho, Seongjae Cho, Jung-Hee Lee, and In Man Kang |
A Reliable Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) Based on Radio-Frequency Analysis |
Journal of Nanoscience and Nanotechnology |
14 |
11 |
8219-8224 |
Nov. 2014 |
81 |
Young Jun Yoon, Jaw Hwa Seo, Eou-Sik Cho, Jung-Hee Lee, Jin-Hyuk Bae, Seongjae Cho, and In Man Kang |
Heteromaterial Gate Tunneling Field-Effect Transistor for High-Speed and Radio-Frequency Applications |
Journal of Nanoscience and Nanotechnology |
14 |
11 |
8136-8140 |
Nov. 2014 |
80 |
Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee, Gwan Min Yoo, Young-Woo Jo, Dong-Hyeok Son, Jung-Hee Lee, Eou-Sik Cho, Seongjae Cho, and In Man Kang |
Design and Analysis of Vertical-Channel Gallium Nitride (GaN) Junctionless Nanowire Transistor (JNT) |
Journal of Nanoscience and Nanotechnology |
14 |
11 |
8130-8135 |
Nov. 2014 |
79 |
Young Jun Yoon, Hee-Sung Kang, Jae Hwa Seo, Young-Jo Kim, Eou-Sik Cho, Jin-Hyuk Bae, Jung-Hee Lee, Seongjae Cho, and In Man Kang |
Design of a Recessed-gate GaN-based MOSFET Using a Dual Gate Dielectric for High-power Applications |
Journal of the Korean Physical Society |
65 |
10 |
1579-1584 |
Nov. 2014 |
78 |
Hee Bum Roh, Jae Hwa Seo, Young Jun Yoon, Jin-Hyuk Bae, Eou-Sik Cho, Jung-Hee Lee, Seongjae Cho, and In Man Kang |
Evaluation of Radio-Frequency Performance of Gate-All-Around Ge/GaAs Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation |
Journal of Electrical Engineering and Technology |
9 |
6 |
2070-2078 |
Nov. 2014 |
77 |
Sung Yoon Kim, Jae Hwa Seo, Young Jun Yoon, Gwan Min Yoo, Young Jae Kim, Hye Rim Eun, Hye Su Kang, Jungjoon Kim, Seongjae Cho, Jung-Hee Lee, and In Man Kang |
Design and Analysis of Sub-10-nm Junctionless Fin-Shaped Field-Effect Transistors |
Journal of Semiconductor Technology and Science |
14 |
5 |
508-517 |
Oct. 2014 |
76 |
Ki-Sik Im, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Jin Su Kim, Seongjae Cho, Jae-Hoon Lee, Sorin Cristoloveanu, Jung-Hee Lee, and In Man Kang |
GaN junctionless trigate field-effect transistor with deep-submicron gate length: Characterization and modeling in RF regime |
Japanese Journal of Applied Physics |
53 |
11 |
118001-1-118001-3 |
Oct. 2014 |
75 |
Xiaochi Chen, Yijie Huo, Seongjae Cho, Byung-Gook Park, and James S. Harris, Jr. |
Surface Treatment of Ge Grown Epitaxially on Si by Ex-Situ Annealing for Optical Computing by Ge Technology |
IEIE Transactions on Smart Processing and Computing |
3 |
5 |
331-337 |
Oct. 2014 |
74 |
Jeong Min Lee, Jung-Hun Lee, Jae-Hee Han, Ji-Beom Yoo, Jong-Ho Lee, Seongjae Cho, Sang Jik Kwon, and Eou Sik Cho |
Nd:YVO4 laser ablation of graphene films on glass and poly(ethylene terephthalate) substrates |
Japanese Journal of Applied Physics |
53 |
8S3 |
08NL02-1-08NL02-5 |
Aug. 2014 |
73 |
Seung Wook Ryu, Seongjae Cho, Joonsuk Park, Jungsuk Kwac, Hyeong Joon Kim, and Yoshio Nishi |
Effects of ZrO2 doping on HfO2 resistive switching memory characteristics |
Applied Physics Letters |
105 |
7 |
072102-1-072102-4 |
Aug. 2014 |
72 |
Sung Yun Woo, Young Jun Yoon, Jae Hwa Seo, Gwan Min Yoo, Seongjae Cho, and In Man Kang |
InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate |
IEICE Transactions on Electron Devices |
E97-C |
7 |
677-682 |
Jul. 2014 |