| 169 |
Seunghyun Kim, Min-Hwi Kim, Sang-Ho Lee, Youngmin Kim, Hyung-Min Kim, Young Goan Kim, Seongjae Cho, and Byung-Gook Park |
Highly accurate circuit-level macro modeling of charge-trap flash memory |
The 23rd Korean Conference on Semiconductors (KCS) |
83 |
Jeongsun, Korea |
Feb. 22-24, 2016 |
| 168 |
Min-Hwi Kim, Sungjun Kim, Sunghun Jung, Seongjae Cho, and Byung-Gook Park |
Circuit-level simulation of RRAM cross-point array based on a reliable device-level compact modeling |
The 23rd Korean Conference on Semiconductors (KCS) |
50 |
Jeongsun, Korea |
Feb. 22-24, 2016 |
| 167 |
Youngmin Kim and Seongjae Cho |
Si CMOS extension and Ge technology perspectives forecase through metal-oxide-semiconductor junctionless field-effect transistor |
The 23rd Korean Conference on Semiconductors (KCS) |
49 |
Jeongsun, Korea |
Feb. 22-24, 2016 |
| 166 |
Junsoo Lee, Youngmin Kim, and Seongjae Cho |
Optimal design of 10-nm junctionless field-effect transistor with poly-Si channel in consideration of quantum-mechanical drift-diffusion models |
The 23rd Korean Conference on Semiconductors (KCS) |
19 |
Jeongsun, Korea |
Feb. 22-24, 2016 |
| 165 |
Eunseon Yu, Mina Yun, and Seongjae Cho |
Nanowire PMOSFET having Si core and ultra-thin Ge peripheral channel |
The 23rd Korean Conference on Semiconductors (KCS) |
20 |
Jeongsun, Korea |
Feb. 22-24, 2016 |
| 164 |
Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Min Ju Kim, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park |
Comparison of forming voltage in oxide-based resistive switching memories |
International Conference on Electronics, Information, and Communication (ICEIC) 2016 |
747-748 |
Danang, Vietnam |
Jan. 27-30, 2016 |
| 163 |
Sungjun Kim, Su Hyun Bang, Tae-Hyeon Kim, Min Ju Yun, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park |
Conduction Mechanism in Resistive Switching Memory Cells Using HfO2 film |
The 9th International Conference on Advanced Materials and Devices (ICAMD) |
Po-Na15-051 |
Jeju, Korea |
Dec. 7-9, 2015 |
| 162 |
Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Min Ju Yun, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park |
Investigation on Reliability of Ni/Si3N4/SiO2/Si RRAM Device |
The 9th International Conference on Advanced Materials and Devices (ICAMD) |
Po-Na15-015 |
Jeju, Korea |
Dec. 7-9, 2015 |
| 161 |
Mina Yun and Seongjae Cho |
Process Modeling and Device Application of Germanium Condensation |
2015 IEIE Fall Conference |
89-92 |
Wonju, Korea |
Nov. 27-28, 2015 |
| 160 |
Sungjun Kim, Sunghun Jung, Hyungjin Kim, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Min Ju Yun, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park |
SiO2-Based Resistive-Switching Random-Access Memory |
2015 IEIE Fall Conference |
86-88 |
Wonju, Korea |
Nov. 27-28, 2015 |
| 159 |
Jun-Soo Lee, Youngmin Kim, and Seongjae Cho |
Design of 10-nm-Level Junctionless Field-Effect Transistor with Poly-Si Channel under Quantum Mechanical Effects in Drift and Diffusion |
2015 IEIE Fall Conference |
37-40 |
Wonju, Korea |
Nov. 27-28, 2015 |
| 158 |
Sungjoon Kim, Sungjun Kim, Seongjae Cho, Garam Kim, and Byung-Gook Park |
Optimization of current injection for high-power light-emitting diode (LED) by novel contact structuring |
International Microprocesses and Nanotechnology Conference (MNC) 2015 |
13P-11-27 |
Toyama, Japan |
Nov. 10-13, 2015 |
| 157 |
Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park |
Nitride-Based RRAM Devices for Various Applications |
The 30th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) |
240-241 |
Seoul, Korea |
Jun. 29 - Jul. 2, 2015 |
| 156 |
Kyung-Chang Ryoo, Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park |
Structural Effects on Unipolar Resistive Switching Behaviors in Oxide-Based RRAM for High-Density and Low-Power Applications |
The 30th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) |
235-236 |
Seoul, Korea |
Jun. 29 - Jul. 2, 2015 |
| 155 |
Mina Yun, Seongjae Cho, Saekyoung Kang, Sunghun Jung, and Byung-Gook Park |
Ge-on-Si Photodetector with Novel Metallization Schemes for On-Chip Optical Interconnect |
2015 The 19th IEEE International Symposium on Consumer Electronics (ISCE) |
1-2 |
Madrid, Spain |
Jun. 24-26, 2015 |
| 154 |
Youngmin Kim, Junsoo Lee, Yongbeom Cho, and Seongjae Cho |
A junctionless field-effect transistor with an ultra-thin poly-Si channel for sub-10-nm technology node |
2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
366-369 |
Jeju, Korea |
Jun. 29 - Jul. 1, 2015 |
| 153 |
Jeongmin Lee and Seongjae Cho |
Characterization of Ge thin film deposited directly on Si by low-thermal-budget processing |
2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
189-192 |
Jeju, Korea |
Jun. 29 - Jul. 1, 2015 |
| 152 |
Young Jun Yoon, Jae Hwa Seo, Jin Su Kim, Young Jae Kim, Sung Yoon Kim, Hye Rim Eun, Hye Su Kang, Young In Jang, Ra Hee Kwon, Seongjae Cho, Hyuck-In Kwon, Jung-Hee Lee, and In Man Kang |
Sub-10 nm Ge/GaAs Heterojunction-based Tunneling Field-Effect Transistor with Vertical Tunneling Operation |
2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
112-115 |
Jeju, Korea |
Jun. 29 - Jul. 1, 2015 |
| 151 |
Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park |
Effects of bottom electrode on Ag-based electrochemical metallization memory devices |
2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
80-82 |
Jeju, Korea |
Jun. 29 - Jul. 1, 2015 |
| 150 |
Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park |
Bias polarity dependent resistive switching behavior in silicon nitride-based memory cells |
2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
73-75 |
Jeju, Korea |
Jun. 29 - Jul. 1, 2015 |
Gachon University