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Authors Title Journal Vol. No. Page Date
51 Seongjae Cho and In Man Kang Design optimization of tunneling field-effect transistor based on silicon nanowire PNPN structure and its radio frequency characteristics Current Applied Physics 12 3 673-677 May 2012
50 Seongjae Cho, Hyungjin Kim, Min-Chul Sun, In Man Kang, Byung-Gook Park, and James S. Harris, Jr. Simulation Study on Scaling Limit of Silicon Tunneling Field-Effect Transistor under Tunneling Predominance IEICE Electronics Express 9 9 833-838 May 2012
49 Won Bo Shim, Seongjae Cho, Jung Hoon Lee, Dong Hua Li, Doo-Hyun Kim, Gil Sung Lee, Yoon Kim, Se Hwan Park, Wandong Kim, Jungdal Choi, and Byung-Gook Park Stacked Gated Twin-Bit (SGTB) SONOS Memory Device for High-Density Flash Memory IEEE Transactions on Nanotechnology 11 2 307-313 Mar. 2012
48 Seongjae Cho, In Man Kang, Theodore I. Kamins, Byung-Gook Park, and James S. Harris, Jr. Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation Applied Physics Letters 99 24 243505-1-243505-4 Dec. 2011
47 Seongjae Cho, Jan Sung Lee, Kyung Rok Kim, Byung-Gook Park, James S. Harris, Jr., and In Man Kang Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors IEEE Transactions on Electron Devices 58 12 4164-4171 Dec. 2011
46 Jang-Gn Yun, Seongjae Cho, and Byung-Gook Park Stacked-nanowire device with virtual source/drain (SD-VSD) for 3D NAND flash memory application Solid-State Electronics 64 1 41-46 Oct. 2011
45 Myounggon Kang, Wookghee Hahn, Il Han Park, Juyoung Park, Youngsun Song, Hocheol Lee, Changgyu Eun, Sanghyun Ju, Kihwan Choi, Youngho Lim, Seunghyun Jang, Seongjae Cho, Byung-Gook Park, and Hyungcheol Shin DIBL-Induced Program Disturb Characteristics in 32-nm NAND Flash Memory Array IEEE Transactions on Electron Devices 58 10 3626-3629 Oct. 2011
44 Seongjae Cho, Robert Chen, Sukmo Koo, Gary Shambat, Hai Lin, Namkyoo Park, Jelena Vučković, Theodore I. Kamins, Byung-Gook Park, and James S. Harris, Jr. Fabrication and Analysis of Epitaxially Grown Ge1-xSnx Microdisk Resonator with 20-nm Free Spectral Range IEEE Photonics Technology Letters 23 20 1535-1537 Oct. 2011
43 Seongjae Cho, Min-Chul Sun, Garam Kim, Theoroe I. Kamins, Byung-Gook Park, and James S. Harris, Jr. Design Optimization of a Type-I Heterojunction Tunneling Field-Effect Transistor (I-HTFET) for High Performance Logic Technology Journal of Semiconductor Technology and Science 11 3 182-189 Sep. 2011
42 Seongjae Cho and Byung-Gook Park A Novel Sensing Scheme for Reliable Read Operation of Ultrathin-Body Vertical NAND Flash Memory Devices IEEE Transactions on Electron Devices 58 8 2814-2817 Aug. 2011
41 Gil Sung Lee, Doo-Hyun Kim, Seongjae Cho, and Byung-Gook Park A new 1T DRAM cell: cone type 1T DRAM cell IEICE Transactions on Electronics E94-C 5 681-685 May 2011
40 Seongjae Cho, Jung Hoon Lee, Sunghun Jung, Se Hwan Park, and Byung-Gook Park Fabrication and Operation Methods of a One-time Programmable (OTP) Nonvolatile Memory (NVM) Based on a Metal-oxide-semiconductor Structure Journal of the Korean Physical Society 58 5 1488-1493 May 2011
39 Seongjae Cho, Kyung Rok Kim, Byung-Gook Park, and In Man Kang RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs IEEE Transactions on Electron Devices 58 5 1388-1396 May 2011
38 Seongjae Cho, Won Bo Shim, Yoon Kim, Jang-Gn Yun, Jong Duk Lee, Hyungcheol Shin, Jong-Ho Lee, and Byung-Gook Park Charge-Trap Folded NAND Flash Memory Device with Band-gap-Engineered Storage Node IEEE Transactions on Electron Devices 58 2 288-295 Feb. 2011
37 Seongjae Cho, Kyung Rok Kim, Byung-Gook Park, and In Man Kang Compact modeling of silicon nanowire MOSFET for radio frequency application Microwave and Optical Technology Letters 53 2 471-473 Feb. 2011
36 Wandong Kim, Jung Hoon Lee, Jang-Gn Yun, Seongjae Cho, Dong Hua Li, Yoon Kim, Doo-Hyun Kim, Gil Sung Lee, Se Hwan Park, Won Bo Shim, Jung-Ho Lee, Hyungcheol Shin, and Byung-Gook Park Arch NAND Flash Memory Array with Improved Virtual Source/Drain Performance IEEE Electron Device Letters 31 12 1374-1376 Dec. 2010
35 Seongjae Cho, Shinichi O'uchi, Kazuhiko Endo, Sang Wan Kim, Younghwan Son, In Man Kang, Meishoku Masahara, James S. Harris, Jr., and Byung-Gook Park Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters Journal of Semiconductor Technology and Science 10 4 265-275 Dec. 2010
34 Jung Hoon Lee, Gil Sung Lee, Seongjae Cho, Jang-Gn Yun, and Byung-Gook Park Investigation of Field Concentration Effects in Arch Gate Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Japanese Journal of Applied Physics 49 11 1142021-1142026 Nov. 2010
33 Seongjae Cho, Kyung Rok Kim, Byung-Gook Park, and In Man Kang Non-Quasi-Static Modeling of Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor and Its Model Verification up to 1 THz Japanese Journal of Applied Physics 49 11 1102061-1102063 Nov. 2010
32 Seongjae Cho, Kyung Rok Kim, Byung-Gook Park, and In Man Kang Optimum Design of Junctionless MOSFET Based on Silicon Nanowire Structure and Analysis on Basic RF Characteristics Journal of Institute of Electronics Engineers of Korea: Semiconductor Devices 47 10 14-22 Oct. 2010
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